SILICON SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    SILICON SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
    硅太阳能电池及其制造方法

    公开(公告)号:US20160308083A1

    公开(公告)日:2016-10-20

    申请号:US15189384

    申请日:2016-06-22

    Abstract: A silicon solar cell and a method of manufacturing the same are disclosed. The silicon solar cell includes a silicon semiconductor substrate doped with first conductive impurities, an emitter layer doped with second conductive impurities having polarities opposite polarities of the first conductive impurities on the substrate, an anti-reflective layer on an entire surface of the substrate, an upper electrode that passes through the anti-reflective layer and is connected to the emitter layer, and a lower electrode connected to a lower portion of the substrate. The emitter layer includes a first emitter layer heavily doped with the second conductive impurities and a second emitter layer lightly doped with the second conductive impurities. A surface resistance of the second emitter layer is 100 Ohm/sq to 120 Ohm/sq.

    Abstract translation: 公开了一种硅太阳能电池及其制造方法。 硅太阳能电池包括掺杂有第一导电杂质的硅半导体衬底,掺杂有具有与衬底上的第一导电杂质的极性相反的极性的第二导电杂质的发射极层,在衬底的整个表面上的抗反射层, 上电极穿过抗反射层并连接到发射极层,下电极连接到衬底的下部。 发射极层包括重掺杂有第二导电杂质的第一发射极层和轻掺杂有第二导电杂质的第二发射极层。 第二发射极层的表面电阻为100欧姆/平方至120欧姆/平方。

    Solar cell
    2.
    发明授权

    公开(公告)号:US10340412B2

    公开(公告)日:2019-07-02

    申请号:US15601370

    申请日:2017-05-22

    Abstract: A solar cell includes a photoelectric conversion layer; and a front electrode on the photoelectric conversion layer, wherein the front electrode includes a plurality of first finger electrodes; a plurality of second finger electrodes; a bus electrode directly connected to at least one of the plurality of first finger electrodes; a plurality of connecting electrodes connected to the plurality of second finger electrodes, the plurality of connecting electrodes forming at least one space therebetween; and an auxiliary electrode formed at the at least one space, wherein the auxiliary electrode connects at least two connecting electrodes of the plurality of connecting electrodes.

    Solar cell, solar cell manufacturing device, and method for manufacturing the same
    3.
    发明授权
    Solar cell, solar cell manufacturing device, and method for manufacturing the same 有权
    太阳能电池,太阳能电池制造装置及其制造方法

    公开(公告)号:US08680490B2

    公开(公告)日:2014-03-25

    申请号:US13626707

    申请日:2012-09-25

    Abstract: A solar cell, a solar cell manufacturing device, and a method for manufacturing the solar cell are discussed. The solar cell manufacturing device includes a chamber; an ion implantation unit configured to implant ions into a substrate inside the chamber and a mask positioned between the ion implantation unit and the substrate. The mask includes a first opening to form a lightly doped region having a first concentration at one surface of the substrate, a second opening to form a heavily doped region having a second concentration higher than the first concentration at the one surface of the substrate, and at least one connector formed to cross the second opening. The second opening includes finger openings formed in a first direction, and bus openings formed in a second direction crossing the first direction.

    Abstract translation: 讨论太阳能电池,太阳能电池制造装置和太阳能电池的制造方法。 太阳能电池制造装置包括:室; 离子注入单元,被配置为将离子注入到腔室内的衬底中,以及掩模,其位于离子注入单元和衬底之间。 掩模包括第一开口以形成在衬底的一个表面处具有第一浓度的轻掺杂区域,第二开口以形成在衬底的一个表面处具有高于第一浓度的第二浓度的重掺杂区域,以及 形成为穿过第二开口的至少一个连接器。 第二开口包括沿第一方向形成的指形开口和沿与第一方向交叉的第二方向形成的总线开口。

    Method for manufacturing solar cell

    公开(公告)号:US09698300B2

    公开(公告)日:2017-07-04

    申请号:US14733620

    申请日:2015-06-08

    Abstract: A method of manufacturing a solar cell is discussed. The method of manufacturing the solar cell includes: forming a conductive region on a semiconductor substrate; forming an electrode connected to the conductive region; and post-processing the semiconductor substrate to passivate the semiconductor substrate. The post-processing of the semiconductor substrate comprises a main processing process for heat-treating the semiconductor substrate while providing light to the semiconductor substrate. A temperature of the main processing process is about 100° C. to about 800° C., and the temperature and light intensity of the main processing process satisfy Equation of 1750−31.8·T+(0.16)·T2≦I. Here, T is the temperate (° C.) of the main processing process, and I is the light intensity (mW/cm2) of the main processing process.

    Solar cell
    5.
    发明授权

    公开(公告)号:US09660129B2

    公开(公告)日:2017-05-23

    申请号:US14810169

    申请日:2015-07-27

    CPC classification number: H01L31/1804 H01L31/022433 Y02E10/547 Y02P70/521

    Abstract: A solar cell is discussed, which includes a pair of connecting electrodes having a portion having a width smaller than a width of a plurality of bus bar electrodes, and the pair of connecting electrodes connects a plurality of second finger electrodes to both sides of an end of one of the plurality of bus bar electrodes, respectively, wherein the end of the one of the plurality of bus bar electrodes being positioned in a second direction, wherein an area not including the plurality of second finger electrodes is positioned between the pair of connecting electrodes, and wherein an auxiliary electrode not connected to the plurality of second finger electrodes and having a width smaller than the width of the plurality of bus bar electrodes is disposed in the area not including the plurality of second finger electrodes.

    Post-processing apparatus of solar cell

    公开(公告)号:US10109511B2

    公开(公告)日:2018-10-23

    申请号:US14741286

    申请日:2015-06-16

    Abstract: A post-processing apparatus of a solar cell carries out a post-processing operation including a main period for heat-treating a solar cell including a semiconductor substrate while providing light to the solar cell. The post-processing apparatus includes a main section to carry out the main period. The main section includes a first heat source unit to provide heat to the semiconductor substrate and a light source unit to provide light to the semiconductor substrate. The first heat source unit and the light source unit are positioned in the main section. The light source unit includes a light source constituted by a plasma lighting system (PLS).

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