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公开(公告)号：US20220199557A1
公开(公告)日：2022-06-23
申请号：US17548679
申请日：2021-12-13
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shunji YOSHIMI , Satoshi GOTO , Mikiko FUKASAWA
IPC: H01L23/66 , H01L25/065 , H01L23/498 , H03F3/19 , H03F1/02
Abstract: In a semiconductor device, a first member having a first surface includes a plurality of circuit blocks disposed in an inner region of the first surface when the first surface is viewed in plan. The second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes a plurality of first transistors that are connected in parallel to each other and form a first amplifier circuit. A conductive protrusion protrudes from the second member on an opposite side to the first member. The first transistors are disposed in a region not overlapping any of the circuit blocks in the first member in a plan view.
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公开(公告)号：US20230307458A1
公开(公告)日：2023-09-28
申请号：US18325377
申请日：2023-05-30
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Motoji TSUDA , Mikiko FUKASAWA , Satoshi GOTO , Shunji YOSHIMI , Toshiki MATSUI
CPC classification number: H01L27/1207 , H01L24/13 , H01L24/14 , H01L24/16 , H01L2224/13014 , H01L2224/13082 , H01L2224/1403 , H01L2224/14051 , H01L2224/14155 , H01L2224/16225 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/1033
Abstract: An integrated circuit includes a first base that has at least a part formed of a first semiconductor material and that, in plan view, has a central area and a peripheral area surrounding the central area, and a second base that has at least a part formed of a second semiconductor material different from the first semiconductor material and that includes a power amplifier circuit. In plan view, the second base is overlain by the central area, and does not overlap the peripheral area.
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公开(公告)号：US20230299804A1
公开(公告)日：2023-09-21
申请号：US18323626
申请日：2023-05-25
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Motoji TSUDA , Mikiko FUKASAWA , Shunji YOSHIMI , Satoshi GOTO
CPC classification number: H04B1/38 , H01Q1/2283
Abstract: A radio-frequency module includes a module substrate that has a principal surface, an integrated circuit on the principal surface that includes a power amplifier circuit, and an SMD on the principal surface that includes a circuit device directly connected to the power amplifier circuit. The integrated circuit includes a first base that has at least a part formed of a first semiconductor material, and a second base that has at least a part formed of a second semiconductor material and that includes the power amplifier circuit. The first base has two sides that are opposite each other in plan view. The SMD is closer to one side than the other side in plan view. In plan view, the second base is smaller than the first base and is overlain by the first base at a position closer to the one side than to the other side.
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Patent Agency Ranking
公开(公告)号：US20230223969A1
公开(公告)日：2023-07-13
申请号：US18180199
申请日：2023-03-08
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Yukiya YAMAGUCHI , Fumio HARIMA , Takanori UEJIMA , Yuji TAKEMATSU , Shunji YOSHIMI , Satoshi ARAYASHIKI , Mitsunori SAMATA , Satoshi GOTO , Masayuki AOIKE
Abstract: A radio frequency module includes a module substrate including major surfaces that face each other; a first base part that is at least partially comprised of a first semiconductor material and in which an electronic circuit is formed; a second base part that is at least partially comprised of a second semiconductor material having a thermal conductivity lower than the thermal conductivity of the first semiconductor material and in which an amplifier circuit is formed; and an external connection terminal disposed on or over the major surface. The first base part and the second base part are disposed on or over the major surface out of the major surfaces; and the second base part is disposed between the module substrate and the first base part, is joined to the first base part, and is connected to the major surface via an electrode.
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公开(公告)号：US20220200548A1
公开(公告)日：2022-06-23
申请号：US17546831
申请日：2021-12-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Mikiko FUKASAWA , Satoshi GOTO , Shunji YOSHIMI , Yuji TAKEMATSU , Mitsunori SAMATA
Abstract: A second member is joined in surface contact with a first surface of a first member including a semiconductor region made from an elemental semiconductor. The second member includes a radio-frequency amplifier circuit made from a compound semiconductor. A conductive protrusion projects from the second member toward a side opposite to the first member. The first member includes a temperature measurement element that detects a temperature.
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公开(公告)号：US20220199484A1
公开(公告)日：2022-06-23
申请号：US17554043
申请日：2021-12-17
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Mikiko FUKASAWA , Satoshi GOTO , Shunji YOSHIMI
IPC: H01L23/367 , H01L23/66 , H03F3/195
Abstract: In a semiconductor device, when a first surface of a first member is viewed in plan, a plurality of circuit blocks are disposed in an inner region of the first surface. The second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes one or more circuit blocks. A conductive protrusion protrudes from the second member on an opposite side to the first member. One of the circuit blocks in the second member constitutes a first amplifier circuit including a plurality of first transistors that are connected in parallel to each other. At least one of the circuit blocks in the first member overlaps at least one circuit block in the second member in a plan view.
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公开(公告)号：US20220190847A1
公开(公告)日：2022-06-16
申请号：US17546764
申请日：2021-12-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi GOTO , Shunji YOSHIMI , Mitsunori SAMATA
Abstract: A semiconductor device including a radio-frequency amplifier circuit and a band selection switch are mounted on or in a module substrate. An output matching circuit includes at least one passive element disposed on or in the module substrate. The output matching circuit is coupled between the radio-frequency amplifier circuit and the band selection switch. The semiconductor device includes a first member having a semiconductor portion made of an elemental semiconductor and a second member joined to the first member in surface contact with the first member. The radio-frequency amplifier circuit including a semiconductor element made of a compound semiconductor is formed at the second member. The semiconductor device is disposed in close proximity to the output matching circuit in plan view. The output matching circuit is disposed in close proximity to the band selection switch.
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公开(公告)号：US20220109411A1
公开(公告)日：2022-04-07
申请号：US17490798
申请日：2021-09-30
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shunji YOSHIMI , Yuji TAKEMATSU , Yukiya YAMAGUCHI , Takanori UEJIMA , Satoshi GOTO , Satoshi ARAYASHIKI
IPC: H03F3/21 , H01L25/065 , H01L23/538 , H01L29/737 , H01L23/522
Abstract: A semiconductor devices comprises a first member including a first circuit partially formed by an elemental semiconductor element at a surface layer, a first conductive raised portion at the first member, and a second member smaller than the first member in plan view joined to the first member. The second member includes a second circuit partially formed by a compound semiconductor element. A second conductive raised portion is at the second member. A power amplifier includes a first-stage amplifier circuit included in the first or second circuit and a second-stage amplifier circuit included in the second circuit. The first circuit includes a first switch for inputting to the first-stage amplifier circuit a radio-frequency signal inputted to a selected contact, a control circuit to control the first- and second-stage amplifier circuits, and a second switch for outputting from a selected contact a radio-frequency signal outputted by the second-stage amplifier circuit.
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