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公开(公告)号：US20210020413A1
公开(公告)日：2021-01-21
申请号：US16928220
申请日：2020-07-14
Inventor： Ting Xie , Hua Chung , Bin Dong , Xinliang Lu , Haichun Yang , Michael X. Yang
IPC: H01J37/32 , H01L21/311
Abstract: Processes for removing photoresist layer(s) from a workpiece, such as a semiconductor are provided. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The workpiece can have a photoresist layer and a low-k dielectric material layer. The method can include performing a hydrogen radical etch process on the workpiece to remove at least a portion of the photoresist layer. The method can also include exposing the workpiece to an ozone process gas to remove at least a portion of the photoresist layer.
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公开(公告)号：US20190384178A1
公开(公告)日：2019-12-19
申请号：US16402405
申请日：2019-05-03
Applicant: Mattson Technology, Inc.
Inventor： Michael X. Yang
Abstract: Post exposure bake methods are provided. In one example, a method includes placing a workpiece having a photoresist layer on a workpiece support disposed in a processing chamber. The method includes exposing the photoresist to photons of a wavelength through a photomask. The method includes performing a post exposure bake heating process on the workpiece with the photoresist heating layer. The post exposure bake heating process can include heating the workpiece with both a radiant heat source and a second heat source disposed in the workpiece support until a temperature of the workpiece reaches a post exposure bake setpoint temperature.
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公开(公告)号：US10354883B2
公开(公告)日：2019-07-16
申请号：US15958560
申请日：2018-04-20
Applicant: Mattson Technology, Inc.
Inventor： Michael X. Yang , Hua Chung , Xinliang Lu
IPC: H01L21/302 , H01L21/3065 , H01L21/30 , H01L21/02 , C23C16/452 , H01L21/311
Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.
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公开(公告)号：US12174616B2
公开(公告)日：2024-12-24
申请号：US18313655
申请日：2023-05-08
Inventor： Michael X. Yang , Markus Lieberer , Joseph Cibere
IPC: G05B19/4155 , H01L21/67
Abstract: A control system operable to train a control tuner to generate temperature setpoint tracking improvements for a thermal processing system is provided. In one example implementation, temperature setpoint tracking improvements are achieved by generating system controller parameter adjustments based on a difference between a simulated workpiece temperature estimate and an actual workpiece temperature estimate. For example, a system model can generate a simulated workpiece temperature estimate simulating an actual workpiece temperature estimate, and based on the difference between the simulated and actual workpiece temperature estimates, generate clone controller parameter adjustments. The clone controller parameter adjustments can be used to generate system controller parameter adjustments, which can improve temperature setpoint tracking for the thermal processing system.
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公开(公告)号：US12119216B2
公开(公告)日：2024-10-15
申请号：US18336552
申请日：2023-06-16
Inventor： Michael X. Yang , Rolf Bremensdorfer , Dave Camm , Joseph Cibere , Dieter Hezler , Shawming Ma , Yun Yang
IPC: H01J61/073 , H01J61/28 , H01J61/52 , H01J61/86 , H05H1/48
CPC classification number: H01J61/86 , H01J61/0732 , H01J61/28 , H01J61/526 , H05H1/48
Abstract: Apparatus, systems, and methods for processing workpieces are provided. An arc lamp can include a tube. The arc lamp can include one or more inlets configured to receive water to be circulated through the arc lamp during operation as a water wall, the water wall configured to cool the arc lamp. The arc lamp can include a plurality of electrodes configured to generate a plasma in a forming gas introduced into the arc lamp via the one or more inlets. The forming gas can be or can include a mixture of a hydrogen gas and an inert gas, the hydrogen gas in the mixture having a concentration less than 4% by volume. The hydrogen gas can be introduced into the arc lamp prior to generating the plasma. The arc lamp may be used for processing workpieces.
