RECLAIMING DISCARDED SOLID STATE DEVICES
    11.
    发明申请
    RECLAIMING DISCARDED SOLID STATE DEVICES 有权
    重新抛弃固定状态装置

    公开(公告)号:US20130212427A1

    公开(公告)日:2013-08-15

    申请号:US13396020

    申请日:2012-02-14

    IPC分类号: G06F11/16

    摘要: Discarded memory devices unfit for an original purpose can be reclaimed for reuse for another purpose. The discarded memory devices are tested and evaluated to determine the level of performance degradation therein. A set of an alternate usage and an information encoding scheme to facilitate a reuse of the tested memory device is identified based on the evaluation of the discarded memory device. A memory chip controller may be configured to facilitate usage of reclaimed memory devices by enabling a plurality of encoding schemes therein. Further, a memory device can be configured to facilitate diagnosis of the functionality, and to facilitate usage as a discarded memory unit. Waste due to discarded memory devices can be thereby reduced.

    摘要翻译: 废弃的不适合原始目的的存储设备可以回收再利用用于另一目的。 对废弃的存储器件进行测试和评估,以确定其中性能下降的程度。 基于对废弃的存储器件的评估来识别一组替代使用和信息编码方案,以便于重新使用被测试的存储器件。 存储器芯片控制器可以被配置为通过使能其中的多个编码方案来促进再生存储器件的使用。 此外,存储器装置可以被配置为便于诊断功能,并且便于作为丢弃的存储器单元的使用。 因此可以减少由于废弃的存储器件造成的浪费。

    Probabilistic multi-tier error correction in not-and (NAND) flash memory
    12.
    发明授权
    Probabilistic multi-tier error correction in not-and (NAND) flash memory 有权
    不和(NAND)闪存中的概率多层纠错

    公开(公告)号:US08464137B2

    公开(公告)日:2013-06-11

    申请号:US12960004

    申请日:2010-12-03

    IPC分类号: G06F11/00

    摘要: Error correction in not-and (NAND) flash memory including a system for retrieving data from memory. The system includes a decoder in communication with a memory. The decoder is for performing a method that includes receiving a codeword stored on a page in the memory, the codeword including data and first-tier check symbols that are generated in response to the data. The method further includes determining that the codeword includes errors that cannot be corrected using the first-tier check symbols, and in response second-tier check symbols are received. The second-tier check symbols are generated in response to receiving the data and to the contents of other pages in the memory that were written prior to the page containing the codeword. The codeword is corrected in response to the second-tier check symbols. The corrected codeword is output.

    摘要翻译: 在非NAND(NAND)闪存中包括用于从存储器检索数据的系统的纠错。 该系统包括与存储器通信的解码器。 解码器用于执行包括接收存储在存储器中的页面上的码字的方法,所述码字包括响应于该数据生成的数据和第一层校验符号。 该方法还包括确定码字包括不能使用第一层校验符号校正的错误,并且响应于接收到第二层校验符号。 响应于接收到包含码字的页面之前写入的数据和存储器中其他页面的内容,生成第二层校验符号。 响应于第二层校验符号校正码字。 校正的码字被输出。

    Multi-write coding of non-volatile memories
    13.
    发明授权
    Multi-write coding of non-volatile memories 有权
    非易失性存储器的多写编码

    公开(公告)号:US08176234B2

    公开(公告)日:2012-05-08

    申请号:US12631470

    申请日:2009-12-04

    IPC分类号: G06F12/00

    摘要: Multi-write coding of non-volatile memories including a method that receives write data, and a write address of a memory page. The memory page is in either an erased state or a previously written state. If the memory page is in the erased state: selecting a first codeword from a code such that the first codeword encodes the write data and is consistent with a target set of distributions of electrical charge levels in the memory page; and writing the first codeword to the memory page. If the memory page is in the previously written state: selecting a coset from a linear code such that the coset encodes the write data and includes one or more words that are consistent with previously written content of the memory page; selecting a subsequent codeword from the one or more words in the coset; and writing the subsequent codeword to the memory page.

