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公开(公告)号：US10262748B1
公开(公告)日：2019-04-16
申请号：US15838109
申请日：2017-12-11
Applicant: MACRONIX International Co., Ltd.
Inventor： Ya-Jui Lee , Atsuhiro Suzuki
Abstract: A non-volatile memory and a program method thereof are provided. The program method of the non-volatile memory includes: setting a first incremental value, and providing a plurality of first pulses of incrementally increasing voltages in sequence according to the first incremental value for performing a programming operation on a plurality of non-volatile memory cells during a first time period; and setting a second incremental value, and providing a plurality of second pulses of incrementally increasing voltages in sequence according to the second incremental value for performing a programming operation on the non-volatile memory cells during a second time period which is after the first time period, wherein the first incremental value is smaller than the second incremental value.
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公开(公告)号：US09530508B2
公开(公告)日：2016-12-27
申请号：US14558236
申请日：2014-12-02
Applicant: MACRONIX International Co., Ltd.
Inventor： Ya-Jui Lee
Abstract: A memory device and a method for operating the same are provided. The memory device includes a substrate, a plurality of word lines, and a plurality of dummy word lines. The word lines and the dummy word lines are located on the substrate. At least one side of each dummy word line is adjacent to the word line. At least one word line and at least one dummy word line form a group. The method for operating the memory device includes the following. At least one group is selected, and the group is operated. A first operational voltage is applied to the word line of the group. A second operational voltage is applied to the dummy word line of the group.
Abstract translation: 提供了一种存储器件及其操作方法。 存储器件包括衬底，多个字线和多个虚拟字线。 字线和虚拟字线位于基板上。 每个虚拟字线的至少一侧与字线相邻。 至少一个字线和至少一个虚拟字线组成一组。 用于操作存储器件的方法包括以下。 选择至少一个组，并操作组。 第一工作电压被施加到组的字线。 第二工作电压被施加到该组的虚拟字线。
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公开(公告)号：US20250124991A1
公开(公告)日：2025-04-17
申请号：US18488045
申请日：2023-10-17
Applicant: MACRONIX International Co., Ltd.
Inventor： Ya-Jui Lee , Kuan-Fu Chen
Abstract: A memory device and a programming method thereof are provided. The memory device has multiple word lines and a dummy word line set. A word line is selected from the word lines and is applied with a program voltage, and unselected word lines and the dummy word line set are applied with a pass voltage. After programming the selected word line, a program verification is performed on the selected word line. When the selected word line passes the program verification, a high bound and/or low bound check for the threshold voltage distribution of at least one of the dummy word lines is performed. When at least one of the dummy word lines fails in the high bound and/or low bound check, the status of the selected word line is shown as fail or a flag is set thereto.
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公开(公告)号：US20250069661A1
公开(公告)日：2025-02-27
申请号：US18452563
申请日：2023-08-21
Applicant: MACRONIX International Co., Ltd.
Inventor： Ya-Jui Lee
Abstract: A method of programming a memory includes performing a plurality of programming shots is provided. Each programming shot includes a pre-charge stage and a programming stage and includes the following steps. Applying a common source line voltage to a common source line or applying a bit line voltage to a bit line in the pre-charge stage, wherein the common source line voltage or the bit line voltage is applied by using incremental-step-pulse programming (ISSP) in the plurality of pre-charge stages. Applying a programming voltage to a selected word line in the programming stage, wherein the programming voltage is applied by using ISSP in the plurality of programming stages.
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公开(公告)号：US20250029667A1
公开(公告)日：2025-01-23
申请号：US18906735
申请日：2024-10-04
Applicant: Macronix International Co., Ltd.
Inventor： Che-Ping CHEN , Ya-Jui Lee
Abstract: A memory controller receives a command to program information to a memory storage array controlled by the memory controller. The memory controller determines a target memory state to store the information, and a target threshold voltage level corresponding to the target memory state. Based at least on the target memory state, the memory controller determines one or more program pulses for a pre-program cycle, including voltage levels for the one or more program pulses based at least on the target threshold voltage level. The memory controller selects a memory location in the memory storage array to program the information, and pre-programs the selected memory location by applying the one or more program pulses at respective voltage levels, the one or more program pulses applied without program verify operations. Following the pre-programming, the memory controller programs the information to the selected memory location.
