摘要:
The invention provides a test circuit for n input/output arrays. Each of the n input/output arrays has M pairs of input/output. The test circuit includes M write drivers and M comparing circuits. The ith write driver provides an ith test signal to the ith inputs of all of the n input/output arrays, and 1≦i≦M. The jth comparing circuit determines if jth output signals of all of the n input/output arrays are the same, and outputs a jth comparing result correspondingly, and 1≦j≦M. The invention also provides a method of testing n input/output arrays. The invention also provides a storage device.
摘要:
An adaptive equalizer apparatus with digital eye-opening monitor unit and the method thereof are provided. The apparatus comprises an equalizer unit, a sampling unit, and an eye-opening monitor unit. The equalizer unit equalizes a first signal to a second signal. The sampling unit over-samples the second signal and determines the logic status of the second signal according to the sampling data. The eye-opening monitor unit processes the sampling data and outputs a detecting signal according to the processing result. The detecting signal represents the adequacy of the parameters of the equalizer unit, and the equalizer unit determines whether to change its parameters according to the detecting signal.
摘要:
A voltage regulator as a stable power supply to internal circuits in a semiconductor memory device is provided. This regulator includes a comparing unit, a first driver transistor, a feedback unit, an auxiliary control unit, a first switch, a second switch, and a second driver transistor. The comparing unit compares a reference voltage with a feedback signal to control the first driver transistor and maintain the internal power supply at a stable level. The second driver transistor, controlled by the first and second switches responsive to a trigger signal corresponding abrupt current consumptions and the auxiliary control unit responsive to the comparing result, supplies sufficient and appropriate current to the internal circuits and prevents the internal power supply from excessive overshoot and drop-out.
摘要:
A voltage regulator as a stable power supply to internal circuits in a semiconductor memory device is provided. This regulator includes a comparing unit, a first driver transistor, a feedback unit, an auxiliary control unit, a first switch, a second switch, and a second driver transistor. The comparing unit compares a reference voltage with a feedback signal to control the first driver transistor and maintain the internal power supply at a stable level. The second driver transistor, controlled by the first and second switches responsive to a trigger signal corresponding abrupt current consumptions and the auxiliary control unit responsive to the comparing result, supplies sufficient and appropriate current to the internal circuits and prevents the internal power supply from excessive overshoot and drop-out.
摘要:
A memory device and a method for burn-in test are described. The memory device has a plurality of sub-array word line leak-current limited units and a plurality of single word line leak-current limited units. They are used to limit the current in each word line to a predetermined word line current value. In burn-in test mode, the output of a word line driver is kept in a high impedance state. The bit line stress voltage is applied to the row of memory cells through a normal read-write path. A voltage generator for generating a substantially stable voltage is also provided. In burn-in test mode, the even word lines and the odd word lines are grouped separately and the word line stress voltage is applied to the even word lines and to the odd word lines alternately.
摘要:
A boost circuit for driving word lines in a memory device, comprises: a delaying module for delaying signal to turn on a refresh cycle of the boost circuit; a precharge timing controlling module for controlling the timing of the refresh cycle, wherein the delay module transmitting the signal to the precharge timing controlling module for disabling and enabling the precharge timing controlling module; a precharge module for supplying charge to a first capacitor and a second capacitor, wherein the precharge module is controlled by the precharge timing controlling module; a first capacitor connected to the precharge module and charge the word lines for storing charges; when the precharge module stops to charge the first capacitor, the first capacitor starts to charge the word lines in 2k refresh mode and charge both of the word lines and the second capacitor in 4k refresh mode of the memory device; a second capacitor connected to the precharge module and charge the word lines for storing charges, wherein the second capacitor is connected to a controlling module for deciding to turn on the second capacitor, when the precharge module stops to charge the second capacitor, the second capacitor starts to charge the word lines in 2k refresh mode, but in 4k refresh mode of the memory device the first capacitor starts to charge the second capacitor and the word lines together.
摘要:
The invention provides a test circuit for n input/output arrays. Each of the n input/output arrays has M pairs of input/output. The test circuit includes M write drivers and M comparing circuits. The ith write driver provides an ith test signal to the ith inputs of all of the n input/output arrays, and 1≦i≦M. The jth comparing circuit determines if jth output signals of all of the n input/output arrays are the same, and outputs a jth comparing result correspondingly, and 1≦j≦M. The invention also provides a method of testing n input/output arrays. The invention also provides a storage device.
摘要:
A dynamic RAM which includes a first inverter, a second inverter, a sense amplifier, a first pair of switches, a pair of bit lines, and a dynamic RAM cell. The first inverter receives a first driving signal. A power end of the first inverter is coupled to a first voltage source. The second inverter receives a second driving signal output from the first inverter. A power end of the second inverter is coupled to a second voltage source. The sense amplifier senses and amplifies a voltage difference between a first sensing signal and a second sensing signal. A power end of the sense amplifier is coupled to a third voltage source, wherein a voltage value of the second voltage source is between a voltage value of the first voltage source and a voltage value of the third voltage source.
摘要:
A memory device is provided. The memory device includes a plurality of memory array banks, a bus, a data buffer, and four data paths. The data buffer provides data from the memory array banks to an external node. The first data path includes a first compression module for compressing the data from the memory array banks to the bus. The second data path transmits the data from the memory array banks to the bus. The third data path includes a second compression module for compressing data from the bus to the data buffer. The fourth data path transmits the data from the bus to the data buffer.
摘要:
An adaptive equalization apparatus is provided. The adaptive equalization apparatus includes an equalizer, a monitor circuit, and a control circuit. The equalizer receives a first signal, and equalizes the first signal according to an equalization parameter setting to thereby generate a second signal. The monitor circuit is electrically connected to the equalizer, and monitors edges of the second signal in a real-time manner to thereby generate a detection result. The control logic is electrically connected to the equalizer, and adaptively adjusts the equalization parameter setting according to the detection result.