公开(公告)号：US20220139489A1

公开(公告)日：2022-05-05

申请号：US17089394

申请日：2020-11-04

Applicant: Micron Technology, Inc.

Inventor： James S. Rehmeyer ,  Yoshinori Fujiwara

IPC: G11C29/44 ,  G11C11/408

Abstract: A memory device includes a memory bank that includes a first set of memory rows in a first section of the memory bank, a first set of redundant rows in a first section of the memory bank, a second set of memory rows in a second section of the memory bank, and a second set of redundant rows in the second section of the memory bank. The memory bank also includes a repeater blocker circuit that when in operation selectively blocks a signal from transmission to the second section of the memory bank and blocker control circuitry that when in operation transmits a control signal to control the selective blocking of the signal by the repeater blocker circuit.

公开(公告)号：US20220101913A1

公开(公告)日：2022-03-31

申请号：US17545966

申请日：2021-12-08

Applicant: Micron Technology, Inc.

Inventor： James S. Rehmeyer ,  Jason M. Johnson ,  Joo-Sang Lee

IPC: G11C11/406 ,  G06F11/30

Abstract: Memory devices, systems, and associated methods with per die temperature-compensated refresh control, and associated methods, are disclosed herein. In one embodiment, a memory device includes a plurality of memory cells and a sensor configured to measure a temperature of the memory device. The memory device determines a frequency at which it is receiving refresh commands. The memory device is further configured to skip refresh operations of the memory cells based, at least in part, on the determination and on the temperature of the memory device.

公开(公告)号：US11227649B2

公开(公告)日：2022-01-18

申请号：US16375716

申请日：2019-04-04

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Nathaniel J. Meier ,  James S. Rehmeyer

IPC: G11C11/406 ,  G11C11/408

Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for staggering the timing of targeted refresh operations. A memory device may include a number of memory banks, at least some of which may be simultaneously entered into a refresh mode. A given memory bank may perform an auto-refresh operation or a targeted refresh operation, which may draw less power than the auto-refresh operation. The timing of the targeted refresh operations may be staggered between the refreshing memory banks, such that a portion of the refreshing memory banks are performing a targeted refresh operation simultaneously with a portion of the refreshing memory banks performing an auto-refresh operation.

公开(公告)号：US11217296B2

公开(公告)日：2022-01-04

申请号：US16833045

申请日：2020-03-27

Applicant: Micron Technology, Inc.

Inventor： Christopher G. Wieduwilt ,  James S. Rehmeyer

IPC: G11C7/00 ,  G11C11/406 ,  G11C11/408 ,  G06F7/501 ,  G11C5/14 ,  G11C11/409

Abstract: Methods, systems, and devices for staggered refresh counters for a memory device are described. The memory device may include a set of memory dies each coupled with a common command and address (CA) bus and each including a respective refresh counter. In response to a refresh command received over the CA bus, each memory die may refresh a set of memory cells based on a value output by the respective refresh counter for the memory die. The refresh counters for at least two of the memory dies of the memory device may be offset such that they indicate different values when a refresh command is received over the CA bus, and thus at least two of the memory dies may refresh memory cells in different sections of their respective arrays. Offsets between refresh counters may be based on different fuse settings associated with the different memory dies.

公开(公告)号：US20210304814A1

公开(公告)日：2021-09-30

申请号：US16833045

申请日：2020-03-27

Applicant: Micron Technology, Inc.

Inventor： Christopher G. Wieduwilt ,  James S. Rehmeyer

IPC: G11C11/406 ,  G11C11/408 ,  G11C11/409 ,  G11C5/14 ,  G06F7/501

Abstract: Methods, systems, and devices for staggered refresh counters for a memory device are described. The memory device may include a set of memory dies each coupled with a common command and address (CA) bus and each including a respective refresh counter. In response to a refresh command received over the CA bus, each memory die may refresh a set of memory cells based on a value output by the respective refresh counter for the memory die. The refresh counters for at least two of the memory dies of the memory device may be offset such that they indicate different values when a refresh command is received over the CA bus, and thus at least two of the memory dies may refresh memory cells in different sections of their respective arrays. Offsets between refresh counters may be based on different fuse settings associated with the different memory dies.

公开(公告)号：US20210295901A1

公开(公告)日：2021-09-23

申请号：US17338191

申请日：2021-06-03

Applicant: Micron Technology, Inc.

