-
11.发明申请公开(公告)号：US20210323094A1
公开(公告)日：2021-10-21
申请号：US17364657
申请日：2021-06-30
Applicant: NICHIA CORPORATION
Inventor： Naoki EBOSHI , Hiroaki YUTO
IPC: B23K26/364 , B23K26/402 , B23K26/00 , B23K26/08 , B23K26/359 , B23K26/0622 , F21K9/64 , F21K9/90
Abstract: A wavelength conversion member manufacturing method includes: providing the wavelength conversion member having an upper surface, the wavelength conversion member including a phosphor portion, and a light-transmissive portion configured to transmit fluorescence from the phosphor portion; and forming, in the wavelength conversion member, at least one depressed portion each having an inclined surface inclined with respect to the upper surface by irradiating the wavelength conversion member with a pulsed laser beam from above more than once to form a plurality of continuous machining marks at different processing depths.
-
公开(公告)号：US20170284634A1
公开(公告)日：2017-10-05
申请号：US15473524
申请日：2017-03-29
Applicant: NICHIA CORPORATION
Inventor： Seiji KIYOTA , Hiroaki YUTO , Kei ADACHI
CPC classification number: F21V9/30 , F21K9/64 , F21S41/14 , F21S41/16 , F21S43/26 , F21V5/02 , F21V5/04 , F21V11/00 , F21V31/005 , F21Y2115/30 , H01S5/005 , H01S5/02216 , H01S5/0222 , H01S5/0224 , H01S5/02292 , H01S5/02296 , H01S5/32341
Abstract: A light emitting device includes: a base member; a laser element disposed on or above a mounting surface of the base member; a fluorescent member including a first main surface and a second main surface respectively positioned on opposite sides of the fluorescent member, the second main surface being fixed to the mounting surface of the base member; a first optical member configured to change a traveling direction of laser light emitted by the laser element to be directed toward the first main surface of the fluorescent member; and a lid connected to the base member and enclosing the laser element, the fluorescent member, and the first optical member in a space beneath the lid, the lid being configured to transmit light from the fluorescent member.
-
13.发明申请SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF, AND SUBMOUNT MANUFACTURING METHOD 审中-公开半导体激光器件及其制造方法及其制造方法公开(公告)号：US20160181760A1
公开(公告)日：2016-06-23
申请号：US15057770
申请日：2016-03-01
Applicant: NICHIA CORPORATION
Inventor： Hiroki SAKATA , Hiroaki YUTO , Eiichiro OKAHISA , Kazuma KOZURU
CPC classification number: H01S5/02469 , H01L2224/48091 , H01L2924/12044 , H01S5/02212 , H01S5/02236 , H01S5/02256 , H01S5/02276 , H01S5/02476 , H01S5/32341 , H01L2924/00014 , H01L2924/00
Abstract: A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes.
Abstract translation: 半导体激光器件可以包括具有第一表面，第二表面和在第一表面和第二表面中具有开口的微管的绝缘单晶SiC。 可以在单晶SiC的第一表面的一侧设置导电性基材，并且可以在单晶SiC的第二面的一侧设置半导体激光元件。 可以在微管中形成绝缘构件。
-
14.发明申请公开(公告)号：US20140321491A1
公开(公告)日：2014-10-30
申请号：US14261520
申请日：2014-04-25
Applicant: NICHIA CORPORATION
Inventor： Hiroki SAKATA , Hiroaki YUTO , Eiichiro OKAHISA , Kazuma KOZURU
IPC: H01S5/02
CPC classification number: H01S5/02469 , H01L2224/48091 , H01L2924/12044 , H01S5/02212 , H01S5/02236 , H01S5/02256 , H01S5/02276 , H01S5/02476 , H01S5/32341 , H01L2924/00014 , H01L2924/00
Abstract: A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes.
Abstract translation: 半导体激光器件可以包括具有第一表面，第二表面和在第一表面和第二表面中具有开口的微管的绝缘单晶SiC。 可以在单晶SiC的第一表面的一侧设置导电性基材，并且可以在单晶SiC的第二面的一侧设置半导体激光元件。 可以在微管中形成绝缘构件。
-
-
-
Search Results
14
records
(took 0.013 seconds)
