公开(公告)号：US11678482B2

公开(公告)日：2023-06-13

申请号：US17557389

申请日：2021-12-21

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Yoshiaki Fukuzumi ,  Jun Fujiki ,  Shuji Tanaka ,  Masashi Yoshida ,  Masanobu Saito ,  Yoshihiko Kamata

IPC: H01L27/11556 ,  G11C5/02 ,  G11C5/06 ,  G11C16/34 ,  H01L27/11582

CPC classification number: H01L27/11556 ,  G11C5/025 ,  G11C5/06 ,  G11C16/3427 ,  H01L27/11582

Abstract: Arrays of memory cells might include a first upper data line, a second upper data line, a lower data line, a first pass gate selectively connected to the lower data line, a second pass gate connected to the first pass gate and selectively connected to the lower data line, a third pass gate selectively connected to the lower data line, a fourth pass gate connected to the third pass gate and selectively connected to the lower data line, unit column structures selectively connected to a respective one of the upper data lines and capacitively coupled to a first channel of a respective one of the pass gates, and control lines capacitively coupled to a second channel of a respective one of the pass gates.

公开(公告)号：US20220383960A1

公开(公告)日：2022-12-01

申请号：US17876718

申请日：2022-07-29

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Yoshiaki Fukuzumi ,  Jun Fujiki ,  Shuji Tanaka ,  Masashi Yoshida ,  Masanobu Saito ,  Yoshihiko Kamata

IPC: G11C16/26 ,  G11C16/04

Abstract: Methods of forming integrated circuit structures for a capacitive sense NAND memory include forming a first semiconductor overlying a dielectric, forming a second semiconductor to be in contact with a first end of the first semiconductor, forming a third semiconductor to be in contact with a second end of the first semiconductor opposite the first end of the first semiconductor, forming a vertical channel material structure overlying the first semiconductor and having a channel material capacitively coupled to the first semiconductor, and forming a plurality of series-connected field-effect transistors adjacent the vertical channel material structure.

公开(公告)号：US11437106B2

公开(公告)日：2022-09-06

申请号：US17111729

申请日：2020-12-04

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Yoshiaki Fukuzumi ,  Jun Fujiki ,  Shuji Tanaka ,  Masashi Yoshida ,  Masanobu Saito ,  Yoshihiko Kamata

IPC: G11C11/04 ,  G11C16/26 ,  G11C16/04

Abstract: An array of memory cells might include a first data line, a second data line, a source, a capacitance selectively connected to the first data line, a string of series-connected non-volatile memory cells between the first data line and the capacitance, and a pass gate selectively connected between the second data line and the source, wherein an electrode of the capacitance is capacitively coupled to a channel of the pass gate.

公开(公告)号：US20220180939A1

公开(公告)日：2022-06-09

申请号：US17111770

申请日：2020-12-04

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Yoshiaki Fukuzumi ,  Jun Fujiki ,  Shuji Tanaka ,  Masashi Yoshida ,  Masanobu Saito ,  Yoshihiko Kamata

IPC: G11C16/26 ,  G11C16/04 ,  G11C16/10

Abstract: Memory might include a non-volatile memory cell, a capacitance selectively connected to the non-volatile memory cell, a field-effect transistor having a channel capacitively coupled to an electrode of the capacitance, and a controller for access of the non-volatile memory cell configured to cause the memory to increase a voltage level of the electrode of the capacitance, selectively discharge the voltage level of the electrode of the capacitance through the non-volatile memory cell responsive to a data state stored in the non-volatile memory cell, and determine whether the field-effect transistor is activated in response to a remaining voltage level of the electrode of the capacitance.

公开(公告)号：US20240028253A1

公开(公告)日：2024-01-25

申请号：US18224538

申请日：2023-07-20

Applicant: Micron Technology, Inc.

Inventor： Avinash Rajagiri ,  Ching-Huang Lu ,  Aman Gupta ,  Shuji Tanaka ,  Masashi Yoshida ,  Shinji Sato ,  Yingda Dong

IPC: G06F3/06

CPC classification number: G06F3/0655 ,  G06F3/0604 ,  G06F3/0679

Abstract: A memory device can include a memory array coupled with a control logic. The control logic initiates a program operation on the memory array, the program operation including a program phase and a program recovery phase. The control logic causes a program voltage to be applied to a selected word line during the program phase. The control logic causes a select gate drain coupled with a string of memory cells to deactivate during the program recovery phase after applying the program voltage, where the string of memory cells include a plurality of memory cells each coupled to a corresponding word line of a plurality of wordlines. The control logic causes a voltage to be applied to a select gate source coupled with the string of memory cells to activate the select gate source during the program recovery phase concurrent to causing the select gate drain to deactivate.

公开(公告)号：US20220351785A1

公开(公告)日：2022-11-03

申请号：US17861502

申请日：2022-07-11

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Yoshiaki Fukuzumi ,  Jun Fujiki ,  Shuji Tanaka ,  Masashi Yoshida ,  Masanobu Saito ,  Yoshihiko Kamata

IPC: G11C16/26 ,  G11C16/04 ,  G11C16/10

Abstract: Memory might include a plurality of series-connected non-volatile memory cells, a plurality of series-connected first field-effect transistors connected in series with the plurality of series-connected non-volatile memory cells, and a second field-effect transistor, wherein the channel of the second field-effect transistor is capacitively coupled to channels of the plurality of series-connected first field-effect transistors. The memory might further include a controller configured to cause the memory to selectively activate a selected non-volatile memory cell, activate each remaining non-volatile memory cell, increase a voltage level of the respective channel of each first field-effect transistor, selectively discharge the voltage level of the respective channel of each first field-effect transistor through the selected non-volatile memory cell, and determine whether the second field-effect transistor is activated in response to a remaining voltage level of the respective channel of each first field-effect transistor.