Inventor： Dale H. Hiscock ,  Debra M. Bell ,  Michael Kaminski ,  Joshua E. Alzheimer ,  Anthony D. Veches ,  James S. Rehmeyer

IPC: G11C11/406 ,  G11C29/00 ,  G11C11/409 ,  G11C11/4074

Abstract: Memory with partial bank refresh is disclosed herein. In one embodiment, a memory system includes a memory controller and a memory device operably connected to the memory controller. The memory device includes (i) a memory array having a memory bank with a plurality of memory cells arranged in a plurality of memory rows and (ii) circuitry. In some embodiments, the circuitry is configured to disable at least one memory row of the memory bank from receiving refresh commands such that memory cells of the at least one memory row are not refreshed during refresh operations of the memory device. In some embodiments, the memory controller is configured to track memory rows that include utilized memory cells and/or to write data to the memory rows in accordance with a programming sequence of the memory device.

公开(公告)号：US20210257043A1

公开(公告)日：2021-08-19

申请号：US17308448

申请日：2021-05-05

Applicant: Micron Technology, Inc.

Inventor： James S. Rehmeyer ,  Christopher G. Wieduwilt ,  George Raad ,  Seth Eichmeyer ,  Dean Gans

IPC: G11C29/00 ,  G11C17/16 ,  G11C29/02

Abstract: Methods, systems, and devices for adjustable column address scramble using fuses are described. A testing device may detect a first error in a first column plane of a memory array and a second error in a second column plane of the memory array. The testing device may identify a first column address of the first column plane associated with the first error and a second column address of the second column plane based on detecting the first error and the second error. The testing device may determine, for the first column plane, a configuration for scrambling column addresses of the first column plane to different column addresses of the first column plane. In some cases, the testing device may perform a fuse blow of a fuse associated with the first column plane to implement the determined configuration.

公开(公告)号：US11087829B2

公开(公告)日：2021-08-10

申请号：US16926476

申请日：2020-07-10

Applicant: Micron Technology, Inc.

Inventor： James S. Rehmeyer ,  George B. Raad ,  Debra M. Bell ,  Markus H. Geiger ,  Anthony D. Veches

IPC: G11C11/4094 ,  G11C11/408 ,  G11C11/4096 ,  G11C11/406

Abstract: Methods, systems, and devices for phase charge sharing are described. In some memory systems or memory devices, one or more decoders may be used to bias access lines of a memory die. The decoders may transfer voltage or current between a first conductive line of the decoder and a second conductive line of the decoder via a shorting device. Transferring the voltage or current may be performed as part of or in association with an operation (e.g., an activate or pre-charge operation) to access one or more memory cells of the memory die. In some examples, the decoders may transfer voltage or current between a first conductive line of a decoder associated with a first refresh activity and a second conductive line of the decoder associated with a second refresh activity via a shorting device.

公开(公告)号：US20210241810A1

公开(公告)日：2021-08-05

申请号：US17164738

申请日：2021-02-01

Applicant: Micron Technology, Inc.

Inventor： Timothy M. Hollis ,  James S. Rehmeyer ,  Baekkyu Choi ,  Yogesh Sharma ,  Eric J. Stave ,  Brian W. Huber ,  Miles S. Wiscombe

IPC: G11C11/406

Abstract: Methods, systems, and devices for voltage adjustment based on, for example, pending refresh operations are described. A memory device may periodically perform refresh operations to refresh volatile memory cells and may at times postpone performing one or more refresh operations. A memory device may determine a quantity of pending (e.g., postponed) refresh operations, such as by determining a quantity of refresh intervals that have elapsed without receiving or executing a refresh command, among other methods. A memory device may pre-emptively adjust (or cause to be adjusted) a supply voltage associated with the memory device or memory device component based on the quantity of pending refresh operations to prepare for the current demand associated with the performing the one or more pending refresh operations. For example, the memory device may increase a supply voltage associated with one or more components to prepare for performing multiple pending refresh operations.

公开(公告)号：US11062740B2

公开(公告)日：2021-07-13

申请号：US16834293

申请日：2020-03-30

Applicant: Micron Technology, Inc.

Inventor： Jonathan S. Parry ,  George B. Raad ,  James S. Rehmeyer ,  Timothy B. Cowles

IPC: G11C5/14 ,  G11C7/22

Abstract: A memory device is provided. The memory device comprises a memory array and circuitry configured to determine one or more settings for the memory array corresponding to a powered-on state of the memory device, to store the one or more settings in a non-volatile memory location, and in response to returning to the powered-on state from a reduced-power state, to read the one or more settings from the non-volatile memory location.