Method for manufacturing solar cell including a patterned dopant layer

    公开(公告)号:US10134941B2

    公开(公告)日:2018-11-20

    申请号:US14997196

    申请日:2016-01-15

    Abstract: A method for manufacturing a solar cell is disclosed. The disclosed method includes conductive region formation of forming a first-conduction-type region at one surface of a semiconductor substrate and a second-conduction-type region at another surface of the semiconductor substrate, and electrode formation of forming a first electrode connected to the first-conduction-type region and a second electrode connected to the second-conduction-type region. In the conductive region formation, the first-conduction-type region is formed by forming a dopant layer containing a first-conduction-type dopant over the one surface of the semiconductor substrate, and heat-treating the dopant layer, and the second-conduction-type region is formed by ion-implanting a second-conduction-type dopant into the semiconductor substrate at the another surface of the semiconductor substrate.

    Method for manufacturing solar cell
    2.
    发明授权
    Method for manufacturing solar cell 有权
    制造太阳能电池的方法

    公开(公告)号:US08889464B2

    公开(公告)日:2014-11-18

    申请号:US13890931

    申请日:2013-05-09

    Abstract: A method for manufacturing a solar cell includes performing a dry etching process to form a textured surface including a plurality of minute protrusions on a first surface of a semiconductor substrate, performing a first cleansing process for removing damaged portions of surfaces of the minute protrusions using a basic chemical and removing impurities adsorbed on the surfaces of the minute protrusions, performing a second cleansing process for removing impurities remaining or again adsorbed on the surfaces of the minute protrusions using an acid chemical after performing the first cleansing process, and forming an emitter region at the first surface of the semiconductor substrate.

    Abstract translation: 一种制造太阳能电池的方法包括:在半导体衬底的第一表面上进行干蚀刻工艺以形成包括多个微小突起的纹理化表面,使用第一清洁工艺去除微小突起的损伤部分, 基本化学和去除吸附在微小突起表面上的杂质,进行第二次清洁处理,以在第一次清洁处理之后,使用酸性化学品除去残留或再次吸附在微小突起的表面上的杂质,以及形成发射极区域 半导体衬底的第一表面。

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