中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

43 records (took 0.02 seconds)

    Memory Arrays And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
    12.
    发明申请
    Memory Arrays And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells 有权

    公开(公告)号：US20210111064A1

    公开(公告)日：2021-04-15

    申请号：US16599856

    申请日：2019-10-11

    Applicant: Micron Technology, Inc.

    Inventor： Daniel Billingsley ,  Jordan D. Greenlee ,  Yongjun Jeff Hu

    IPC: H01L21/762 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157

    Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers. Horizontally-elongated trenches are formed into the stack to form laterally-spaced memory-block regions. Bridge material is formed across the trenches laterally-between and longitudinally-along immediately-laterally-adjacent of the memory-block regions. The bridge material comprises longitudinally-alternating first and second regions. The first regions of the bridge material are ion implanted differently than the second regions of the bridge material to change relative etch rate of one of the first or second regions relative to the other in an etching process. The first and second regions are subjected to the etching process to selectively etch away one of the first and second regions relative to the other to form bridges that extend across the trenches laterally-between and longitudinally-spaced-along the immediately-laterally-adjacent memory-block regions. Other embodiments and structure independent of method are disclosed.

    Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
    14.
    发明申请
    Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells 有权

    公开(公告)号：US20220068959A1

    公开(公告)日：2022-03-03

    申请号：US17068430

    申请日：2020-10-12

    Applicant: Micron Technology, Inc.

    Inventor： Daniel Billingsley ,  Jordan D. Greenlee ,  John D. Hopkins ,  Yongjun Jeff Hu ,  Swapnil Lengade

    IPC: H01L27/11582 ,  H01L27/11556 ,  H01L21/311

    Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming an upper stack directly above a lower stack. The lower stack comprises vertically-alternating lower-first-tiers and lower-second-tiers. The upper stack comprises vertically-alternating upper-first-tiers and upper-second-tiers. Lower channel openings extend through the lower-first-tiers and the lowers-second-tiers. The lower channel openings have sacrificial material therein. An upper of the lower-first-tiers or a lower of the upper-first-tiers comprises non-stoichiometric silicon nitride comprising (a) or (b), where (a): a nitrogen-to-silicon atomic ratio greater than 1.33 and less than 1.5; and (b): a nitrogen-to-silicon atomic ratio greater than or equal to 1.0 and less than 1.33. A higher of the upper-first-tiers that is above said lower upper-first-tier comprises silicon nitride not having either the (a) or the (b). Upper channel openings are etched through the upper-first-tiers and the upper-second-tiers to stop on said upper lower-first-tier or said lower upper-first-tier. After the stop, the sacrificial material is removed from the lower channel openings and form channel-material strings in the upper and lower channel openings. Other embodiments, including structure independent of method, are disclosed.

    Memory Arrays And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
    17.
    发明申请
    Memory Arrays And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells 有权

    公开(公告)号：US20210233801A1

    公开(公告)日：2021-07-29

    申请号：US17228937

    申请日：2021-04-13

    Applicant: Micron Technology, Inc.

    Inventor： Daniel Billingsley ,  Jordan D. Greenlee ,  Yongjun Jeff Hu

    IPC: H01L21/762 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157

    Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers. Horizontally-elongated trenches are formed into the stack to form laterally-spaced memory-block regions. Bridge material is formed across the trenches laterally-between and longitudinally-along immediately-laterally-adjacent of the memory-block regions. The bridge material comprises longitudinally-alternating first and second regions. The first regions of the bridge material are ion implanted differently than the second regions of the bridge material to change relative etch rate of one of the first or second regions relative to the other in an etching process. The first and second regions are subjected to the etching process to selectively etch away one of the first and second regions relative to the other to form bridges that extend across the trenches laterally-between and longitudinally-spaced-along the immediately-laterally-adjacent memory-block regions. Other embodiments and structure independent of method are disclosed.

    Memory arrays and methods used in forming a memory array comprising strings of memory cells
    18.
    发明授权
    Memory arrays and methods used in forming a memory array comprising strings of memory cells 有权

    公开(公告)号：US11011408B2

    公开(公告)日：2021-05-18

    申请号：US16599856

    申请日：2019-10-11

    Applicant: Micron Technology, Inc.

    Inventor： Daniel Billingsley ,  Jordan D. Greenlee ,  Yongjun Jeff Hu

    IPC: H01L21/762 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157 ,  H01L21/311 ,  H01L27/11556 ,  H01L27/11582 ,  H01L21/3115

    Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers. Horizontally-elongated trenches are formed into the stack to form laterally-spaced memory-block regions. Bridge material is formed across the trenches laterally-between and longitudinally-along immediately-laterally-adjacent of the memory-block regions. The bridge material comprises longitudinally-alternating first and second regions. The first regions of the bridge material are ion implanted differently than the second regions of the bridge material to change relative etch rate of one of the first or second regions relative to the other in an etching process. The first and second regions are subjected to the etching process to selectively etch away one of the first and second regions relative to the other to form bridges that extend across the trenches laterally-between and longitudinally-spaced-along the immediately-laterally-adjacent memory-block regions. Other embodiments and structure independent of method are disclosed.

Patent Agency Ranking