公开(公告)号：US20070105363A1

公开(公告)日：2007-05-10

申请号：US11614799

申请日：2006-12-21

申请人： Katherina Babich ,  Elbert Huang ,  Arpan Mahorowala ,  David Medeiros ,  Dirk Pfeiffer ,  Karen Temple

发明人： Katherina Babich ,  Elbert Huang ,  Arpan Mahorowala ,  David Medeiros ,  Dirk Pfeiffer ,  Karen Temple

IPC分类号： H01L21/4763

CPC分类号： G03F7/091 ,  G03F7/0045 ,  G03F7/0757 ,  H01L21/0274 ,  H01L21/32139 ,  Y10S430/106 ,  Y10S430/115 ,  Y10S430/143 ,  Y10S430/151

摘要： Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component.

摘要翻译： 提供了用于半导体器件加工的抗反射硬掩模组​​合物的抗反射硬掩模组​​合物和技术。 在本发明的一个方面，提供了用于光刻的抗反射硬掩模层。 抗反射硬掩模层包含含有至少一个发色团部分和至少一个透明部分的碳硅烷聚合物主链; 和交联组分。 在本发明的另一方面，提供一种用于处理半导体器件的方法。 该方法包括以下步骤：在衬底上提供材料层; 在材料层上形成抗反射硬掩模层。 抗反射硬掩模层包含含有至少一个发色团部分和至少一个透明部分的碳硅烷聚合物主链; 和交联组分。

公开(公告)号：US20060049139A1

公开(公告)日：2006-03-09

申请号：US10926404

申请日：2004-08-26

申请人： Annie Xia ,  Hiromasa Mochiki ,  Arpan Mahorowala

发明人： Annie Xia ,  Hiromasa Mochiki ,  Arpan Mahorowala

IPC分类号： C23F1/00 ,  B44C1/22

CPC分类号： H01L21/31116 ,  H01L21/32139

摘要： A method and system is described for etching a tunable etch resistant anti-reflective (TERA) coating. The TERA coating can be utilized, for example, as a hard mask, or as an anti-reflective coating for complementing a lithographic structure. The TERA coating can include a structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti, and combinations thereof, and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F. During the formation of a structure in a film stack, a pattern is transferred to the TERA coating using dry plasma etching having a SF6-based etch chemistry.

摘要翻译： 描述了用于蚀刻可调蚀抗蚀抗反射（TERA）涂层的方法和系统。 TERA涂层可以用作例如硬掩模，或作为用于补充光刻结构的抗反射涂层。 TERA涂层可以包括结构式R：C：H：X，其中R选自Si，Ge，B，Sn，Fe，Ti及其组合，并且其中X不存在或被选择 从由O，N，S和F中的一种或多种组成的组中。在膜堆叠中形成结构期间，使用具有SF 6的干等离子体蚀刻将图案转移到TERA涂层， SUB>基蚀刻化学。

公开(公告)号：US07344991B2

公开(公告)日：2008-03-18

申请号：US10640577

申请日：2003-08-14

申请人： Vaidyanathan Balasubramaniam ,  Koichiro Inazawa ,  Rich Wise ,  Arpan Mahorowala ,  Siddhartha Panda

发明人： Vaidyanathan Balasubramaniam ,  Koichiro Inazawa ,  Rich Wise ,  Arpan Mahorowala ,  Siddhartha Panda

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/0276 ,  A61M2025/024 ,  A61M2025/028 ,  H01L21/31138 ,  H01L21/31144

摘要： A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH3), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute NH3 and a hydrocarbon gas such as at least one of C2H4, CH4, C2H2, C2H6, C3H4, C3H6, C3H8, C4H6, C4H8, C4H10, C5H8, C5H10, C6H6, C6H10, and C6H12. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising ammonia (NH3), and a passivation gas.

公开(公告)号：US20060051964A1

公开(公告)日：2006-03-09

申请号：US10926403

申请日：2004-08-26

申请人： Annie Xia ,  Hiromasa Mochiki ,  Arpan Mahorowala

发明人： Annie Xia ,  Hiromasa Mochiki ,  Arpan Mahorowala

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/0338 ,  H01L21/0332 ,  H01L21/28123 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32137 ,  H01L21/32139

摘要： A method and system is described for preparing a film stack, and forming a feature in the film stack using a plurality of dry etching processes. The feature formed in the film stack can include a gate structure having a critical dimension of approximately 25 nm or less. This critical dimension can be formed in the polysilicon layer using four mask layers.

