公开(公告)号：US08759140B2

公开(公告)日：2014-06-24

申请号：US13728604

申请日：2012-12-27

Applicant: LG Electronics Inc.

Inventor： Seongeun Lee

IPC: H01L31/18

CPC classification number: H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/1876 ,  Y02E10/50 ,  Y02P70/521

Abstract: The present invention relates to a solar cell. The solar cell includes a substrate of a first conductive type, an emitter layer of a second conductive type opposite the first conductive type on the substrate, first and second anti-reflection layers that are sequentially positioned on the emitter layer, a first electrode electrically connected to the emitter layer, first to third passivation layers that are sequentially positioned on the substrate, each of the first to third passivation layers including a plurality of exposed portions, and a plurality of second electrodes electrically connected to portions of the substrate exposed by the plurality of exposed portions.

Abstract translation: 本发明涉及一种太阳能电池。 该太阳能电池包括第一导电类型的衬底，与衬底上的第一导电类型相反的第二导电类型的发射极层，顺序地位于发射极层上的第一和第二抗反射层，电连接的第一电极 到发射极层，顺序地定位在衬底上的第一至第三钝化层，第一至第三钝化层中的每一个包括多个暴露部分，以及多个第二电极，电连接到由多个裸露的多个衬底暴露的衬底的部分 的暴露部分。

公开(公告)号：US10903375B2

公开(公告)日：2021-01-26

申请号：US16290233

申请日：2019-03-01

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa Cheong ,  Yiyin Yu ,  Youngsung Yang ,  Yongduk Jin ,  Manhyo Ha ,  Seongeun Lee

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/02

Abstract: A solar cell can include a front passivation region including a plurality of layers formed of different materials from each other and including a first aluminum oxide layer and a first silicon nitride layer, and a back passivation region including a plurality of layers formed of different materials from each other and including a second aluminum oxide layer and a second silicon nitride layer, wherein a thickness of a first silicon nitride layer is greater than a thickness of the first aluminum oxide layer, and a thickness of a second silicon nitride layer is greater than a thickness of the second aluminum oxide layer.

公开(公告)号：US09660129B2

公开(公告)日：2017-05-23

申请号：US14810169

申请日：2015-07-27

Applicant: LG Electronics Inc.

Inventor： Sungjin Kim ,  Taeyoung Kwon ,  Seongeun Lee ,  Gyeayoung Kwag

IPC: H01L31/042 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/1804 ,  H01L31/022433 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell is discussed, which includes a pair of connecting electrodes having a portion having a width smaller than a width of a plurality of bus bar electrodes, and the pair of connecting electrodes connects a plurality of second finger electrodes to both sides of an end of one of the plurality of bus bar electrodes, respectively, wherein the end of the one of the plurality of bus bar electrodes being positioned in a second direction, wherein an area not including the plurality of second finger electrodes is positioned between the pair of connecting electrodes, and wherein an auxiliary electrode not connected to the plurality of second finger electrodes and having a width smaller than the width of the plurality of bus bar electrodes is disposed in the area not including the plurality of second finger electrodes.

公开(公告)号：US09343599B2

公开(公告)日：2016-05-17

申请号：US14146501

申请日：2014-01-02

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa Cheong ,  Hyunjung Park ,  Junyong Ahn ,  Seongeun Lee ,  Jiweon Jeong

IPC: H01L31/00 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/02363 ,  H01L31/02168 ,  H01L31/18 ,  Y02E10/50 ,  Y02E10/52

Abstract: A method of manufacturing a solar cell includes forming jagged portions non-uniformly on a surface of a substrate, forming a first type semiconductor and a second type semiconductor in the substrate, forming a first electrode to contact the first type semiconductor, and forming a second electrode to contact the second type semiconductor. An etchant used in a wet etching process in manufacturing the solar cell includes about 0.5 wt % to 10 wt % of HF, about 30 wt % to 60 wt % of HNO3, and up to about 30 wt % of acetic acid based on total weight of the etchant.

Abstract translation: 太阳能电池的制造方法包括在基板的表面上不均匀地形成锯齿状的部分，在基板上形成第一型半导体和第二型半导体，形成与第一型半导体接触的第一电极，形成第二 电极接触第二类型半导体。 在制造太阳能电池的湿式蚀刻工艺中使用的蚀刻剂包括约0.5重量％至10重量％的HF，约30重量％至60重量％的HNO 3和至多约30重量％的基于总重量的乙酸 的蚀刻剂。

公开(公告)号：US08889464B2

公开(公告)日：2014-11-18

申请号：US13890931

申请日：2013-05-09

Applicant: LG Electronics Inc.

Inventor： Mann Yi ,  Jeonghyo Kwon ,  Seongeun Lee ,  Taeyoung Kwon

IPC: H01L21/00 ,  H01L31/0232 ,  H01L31/0236 ,  H01L21/02 ,  H01L31/0216 ,  H01L31/068

CPC classification number: H01L31/0236 ,  H01L21/02054 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/068 ,  Y02E10/52 ,  Y02E10/547

Abstract: A method for manufacturing a solar cell includes performing a dry etching process to form a textured surface including a plurality of minute protrusions on a first surface of a semiconductor substrate, performing a first cleansing process for removing damaged portions of surfaces of the minute protrusions using a basic chemical and removing impurities adsorbed on the surfaces of the minute protrusions, performing a second cleansing process for removing impurities remaining or again adsorbed on the surfaces of the minute protrusions using an acid chemical after performing the first cleansing process, and forming an emitter region at the first surface of the semiconductor substrate.

Abstract translation: 一种制造太阳能电池的方法包括：在半导体衬底的第一表面上进行干蚀刻工艺以形成包括多个微小突起的纹理化表面，使用第一清洁工艺去除微小突起的损伤部分， 基本化学和去除吸附在微小突起表面上的杂质，进行第二次清洁处理，以在第一次清洁处理之后，使用酸性化学品除去残留或再次吸附在微小突起的表面上的杂质，以及形成发射极区域 半导体衬底的第一表面。