公开(公告)号：US20210391185A1

公开(公告)日：2021-12-16

申请号：US17459070

申请日：2021-08-27

Applicant: Beijing E-Town Semiconductor Technology, Co., LTD ,  Mattson Technology, Inc.

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  C23C16/32 ,  C23C16/56

Abstract: Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a fluorine and oxygen plasma-based process can be used to smooth a roughened surface of a silicon and/or a silicon containing structure. The process can include generating species from a process gas using an inductive coupling element in a first chamber. The process can include introducing a fluorine containing gas and an oxygen containing gas with the species to create a mixture. The process can further include exposing the silicon and/or the silicon containing structure to the mixture such that the mixture at least partially etches a roughened portion to leave a smoother surface of the silicon and/or the silicon containing structure.

公开(公告)号：US11107695B2

公开(公告)日：2021-08-31

申请号：US16718356

申请日：2019-12-18

Applicant: Beijing E-Town Semiconductor Technology, Co., LTD ,  Mattson Technology, Inc.

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  C23C16/32 ,  C23C16/56 ,  H01L29/66

Abstract: Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a fluorine and oxygen plasma-based process can be used to smooth a roughened surface of a silicon and/or a silicon containing structure. The process can include generating species from a process gas using an inductive coupling element in a first chamber. The process can include introducing a fluorine containing gas and an oxygen containing gas with the species to create a mixture. The process can further include exposing the silicon and/or the silicon containing structure to the mixture such that the mixture at least partially etches a roughened portion to leave a smoother surface of the silicon and/or the silicon containing structure.

公开(公告)号：US20210202231A1

公开(公告)日：2021-07-01

申请号：US17120382

申请日：2020-12-14

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Jeyta Anand Sahay ,  Hua Chung ,  Qi Zhang

IPC: H01L21/02 ,  H01L21/311 ,  B08B7/00 ,  B08B7/04

Abstract: Apparatus, systems, and methods for conducting a hardmask (e.g., boron doped amorphous carbon hardmask) removal process on a workpiece are provided. In one example implementation, a method includes supporting a workpiece on a workpiece support in a processing chamber. The method can include generating a plasma from a process gas in a plasma chamber using a plasma source. The process gas includes a fluorine containing gas. The method can include exposing the workpiece to one or more radicals generated in the plasma to perform a plasma strip process on the workpiece to at least partially remove the hardmask layer from the workpiece. The method can include exposing the workpiece to one or more hydrogen radicals as a passivation agent during the plasma strip process.

公开(公告)号：US20210202214A1

公开(公告)日：2021-07-01

申请号：US17201081

申请日：2021-03-15

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/311

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include conducting a pre-treatment process on a processing chamber to generate a hydrogen radical affecting layer on a surface of the processing chamber prior to performing a hydrogen radical based surface treatment process on a workpiece in the processing chamber. In this manner, a pretreatment process can be conducted to condition a processing chamber to increase uniformity of hydrogen radical exposure to a workpiece.

公开(公告)号：US11039527B2

公开(公告)日：2021-06-15

申请号：US16258744

申请日：2019-01-28

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Shuang Meng ,  Xinliang Lu ,  Shawming Ma ,  Hua Chung

IPC: H05H1/00 ,  G01N21/00 ,  H01J37/32

Abstract: Plasma processing apparatus and associated methods for detecting air leak are provided. In one example implementation, the plasma processing apparatus can include a processing chamber to process a workpiece, a plasma chamber separated from the processing chamber by a separation grid, and an inductive coupling element to induce an oxygen plasma using a process gas in the plasma chamber. The plasma processing apparatus can detect afterglow emission strength from reaction between nitric oxide (NO) and oxygen radical(s) in a process space downstream to an oxygen plasma to measure nitrogen concentrations due to presence of air leak.

公开(公告)号：US20210118694A1

公开(公告)日：2021-04-22

申请号：US17071293

申请日：2020-10-15

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Qi Zhang ,  Haichun Yang ,  Hua Chung ,  Ting Xie ,  Michael X. Yang

IPC: H01L21/3213

Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.

公开(公告)号：US10910228B2

公开(公告)日：2021-02-02

申请号：US16357800

申请日：2019-03-19

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/768 ,  H01L21/3213 ,  H01L21/321 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/302 ,  H01L21/30 ,  H01L21/027 ,  H01L21/02 ,  H01J37/32 ,  C23F4/00 ,  C23F1/12 ,  C23C16/452 ,  B01D67/00

Abstract: Surface treatment processes for treating a workpiece with organic radicals are provided. In one example implementation, a method for processing a workpiece having a semiconductor material and a carbon containing layer (e.g., photoresist) can include a surface treatment process on the workpiece. The surface treatment process can include generating one or more species in a first chamber (e.g., a plasma chamber). The surface treatment process can include mixing one or more hydrocarbon radicals with the species to create a mixture. The surface treatment process can include exposing the carbon containing layer to the mixture in a second chamber (e.g., a processing chamber).

公开(公告)号：US20200245444A1

公开(公告)日：2020-07-30

申请号：US16258744

申请日：2019-01-28

Applicant: Mattson Technology, Inc.

Inventor： Shuang Meng ,  Xinliang Lu ,  Shawming Ma ,  Hua Chung

IPC: H05H1/00 ,  H01J37/32 ,  G01N21/00

Abstract: Plasma processing apparatus and associated methods for detecting air leak are provided. In one example implementation, the plasma processing apparatus can include a processing chamber to process a workpiece, a plasma chamber separated from the processing chamber by a separation grid, and an inductive coupling element to induce an oxygen plasma using a process gas in the plasma chamber. The plasma processing apparatus can detect afterglow emission strength from reaction between nitric oxide (NO) and oxygen radical(s) in a process space downstream to an oxygen plasma to measure nitrogen concentrations due to presence of air leak.

公开(公告)号：US20200234969A1

公开(公告)日：2020-07-23

申请号：US16744403

申请日：2020-01-16

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Shanyu Wang ,  Ting Xie ,  Chun Yan ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

IPC: H01L21/311 ,  H01J37/32

Abstract: Apparatus, systems, and methods for processing a workpiece are provided. In one example implementation, the workpiece can include a silicon nitride layer and a silicon layer. The method can include admitting an ozone gas into a processing chamber. The method can include exposing the workpiece to the ozone gas. The method can include generating one or more species from a process gas using a plasma induced in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The method can further include exposing the workpiece to the filtered mixture in the processing chamber such that the filtered mixture at least partially etches the silicon nitride layer more than the silicon layer. Due to ozone gas reacting with surface of silicon layer prior to etching process with fluorine-containing gas, selective silicon nitride etch over silicon can be largely promoted.

公开(公告)号：US20200161094A1

公开(公告)日：2020-05-21

申请号：US16658259

申请日：2019-10-21

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/311

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include conducting a pre-treatment process on a processing chamber to generate a hydrogen radical affecting layer on a surface of the processing chamber prior to performing a hydrogen radical based surface treatment process on a workpiece in the processing chamber. In this manner, a pretreatment process can be conducted to condition a processing chamber to increase uniformity of hydrogen radical exposure to a workpiece.