摘要翻译： 描述了一种制备薄膜叠层的方法和系统，并且使用多个干蚀刻工艺在薄膜叠层中形成特征。 形成在膜堆叠中的特征可以包括具有约25nm或更小的临界尺寸的栅极结构。 该临界尺寸可以使用四个掩模层在多晶硅层中形成。

公开(公告)号：US20050136666A1

公开(公告)日：2005-06-23

申请号：US10787898

申请日：2004-02-27

申请人： Vaidyanathan Balasubramaniam ,  Koichiro Inazawa ,  Siddhartha Panda ,  Rich Wise ,  Arpan Mahorowala

发明人： Vaidyanathan Balasubramaniam ,  Koichiro Inazawa ,  Siddhartha Panda ,  Rich Wise ,  Arpan Mahorowala

IPC分类号： H01L21/027 ,  H01L21/311 ,  H01L21/768 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01J37/32935 ,  H01L21/0271 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802

摘要： A method and system for etching an organic layer on a substrate in a plasma processing system comprising: introducing a process gas comprising NxOy, wherein x, y represent integers greater than or equal to unity. Additionally, the process chemistry can further comprise the addition of an inert gas, such as a Noble gas (i.e., He, Ne, Ar, Kr, Xe, Rn). The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an organic layer on the thin film; forming a photoresist pattern on the organic layer; and transferring the photoresist pattern to the organic layer with an etch process using a process gas comprising NxOy, wherein x, y represent integers greater than or equal to unity.

摘要翻译： 一种用于在等离子体处理系统中蚀刻衬底上的有机层的方法和系统，包括：引入包含N x O O y O y的工艺气体，其中x，y表示更大的整数 大于或等于统一 另外，工艺化学可以进一步包括添加惰性气体，例如Noble气体（即He，Ne，Ar，Kr，Xe，Rn）。 本发明还提供一种用于形成用于在衬底上蚀刻薄膜的双层掩模的方法，其中所述方法包括：在所述衬底上形成所述薄膜; 在薄膜上形成有机层; 在有机层上形成光致抗蚀剂图案; 以及使用包括N x O x O y X y的工艺气体的蚀刻工艺将光致抗蚀剂图案转移到有机层，其中x，y表示大于或等于1的整数。

公开(公告)号：US20060154184A1

公开(公告)日：2006-07-13

申请号：US10905596

申请日：2005-01-12

申请人： Arpan Mahorowala ,  Scott Bell ,  S. Dakshina Murthy ,  Stacy Rasgon ,  Hongwen Yan ,  Chih-Yuh Yang

发明人： Arpan Mahorowala ,  Scott Bell ,  S. Dakshina Murthy ,  Stacy Rasgon ,  Hongwen Yan ,  Chih-Yuh Yang

IPC分类号： G03F7/00

CPC分类号： G03F7/40 ,  H01L21/0274 ,  H01L21/31058 ,  H01L21/31144

摘要： A method of patterning a feature in a substrate to reduce edge roughness comprises forming a resist layer overlying a substrate, exposing the resist layer to create an image of a feature, and developing the exposed resist layer to leave a portion of the resist layer that creates the image of the feature. The method then includes treating the exposed resist layer with a plasma to cure the portion of the resist layer creating the feature image. The plasma treatment has an ion bombardment level insufficient to substantially etch the underlying substrate. The method then includes etching the underlying substrate to create the feature.

摘要翻译： 图案化衬底中的特征以减少边缘粗糙度的方法包括形成覆盖衬底的抗蚀剂层，暴露抗蚀剂层以产生特征的图像，以及显影曝光的抗蚀剂层以留下产生的抗蚀剂层的一部分 功能的图像。 该方法然后包括用等离子体处理曝光的抗蚀剂层以固化形成特征图像的抗蚀剂层的部分。 等离子体处理具有不足以基本上蚀刻下面的衬底的离子轰击水平。 该方法然后包括蚀刻下面的基底以产生特征。