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Patent Agency Ranking
公开(公告)号：US20240412793A1
公开(公告)日：2024-12-12
申请号：US18329583
申请日：2023-06-06
Applicant: MACRONIX International Co., Ltd.
Inventor： Ya-Jui Lee , Kuan-Fu Chen
Abstract: A non-volatile memory and a programming method thereof are provided. The programming method includes: performing a reading operation on a plurality of first memory cells of an Nth word line, and determining whether an equivalent threshold voltage is greater than a preset threshold value to generate a determination result, where N is a positive integer greater than 0; and in response to performing a programming operation on a plurality of second memory cells of an N+1th word line, deciding whether to adjust at least one selected programming verification voltage of a plurality of programming verification voltages by an offset value according to the determination result.
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公开(公告)号：US20180061503A1
公开(公告)日：2018-03-01
申请号：US15288785
申请日：2016-10-07
Applicant: MACRONIX International Co., Ltd.
Inventor： Ya-Jui Lee , Kuan-Fu Chen
CPC classification number: G11C16/3459 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/12 , G11C16/26
Abstract: A memory device and a programming method thereof are provided, and the programming method of the memory device includes following steps. A memory cell grouping procedure is performed to divide a plurality of memory cells into a plurality of groups. After the memory cell grouping procedure is performed, a programming procedure is performed, and the programming procedure includes following steps. A first programming pulse, a second programming pulse and a verification pulse are provided to a word line. A first group is programmed by the first programming pulse, and a second group is programmed by the second programming pulse. Whether the first group and the second group respectively pass a verification operation is determined by the verification pulse.
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公开(公告)号：US20160155510A1
公开(公告)日：2016-06-02
申请号：US14558236
申请日：2014-12-02
Applicant: MACRONIX International Co., Ltd.
Inventor： Ya-Jui Lee
Abstract: A memory device and a method for operating the same are provided. The memory device includes a substrate, a plurality of word lines, and a plurality of dummy word lines. The word lines and the dummy word lines are located on the substrate. At least one side of each dummy word line is adjacent to the word line. At least one word line and at least one dummy word line form a group. The method for operating the memory device includes the following. At least one group is selected, and the group is operated. A first operational voltage is applied to the word line of the group. A second operational voltage is applied to the dummy word line of the group.
Abstract translation: 提供了一种存储器件及其操作方法。 存储器件包括衬底，多个字线和多个虚拟字线。 字线和虚拟字线位于基板上。 每个虚拟字线的至少一侧与字线相邻。 至少一个字线和至少一个虚拟字线组成一组。 用于操作存储器件的方法包括以下。 选择至少一个组，并操作组。 第一工作电压被施加到组的字线。 第二工作电压被施加到该组的虚拟字线。
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公开(公告)号：US12136461B2
公开(公告)日：2024-11-05
申请号：US17394850
申请日：2021-08-05
Applicant: Macronix International Co., Ltd.
Inventor： Che-Ping Chen , Ya-Jui Lee
Abstract: A memory controller receives a command to program information to a memory storage array controlled by the memory controller. The memory controller determines a target memory state to store the information, and a target threshold voltage level corresponding to the target memory state. Based at least on the target memory state, the memory controller determines one or more program pulses for a pre-program cycle, including voltage levels for the one or more program pulses based at least on the target threshold voltage level. The memory controller selects a memory location in the memory storage array to program the information, and pre-programs the selected memory location by applying the one or more program pulses at respective voltage levels, the one or more program pulses applied without program verify operations. Following the pre-programming, the memory controller programs the information to the selected memory location.
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公开(公告)号：US12112803B2
公开(公告)日：2024-10-08
申请号：US18090499
申请日：2022-12-29
Applicant: MACRONIX International Co., Ltd.
Inventor： Ya-Jui Lee , Kuan-Fu Chen
Abstract: A memory device and programming method thereof are provided. A memory cell array includes a first dummy word line set, plural word lines and a second dummy word line set in sequence. The method includes: grouping the word lines into word line groups; generating at least one pass bias set having plural pass biases that are respectively corresponding to each word line group; selecting one word line for programming, and determining that the selected word line belongs to a specific word line group; and according to a programming sequence, applying a corresponding pass bias in the plural pass biases of the at least one pass bias set to at least one dummy word line in one of the first and the second dummy word line sets, wherein the corresponding pass bias corresponds to the specific word line group.
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