公开(公告)号：US10811098B2

公开(公告)日：2020-10-20

申请号：US16525804

申请日：2019-07-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Silvia Beltrami ,  Angelo Visconti

IPC: G11C16/10 ,  G11C16/12 ,  G11C16/34

Abstract: Methods of operating a memory device include programming a page of a memory block of the memory device using a particular starting programming voltage, determining a programming voltage indicative of a programming efficiency of the page of the memory block during programming of the page of the memory block, storing a representation of the programming voltage indicative of the programming efficiency of the page of the memory block, setting a starting programming voltage for a different page of the memory block in response to the stored representation of the programming voltage indicative of the programming efficiency of the page of the memory block, and programming the different page of the memory block using its starting programming voltage.

公开(公告)号：US10074432B2

公开(公告)日：2018-09-11

申请号：US14856105

申请日：2015-09-16

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Silvia Beltrami ,  Angelo Visconti

IPC: G11C16/10 ,  G11C16/12 ,  G11C16/34

CPC classification number: G11C16/10 ,  G11C16/12 ,  G11C16/3459 ,  G11C16/3463 ,  G11C16/3468 ,  G11C16/3486 ,  G11C16/3495

Abstract: Methods of operating a memory device include programming a page of a memory block of the memory device using a particular starting programming voltage, determining a programming voltage indicative of a programming efficiency of the page of the memory block during programming of the page of the memory block, storing a representation of the programming voltage indicative of the programming efficiency of the page of the memory block, setting a starting programming voltage for a different page of the memory block in response to the stored representation of the programming voltage indicative of the programming efficiency of the page of the memory block, and programming the different page of the memory block using its starting programming voltage.

公开(公告)号：US09183941B2

公开(公告)日：2015-11-10

申请号：US14584628

申请日：2014-12-29

Applicant: Micron Technology, Inc.

Inventor： Gian Pietro Vanalli ,  Stefano Corno ,  Giovanni Campardo ,  Angelo Visconti ,  Silvia Beltrami ,  Alexey Petrushin

IPC: G11C11/34 ,  G11C11/00 ,  H05B3/00 ,  H01L23/34 ,  G11C16/34 ,  G11C16/26

CPC classification number: G11C16/26 ,  G11C11/00 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/3431 ,  H01L23/345 ,  H01L2924/0002 ,  H05B3/00 ,  H01L2924/00

Abstract: A memory controller can provide current to a heater in a flash memory to reduce cycling induced errors. If necessary, after heating, the memory may be refreshed. In non-battery powered systems, data may be removed from the memory prior to heating and restored to the memory after heating.

公开(公告)号：US20130258774A1

公开(公告)日：2013-10-03

申请号：US13902402

申请日：2013-05-24

Applicant: Micron Technology, Inc.

Inventor： Angelo Visconti ,  Mattia Robustelli ,  Silvia Beltrami ,  Laura Tatiana Czeppel ,  Massimo Ernesto Bertuccio

IPC: G11C16/34 ,  G11C16/10

CPC classification number: G11C16/3495 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3459

Abstract: Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a memory device.

Abstract translation: 本文公开的主题涉及存储器件，更具体地涉及写入存储器件的性能。

公开(公告)号：US20250053301A1

公开(公告)日：2025-02-13

申请号：US18929570

申请日：2024-10-28

Applicant: Micron Technology, Inc,

Inventor： Jeffrey S. McNeil ,  Jonathan S. Parry ,  Ugo Russo ,  Akira Goda ,  Kishore Kumar Muchherla ,  Violante Moschiano ,  Niccolo' Righetti ,  Silvia Beltrami

IPC: G06F3/06

Abstract: Control logic in a memory device causes a first pulse to be applied to a plurality of word lines coupled to respective memory cells in a memory array. The control logic further causes a second pulse to be applied to a first set of word lines of the plurality of word lines. The control logic can cause a third pulse to be applied to a second set of word lines of the plurality of word lines and cause a fourth pulse to be applied to a source line of the memory array to erase the respective memory cells coupled to the first set of word lines and to program the respective memory cells coupled to the second set of word lines.