    摘要翻译: 包括接收写入数据的方法的非易失性存储器的多写入编码以及存储器页面的写入地址。 存储器页面处于擦除状态或先前写入的状态。 如果存储器页面处于擦除状态:从代码中选择第一码字,使得第一码字对写入数据进行编码,并与存储器页面中的电荷电平分布的目标集合一致; 以及将所述第一码字写入所述存储器页。 如果存储器页面处于先前写入的状态:从线性代码选择陪集,使得陪集对编写数据进行编码并且包括与存储器页面的先前写入的内容一致的一个或多个单词; 从陪集中的一个或多个单词中选择随后的码字; 以及将所述后续码字写入所述存储器页面。

    Reclaiming discarded solid state devices
    15.
    发明授权
    Reclaiming discarded solid state devices 有权
    回收废弃的固态设备

    公开(公告)号:US08868978B2

    公开(公告)日:2014-10-21

    申请号:US13396020

    申请日:2012-02-14

    IPC分类号: G06F11/00

    摘要: Discarded memory devices unfit for an original purpose can be reclaimed for reuse for another purpose. The discarded memory devices are tested and evaluated to determine the level of performance degradation therein. A set of an alternate usage and an information encoding scheme to facilitate a reuse of the tested memory device is identified based on the evaluation of the discarded memory device. A memory chip controller may be configured to facilitate usage of reclaimed memory devices by enabling a plurality of encoding schemes therein. Further, a memory device can be configured to facilitate diagnosis of the functionality, and to facilitate usage as a discarded memory unit. Waste due to discarded memory devices can be thereby reduced.

    摘要翻译: 废弃的不适合原始目的的存储设备可以回收再利用用于另一目的。 对废弃的存储器件进行测试和评估,以确定其中性能下降的程度。 基于对废弃的存储器件的评估来识别一组替代使用和信息编码方案,以便于重新使用被测试的存储器件。 存储器芯片控制器可以被配置为通过使能其中的多个编码方案来促进再生存储器件的使用。 此外,存储器装置可以被配置为便于诊断功能,并且便于作为丢弃的存储器单元的使用。 因此可以减少由于废弃的存储器件造成的浪费。

    Isolation of faulty links in a transmission medium
    16.
    发明授权
    Isolation of faulty links in a transmission medium 有权
    隔离传输介质中的故障链路

    公开(公告)号:US08862944B2

    公开(公告)日:2014-10-14

    申请号:US12822508

    申请日:2010-06-24

    摘要: Isolation of faulty links in a transmission medium including a method that includes receiving an atomic data unit via a multi-link transmission medium that has a plurality of transmission links. An error condition is detected and it is determined that the error condition is isolated to a single transmission link. It is determined if the single transmission link has been isolated previously as a failing transmission link a specified number of times within an interval specified by a timer. If the single transmission link has been isolated previously as a failing transmission link a specified number of times within an interval specified by a timer then: identifying the single transmission link as a faulty transmission link; resetting the timer; and outputting an identifier of the single transmission link.

    摘要翻译: 隔离传输介质中的故障链路,包括包括通过具有多个传输链路的多链路传输介质接收原子数据单元的方法。 检测到错误状况,并且确定错误状况被隔离到单个传输链路。 在由定时器指定的间隔内,确定单个传输链路是否已经被隔离为先前被隔离的传输链路指定的次数。 如果单个传输链路在由定时器指定的间隔内已经被隔离为失败的传输链路指定的次数,则:将单个传输链路识别为有故障的传输链路; 重置定时器; 并输出单个传输链路的标识符。

    ISOLATION OF FAULTY LINKS IN A TRANSMISSION MEDIUM
    17.
    发明申请
    ISOLATION OF FAULTY LINKS IN A TRANSMISSION MEDIUM 有权
    在传输介质中分离故障链路

    公开(公告)号:US20110320881A1

    公开(公告)日:2011-12-29

    申请号:US12822508

    申请日:2010-06-24

    IPC分类号: G06F11/34

    摘要: Isolation of faulty links in a transmission medium including a method that includes receiving an atomic data unit via a multi-link transmission medium that has a plurality of transmission links An error condition is detected and it is determined that the error condition is isolated to a single transmission link. It is determined if the single transmission link has been isolated previously as a failing transmission link a specified number of times within an interval specified by a timer. If the single transmission link has been isolated previously as a failing transmission link a specified number of times within an interval specified by a timer then: identifying the single transmission link as a faulty transmission link; resetting the timer; and outputting an identifier of the single transmission link.

    摘要翻译: 隔离传输介质中的故障链路,包括包括通过具有多个传输链路的多链路传输介质接收原子数据单元的方法检测到错误状况,并且确定错误状况被隔离为单个 传输链路。 在由定时器指定的间隔内,确定单个传输链路是否已经被隔离为先前被隔离的传输链路指定的次数。 如果单个传输链路在由定时器指定的间隔内已经被隔离为失败的传输链路指定的次数,则:将单个传输链路识别为有故障的传输链路; 重置定时器; 并输出单个传输链路的标识符。

    MULTI-WRITE CODING OF NON-VOLATILE MEMORIES
    18.
    发明申请
    MULTI-WRITE CODING OF NON-VOLATILE MEMORIES 有权
    非易失性存储器的多写编码

    公开(公告)号:US20110138104A1

    公开(公告)日:2011-06-09

    申请号:US12631470

    申请日:2009-12-04

    IPC分类号: G06F12/00 G06F12/02

    摘要: Multi-write coding of non-volatile memories including a method that receives write data, and a write address of a memory page. The memory page is in either an erased state or a previously written state. If the memory page is in the erased state: selecting a first codeword from a code such that the first codeword encodes the write data and is consistent with a target set of distributions of electrical charge levels in the memory page; and writing the first codeword to the memory page. If the memory page is in the previously written state: selecting a coset from a linear code such that the coset encodes the write data and includes one or more words that are consistent with previously written content of the memory page; selecting a subsequent codeword from the one or more words in the coset; and writing the subsequent codeword to the memory page.

