公开(公告)号：US20210399006A1

公开(公告)日：2021-12-23

申请号：US16904317

申请日：2020-06-17

Applicant: Micron Technology, Inc.

Inventor： Yifen Liu ,  Tecla Ghilardi ,  George Matamis ,  Justin D. Shepherdson ,  Nancy M. Lomeli ,  Chet E. Carter ,  Erik R. Byers

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768

Abstract: A microelectronic device comprises a first set of tiers, each tier of the first set of tiers comprising alternating levels of a conductive material and an insulative material and having a first tier pitch, a second set of tiers adjacent to the first set of tiers, each tier of the second set of tiers comprising alternating levels of the conductive material and the insulative material and having a second tier pitch less than the first tier pitch, a third set of tiers adjacent to the second set of tiers, each tier of the third set of tiers comprising alternating levels of the conductive material and the insulative material and having a third tier pitch less than the second tier pitch, and a string of memory cells extending through the first set of tiers, the second set of tiers, and the third set of tiers. Related microelectronic devices, electronic systems, and methods are also described.

公开(公告)号：US10950316B2

公开(公告)日：2021-03-16

申请号：US16990137

申请日：2020-08-11

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Violante Moschiano ,  Tecla Ghilardi ,  Tommaso Vali ,  Emilio Camerlenghi ,  William C. Filipiak ,  Andrea D'Alessandro

IPC: G11C16/26 ,  G11C16/34 ,  G11C5/06 ,  G11C11/413 ,  G11C8/08

Abstract: Apparatus having plurality of data lines each selectively connected to a respective string of series-connected memory cells, a plurality of registers each configured to indicate a state of a respective data line, and logic configured to indicate when each data line of the plurality of data lines has a particular state might facilitate determination of a pass voltage of a read operation.

公开(公告)号：US20200372961A1

公开(公告)日：2020-11-26

申请号：US16990137

申请日：2020-08-11

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Violante Moschiano ,  Tecla Ghilardi ,  Tommaso Vali ,  Emilio Camerlenghi ,  William C. Filipiak ,  Andrea D'Alessandro

IPC: G11C16/34 ,  G11C16/26 ,  G11C8/08 ,  G11C11/413 ,  G11C5/06

Abstract: Apparatus having plurality of data lines each selectively connected to a respective string of series-connected memory cells, a plurality of registers each configured to indicate a state of a respective data line, and logic configured to indicate when each data line of the plurality of data lines has a particular state might facilitate determination of a pass voltage of a read operation.

公开(公告)号：US10777286B2

公开(公告)日：2020-09-15

申请号：US16267488

申请日：2019-02-05

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Violante Moschiano ,  Tecla Ghilardi ,  Tommaso Vali ,  Emilio Camerlenghi ,  William C. Filipiak ,  Andrea D'Alessandro

IPC: G11C16/26 ,  G11C16/34 ,  G11C8/08 ,  G11C11/413 ,  G11C5/06

Abstract: Methods of operating a memory, and memory configured to perform similar methods, might include sensing a state of each data line of a plurality of data lines while increasing a voltage level applied to each access line of a plurality of access lines commonly connected to a plurality of strings of series-connected memory cells, ceasing increasing the voltage level applied to each access line of the plurality of access lines in response to the state of each data line of the plurality of data lines having a particular condition, changing a voltage level applied to a particular access line of the plurality of access lines to a particular voltage level, and sensing a state of each data line of a subset of the plurality of data lines while applying the particular voltage level to the particular access line.