公开(公告)号：US20180308552A1

公开(公告)日：2018-10-25

申请号：US16019631

申请日：2018-06-27

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Silvia Beltrami ,  Angelo Visconti

IPC: G11C16/10 ,  G11C16/34 ,  G11C16/12

Abstract: Methods of operating a memory device include programming a page of a memory block of the memory device using a particular starting programming voltage, determining a programming voltage indicative of a programming efficiency of the page of the memory block during programming of the page of the memory block, storing a representation of the programming voltage indicative of the programming efficiency of the page of the memory block, setting a starting programming voltage for a different page of the memory block in response to the stored representation of the programming voltage indicative of the programming efficiency of the page of the memory block, and programming the different page of the memory block using its starting programming voltage.

公开(公告)号：US20160005473A1

公开(公告)日：2016-01-07

申请号：US14856105

申请日：2015-09-16

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Silvia Beltrami ,  Angelo Visconti

IPC: G11C16/10 ,  G11C16/34 ,  G11C16/26

CPC classification number: G11C16/10 ,  G11C16/12 ,  G11C16/3459 ,  G11C16/3463 ,  G11C16/3468 ,  G11C16/3486 ,  G11C16/3495

Abstract: Methods of operating a memory device include programming a page of a memory block of the memory device using a particular starting programming voltage, determining a programming voltage indicative of a programming efficiency of the page of the memory block during programming of the page of the memory block, storing a representation of the programming voltage indicative of the programming efficiency of the page of the memory block, setting a starting programming voltage for a different page of the memory block in response to the stored representation of the programming voltage indicative of the programming efficiency of the page of the memory block, and programming the different page of the memory block using its starting programming voltage.

Abstract translation: 操作存储器件的方法包括使用特定的起始编程电压对存储器件的存储器块的页面进行编程，在编程存储器块的页面期间确定指示存储器块的页面的编程效率的编程电压 存储指示存储器块的页面的编程效率的编程电压的表示，响应于所存储的表示编程效率的编程电压的表示来设置存储器块的不同页面的起始编程电压 存储器块的页面，并使用其启动编程电压对存储器块的不同页面进行编程。

公开(公告)号：US09142314B2

公开(公告)日：2015-09-22

申请号：US14301798

申请日：2014-06-11

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Silvia Beltrami ,  Angelo Visconti

IPC: G11C11/34 ,  G11C16/04 ,  G11C16/34 ,  G11C16/10

CPC classification number: G11C16/10 ,  G11C16/12 ,  G11C16/3459 ,  G11C16/3463 ,  G11C16/3468 ,  G11C16/3486 ,  G11C16/3495

Abstract: Certain aspects of this disclosure relate to programming an at least one flash memory cell using an at least one programming pulse with a new programming voltage having a level. The level is maintained in at least one page in a block of a flash memory controller memory, wherein the level varies as a function of a number of programming cycles applied to the at least one flash memory cell.

Abstract translation: 本公开的某些方面涉及使用具有具有电平的新编程电压的至少一个编程脉冲来编程至少一个闪存单元。 该电平被维持在闪速存储器控制器存储器的块中的至少一个页面中，其中该电平根据应用于至少一个闪存单元的编程周期的数量而变化。

公开(公告)号：US20150114946A1

公开(公告)日：2015-04-30

申请号：US14584628

申请日：2014-12-29

Applicant: Micron Technology, Inc.

Inventor： Gian Pietro Vanalli ,  Stefano Corno ,  Giovanni Campardo ,  Angelo Visconti ,  Silvia Beltrami ,  Alexey Petrushin

IPC: G11C16/26 ,  H05B3/00

CPC classification number: G11C16/26 ,  G11C11/00 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/3431 ,  H01L23/345 ,  H01L2924/0002 ,  H05B3/00 ,  H01L2924/00

Abstract: A memory controller can provide current to a heater in a flash memory to reduce cycling induced errors. If necessary, after heating, the memory may be refreshed. In non-battery powered systems, data may be removed from the memory prior to heating and restored to the memory after heating.

Abstract translation: 存储器控制器可以向闪存中的加热器提供电流以减少循环引起的误差。 如果需要，加热后，可以刷新存储器。 在非电池供电系统中，数据可能在加热之前从存储器中移除，并在加热后恢复到存储器。