    摘要翻译: 包括接收写入数据的方法的非易失性存储器的多写入编码以及存储器页面的写入地址。 存储器页面处于擦除状态或先前写入的状态。 如果存储器页面处于擦除状态:从代码中选择第一码字,使得第一码字对写入数据进行编码,并与存储器页面中的电荷电平分布的目标集合一致; 以及将所述第一码字写入所述存储器页。 如果存储器页面处于先前写入的状态:从线性代码选择陪集,使得陪集对编写数据进行编码并且包括与存储器页面的先前写入的内容一致的一个或多个单词; 从陪集中的一个或多个单词中选择随后的码字; 以及将所述后续码字写入所述存储器页面。

    PROBABILISTIC MULTI-TIER ERROR CORRECTION IN NOT-AND (NAND) FLASH MEMORY
    19.
    发明申请
    PROBABILISTIC MULTI-TIER ERROR CORRECTION IN NOT-AND (NAND) FLASH MEMORY 有权
    非 - 和(NAND)闪存中的概念多层错误校正

    公开(公告)号:US20120144272A1

    公开(公告)日:2012-06-07

    申请号:US12960004

    申请日:2010-12-03

    IPC分类号: H03M13/05 G06F11/10

    摘要: Error correction in not-and (NAND) flash memory including a system for retrieving data from memory. The system includes a decoder in communication with a memory. The decoder is for performing a method that includes receiving a codeword stored on a page in the memory, the codeword including data and first-tier check symbols that are generated in response to the data. The method further includes determining that the codeword includes errors that cannot be corrected using the first-tier check symbols, and in response second-tier check symbols are received. The second-tier check symbols are generated in response to receiving the data and to the contents of other pages in the memory that were written prior to the page containing the codeword. The codeword is corrected in response to the second-tier check symbols. The corrected codeword is output.

    摘要翻译: 在非NAND(NAND)闪存中包括用于从存储器检索数据的系统的纠错。 该系统包括与存储器通信的解码器。 解码器用于执行包括接收存储在存储器中的页面上的码字的方法,所述码字包括响应于该数据生成的数据和第一层校验符号。 该方法还包括确定码字包括不能使用第一层校验符号校正的错误,并且响应于接收到第二层校验符号。 响应于接收到包含码字的页面之前写入的数据和存储器中的其他页面的内容,生成第二层校验符号。 响应于第二层校验符号校正码字。 校正的码字被输出。

    COMPUTER MEMORY WITH DYNAMIC CELL DENSITY
    20.
    发明申请
    COMPUTER MEMORY WITH DYNAMIC CELL DENSITY 审中-公开
    具有动态细胞密度的计算机存储器

    公开(公告)号:US20110252215A1

    公开(公告)日:2011-10-13

    申请号:US12757738

    申请日:2010-04-09

    IPC分类号: G06F12/02

    摘要: A computer memory with dynamic cell density including a method that obtains a target size for a first memory region. The first memory region includes first memory units operating at a first density. The first memory units are includes in a memory in a memory system. The memory is operable at the first density and a second density. The method also includes: determining that a current size of the first memory region is not within a threshold of the target size and that the first memory region is smaller than the target size; identifying a second memory unit currently operating at the second density in a second memory region, the second memory unit included in the memory; and dynamically reassigning, during normal system operation, the second memory unit into the first memory region, the second memory unit operating at the first density after being reassigned to the first memory region.

    摘要翻译: 一种具有动态单元密度的计算机存储器,包括获得第一存储器区域的目标尺寸的方法。 第一存储器区域包括以第一密度操作的第一存储器单元。 第一存储器单元包括在存储器系统的存储器中。 存储器可在第一密度和第二密度下操作。 所述方法还包括:确定所述第一存储器区域的当前大小不在所述目标大小的阈值内,并且所述第一存储器区域小于所述目标大小; 识别当前在第二存储器区域以第二密度操作的第二存储器单元,所述第二存储器单元包括在存储器中; 以及在正常系统操作期间将所述第二存储器单元动态地重新分配到所述第一存储器区域中,所述第二存储器单元在被重新分配给所述第一存储器区域之后以所述第一密度操作。