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公开(公告)号:US20050051795A1
公开(公告)日:2005-03-10
申请号:US10898021
申请日:2004-07-23
申请人: Chantal Arena , Pierre Tomasini , Nyles Cody , Matthias Bauer
发明人: Chantal Arena , Pierre Tomasini , Nyles Cody , Matthias Bauer
IPC分类号: C30B25/02 , C30B29/06 , C30B29/52 , H01L20060101 , H01L21/20 , H01L21/205 , H01L29/732
CPC分类号: C30B29/06 , C30B25/02 , C30B29/52 , H01L21/0245 , H01L21/02494 , H01L21/02502 , H01L21/02532 , H01L21/0262
摘要: A relaxed silicon germanium structure comprises a silicon buffer layer produced using a chemical vapor deposition process with an operational pressure greater than approximately 1 torr. The relaxed silicon germanium structure further comprises a silicon germanium layer deposited over the silicon buffer layer. The silicon germanium layer has less than about 107 threading dislocations per square centimeter. By depositing the silicon buffer layer at a reduced deposition rate, the overlying silicon germanium layer can be provided with a “crosshatch free” surface.
摘要翻译: 松弛的硅锗结构包括使用具有大于约1托的操作压力的化学气相沉积工艺制备的硅缓冲层。 松弛的硅锗结构还包括沉积在硅缓冲层上的硅锗层。 硅锗层每平方厘米具有小于约10 7个穿透位错。 通过以降低的沉积速率沉积硅缓冲层,可以提供覆盖的硅锗层“无交叉阴极线”的表面。
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公开(公告)号:US20090117717A1
公开(公告)日:2009-05-07
申请号:US11935174
申请日:2007-11-05
申请人: Pierre Tomasini , Nyles Cody
发明人: Pierre Tomasini , Nyles Cody
IPC分类号: H01L21/36 , H01L21/306
CPC分类号: H01L29/167 , C23C16/04 , C23C16/22 , C30B25/02 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02636
摘要: An embodiment provides a method for selectively depositing a single crystalline film. The method includes providing a substrate, which includes a first surface having a first surface morphology and a second surface having a second surface morphology different from the first surface morphology. A silicon precursor and BCl3 are intermixed to thereby form a feed gas. The feed gas is introduced to the substrate under chemical vapor deposition conditions. A Si-containing layer is selectively deposited onto the first surface without depositing on the second surface by introducing the feed gas.
摘要翻译: 一个实施方案提供了选择性沉积单晶膜的方法。 该方法包括提供基底,其包括具有第一表面形态的第一表面和具有不同于第一表面形态的第二表面形态的第二表面。 将硅前体和BCl 3混合,从而形成进料气体。 在化学气相沉积条件下将进料气体引入基板。 通过引入进料气体,在第一表面上选择性地沉积含Si层而不沉积在第二表面上。
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公开(公告)号:US20070264801A1
公开(公告)日:2007-11-15
申请号:US11431336
申请日:2006-05-09
申请人: Nyles Cody , Chantal Arena , Pierre Tomasini , Carlos Mazure
发明人: Nyles Cody , Chantal Arena , Pierre Tomasini , Carlos Mazure
IPC分类号: H01L21/20
CPC分类号: C23C16/22 , C23C16/24 , C23C16/45523 , C30B25/165 , C30B29/52
摘要: Pile ups of threading dislocations in thick graded buffer layer are reduced by enhancing dislocation gliding. During formation of a graded SiGe buffer layer, deposition of SiGe from a silicon precursor and a germanium precursor is interrupted one or more times with periods in which the flow of the silicon precursor to the substrate is stopped while the flow of the germanium precursor to the substrate is maintained.
摘要翻译: 通过增强位错滑行,减少厚度梯度缓冲层穿透位错的堆积。 在形成渐变的SiGe缓冲层期间,SiGe从硅前体和锗前体的沉积被中断一次或多次,其中停止向硅衬底的硅前体的流动,同时锗前体流向 保持底物。
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公开(公告)号:US07772097B2
公开(公告)日:2010-08-10
申请号:US11935174
申请日:2007-11-05
申请人: Pierre Tomasini , Nyles Cody
发明人: Pierre Tomasini , Nyles Cody
IPC分类号: H01L21/00
CPC分类号: H01L29/167 , C23C16/04 , C23C16/22 , C30B25/02 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02636
摘要: An embodiment provides a method for selectively depositing a single crystalline film. The method includes providing a substrate, which includes a first surface having a first surface morphology and a second surface having a second surface morphology different from the first surface morphology. A silicon precursor and BCl3 are intermixed to thereby form a feed gas. The feed gas is introduced to the substrate under chemical vapor deposition conditions. A Si-containing layer is selectively deposited onto the first surface without depositing on the second surface by introducing the feed gas.
摘要翻译: 一个实施方案提供了选择性沉积单晶膜的方法。 该方法包括提供基底,其包括具有第一表面形态的第一表面和具有不同于第一表面形态的第二表面形态的第二表面。 将硅前体和BCl 3混合,从而形成进料气体。 在化学气相沉积条件下将进料气体引入基板。 通过引入进料气体,在第一表面上选择性地沉积含Si层而不沉积在第二表面上。
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15.
公开(公告)号:US07427556B2
公开(公告)日:2008-09-23
申请号:US10799335
申请日:2004-03-12
申请人: Pierre Tomasini , Nyles Cody , Chantal Arena
发明人: Pierre Tomasini , Nyles Cody , Chantal Arena
CPC分类号: H01L21/02532 , C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/0262 , H01L21/02639
摘要: A method for blanket depositing a SiGe film comprises intermixing a silicon source, a germanium source and an etchant to form a gaseous precursor mixture. The method further comprises flowing the gaseous precursor mixture over a substrate under chemical vapor deposition conditions to deposit a blanket layer of epitaxial SiGe onto the substrate, whether patterned or un-patterned.
摘要翻译: 用于覆盖沉积SiGe膜的方法包括将硅源,锗源和蚀刻剂混合以形成气态前体混合物。 该方法还包括在化学气相沉积条件下将气态前体混合物流过衬底,以将外延SiGe的覆盖层沉积到衬底上,无论是图案化还是未图案化。
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