Perpendicular magnetic recording media, magnetic recording apparatus
    11.
    发明授权
    Perpendicular magnetic recording media, magnetic recording apparatus 有权
    垂直磁记录介质,磁记录装置

    公开(公告)号:US07147941B2

    公开(公告)日:2006-12-12

    申请号:US10664870

    申请日:2003-09-22

    IPC分类号: G11B5/66

    摘要: A perpendicular magnetic recording medium which has been improved to be suitable for high-density magnetic recording and a magnetic recording apparatus using the medium are provided. The magnetic back film of a dual-layer perpendicular recording medium is caused to be constituted by a plurality of layers, and a keeper layer 17 for keeping perpendicular magnetization and layers 13 and 15 for improving the recording efficiency of a recording head are functionally separated from one another. Further, the magnetization orientations of the soft magnetic films excluding the keeper layer are defined to be in the circumferential direction of the disk, whereby the frequency of occurrence of noise is decreased.

    摘要翻译: 提供了已经改进以适合于高密度磁记录的垂直磁记录介质和使用介质的磁记录装置。 使双层垂直记录介质的磁背膜由多层构成,用于保持垂直磁化的保持层17和用于提高记录头的记录效率的层13和15在功能上与 另一个。 此外,除了保持层之外的软磁性膜的磁化取向被限定在圆盘的圆周方向上,从而噪声的发生频率降低。

    Perpendicular magnetic recording medium and fabrication method therefor
    16.
    发明授权
    Perpendicular magnetic recording medium and fabrication method therefor 失效
    垂直磁记录介质及其制造方法

    公开(公告)号:US4743491A

    公开(公告)日:1988-05-10

    申请号:US793772

    申请日:1985-11-01

    IPC分类号: G11B5/66 G11B5/73 G11B7/24

    摘要: A perpendicular magnetic recording medium according to this invention comprises an electrically conductive underlayer formed on a non-magnetic substrate, in the case where no high permeability magnetic film is deposited, and a magnetic thin film having a perpendicular magnetic anisotrophy is formed thereon. In the case of a so-called double-layer structure including a high permeablilty magnetic film, on the non-magnetic substrate are formed the high permeablilty magnetic film, an intermediate film, and a magnetic thin film one on another in this order. The nearest neighbor's distance of atoms of the underlayer and the intermediate film is not smaller than 0.25 nm (2.5 .ANG.) and not greater than 0.32 nm (3.2 .ANG.) and they are made of at least one selected from the group consisting of V, Ru, Zn, Os, Rh, Ir, Mo, W, Re, Pd, Pt, Nb, Ta, Sn, Al, Au, Ag, Ti, nitrides and oxides of these elements.

    摘要翻译: 根据本发明的垂直磁记录介质包括形成在非磁性基板上的导电底层,在没有沉积高磁导率磁性膜的情况下,并且在其上形成具有垂直磁性各向异性的磁性薄膜。 在包括高透度磁性膜的所谓双层结构的情况下,在非磁性基板上依次形成高磁导率磁性膜,中间膜和磁性薄膜。 最邻近的底层原子与中间膜的距离不小于0.25nm(2.5),不大于0.32nm(3.2),它们由选自V,Ru ,Zn,Os,Rh,Ir,Mo,W,Re,Pd,Pt,Nb,Ta,Sn,Al,Au,Ag,Ti,氮化物和这些元素的氧化物。