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Patent Agency Ranking
公开(公告)号：US11812523B2
公开(公告)日：2023-11-07
申请号：US16898495
申请日：2020-06-11
Inventor： Michael X. Yang , Rolf Bremensdorfer
CPC classification number: H05B3/0047 , G02F1/163 , H05B1/0233
Abstract: Apparatus, systems, and methods for processing workpieces are provided. In one example, the system includes a processing chamber. The system includes a workpiece support configured to support a workpiece within the processing chamber. The system includes a heat source configured to emit light toward the workpiece. The system includes a shutter disposed between the workpiece and the heat source. The shutter includes an electrochromic material configurable in a translucent state and an opaque state. When the electrochromic material is configured in the opaque state, the shutter reduces transmission of the light through the shutter, and when the electrochromic material is configured in the translucent state, the light at least partially passes through the shutter. The system includes a controller configured to control the shutter to reduce transmission of light through the shutter during a thermal treatment process.
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公开(公告)号：US20230352294A1
公开(公告)日：2023-11-02
申请号：US18336552
申请日：2023-06-16
Inventor： Michael X. Yang , Rolf Bremensdorfer , Dave Camm , Joseph Cibere , Dieter Hezler , Shawming Ma , Yun Yang
IPC: H01J61/86 , H01J61/073 , H05H1/48 , H01J61/52 , H01J61/28
CPC classification number: H01J61/86 , H01J61/0732 , H05H1/48 , H01J61/526 , H01J61/28
Abstract: Apparatus, systems, and methods for processing workpieces are provided. An arc lamp can include a tube. The arc lamp can include one or more inlets configured to receive water to be circulated through the arc lamp during operation as a water wall, the water wall configured to cool the arc lamp. The arc lamp can include a plurality of electrodes configured to generate a plasma in a forming gas introduced into the arc lamp via the one or more inlets. The forming gas can be or can include a mixture of a hydrogen gas and an inert gas, the hydrogen gas in the mixture having a concentration less than 4% by volume. The hydrogen gas can be introduced into the arc lamp prior to generating the plasma. The arc lamp may be used for processing workpieces.
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公开(公告)号：US20230091035A1
公开(公告)日：2023-03-23
申请号：US17994985
申请日：2022-11-28
Inventor： Martin L. Zucker , Peter J. Lembesis , Ted Tevis , Ryan M. Pakulski , Michael X. Yang
IPC: H01J37/32 , H01L21/677 , H01L21/68 , B25J11/00 , B25J15/00 , H01L21/67 , H01L21/683 , H01L21/687 , H01L21/02
Abstract: Systems and methods for processing workpieces, such as semiconductor workpieces are provided. One example embodiment is directed to a processing system for processing a plurality of workpieces. The processing system can include a loadlock chamber, a transfer chamber, and at least two processing chamber having two or more processing stations. The processing system further includes a storage chamber for storing replaceable parts. The transfer chamber includes a workpiece handling robot. The workpiece handling robot can be configured to transfer a plurality of replaceable parts from the processing stations to the storage chamber.
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公开(公告)号：US11521847B2
公开(公告)日：2022-12-06
申请号：US16861345
申请日：2020-04-29
Inventor： Michael X. Yang , Christian Pfahler , Alexandr Cosceev
Abstract: Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a hydrogen gas mixed with an inert gas can be reacted with an oxygen gas to oxidize a workpiece at atmospheric pressure. A chemical reaction of a hydrogen gas with an oxygen gas facilitated by a hot workpiece surface can positively affect an oxidation process. A reaction speed of the chemical reaction can be slowed down by mixing the hydrogen gas with an inert gas. Such mixture can effectively reduce a partial pressure of the hydrogen gas. As such, the oxidation process can be carried out at atmospheric pressure, thereby, in an atmospheric thermal processing chamber.
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公开(公告)号：US20220223405A1
公开(公告)日：2022-07-14
申请号：US17706090
申请日：2022-03-28
Inventor： Shuang Meng , Shawming Ma , Michael X. Yang
Abstract: Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece into a process chamber; vaporizing a solvent to create a vaporized solvent; introducing the vaporized solvent into the process chamber; and exposing the workpiece to the vaporized solvent.
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