Image sensor and image capturing device

    公开(公告)号:US11557624B2

    公开(公告)日:2023-01-17

    申请号:US16953525

    申请日:2020-11-20

    申请人: NIKON CORPORATION

    发明人: Shigeru Matsumoto

    摘要: An image sensor includes: a pixel substrate that includes a plurality of pixels each having a photoelectric conversion unit that generates an electric charge through photoelectric conversion executed on light having entered therein and an output unit that generates a signal based upon the electric charge and outputs the signal; and an arithmetic operation substrate that is laminated on the pixel substrate and includes an operation unit that generates a corrected signal by using a reset signal generated after the electric charge in the output unit is reset and a photoelectric conversion signal generated based upon an electric charge generated in the photoelectric conversion unit and executes an arithmetic operation by using corrected signals each generated in correspondence to one of the pixels.

    Image sensor and electronic camera
    12.
    发明授权

    公开(公告)号:US11418731B2

    公开(公告)日:2022-08-16

    申请号:US16475329

    申请日:2018-01-31

    申请人: NIKON CORPORATION

    发明人: Shigeru Matsumoto

    IPC分类号: H04N5/347 H04N5/369

    摘要: An image sensor includes a pixel, the pixel has: a first photoelectric conversion unit and a second photoelectric conversion unit that photoelectrically convert light to generate a charge; an accumulation unit that accumulates at least one of the charge generated by the first photoelectric conversion unit and the charge generated by the second photoelectric conversion unit; a first output unit and a second output unit that output a signal based on the charge accumulated in the accumulation unit; and an adjustment unit that adjusts a capacitance of the accumulation unit if a signal based on the charges generated by the first photoelectric conversion unit and the second photoelectric conversion unit is output from the first output unit.

    FEATURE EXTRACTION ELEMENT, FEATURE EXTRACTION SYSTEM, AND DETERMINATION APPARATUS

    公开(公告)号:US20190034748A1

    公开(公告)日:2019-01-31

    申请号:US16145875

    申请日:2018-09-28

    申请人: NIKON CORPORATION

    摘要: A feature extracting element including: a light-receiving substrate where a plurality of light-receiving elements for photoelectrically converting received light are two-dimensionally arrayed; and one or more other substrates that are laminated on the light-receiving substrate, wherein the other substrate has: a convolution processor which has a plurality of multiplying circuits that are correspondingly provided per the light-receiving element or per a block that is configured of a plurality of the light-receiving elements, and performs convolution operation on signals that are output from the plurality of light-receiving elements using the plurality of multiplying circuits; a pooling processing unit to sample a signal that is output from the convolution processor, based on a predetermined condition; and a connection wiring to pass the sampled signal to the plurality of multiplying circuits.

    Image sensor and imaging device
    14.
    发明授权

    公开(公告)号:US11889214B2

    公开(公告)日:2024-01-30

    申请号:US17043160

    申请日:2019-03-29

    申请人: NIKON CORPORATION

    摘要: An image sensor, includes: a first pixel and a second pixel, in a first direction, each including a first photoelectric conversion unit and a light-shielding unit and outputting a signal; a third pixel and a fourth pixel, in the first direction, each including a second photoelectric conversion unit and outputting a signal; a first signal line and a second signal line, in the first direction, each of which can be connected to the first pixel, the second pixel, the third pixel and the fourth pixel; and a control unit that performs a first control in which a signal of the first pixel is output to the first signal line and a signal of the second pixel is output to the second signal line, and a second control in which a signal of the third pixel and a signal of the fourth pixel are output to the first signal line.

    Image sensor and image-capturing device including adjustment unit for reducing capacitance

    公开(公告)号:US11108978B2

    公开(公告)日:2021-08-31

    申请号:US16475261

    申请日:2018-01-31

    申请人: NIKON CORPORATION

    发明人: Shigeru Matsumoto

    IPC分类号: H04N5/335 H04N5/347 H04N5/378

    摘要: An image sensor includes: a first pixel having a first photoelectric conversion unit that photoelectrically converts light to generate a charge, a first accumulation unit that accumulates the charge generated by the first photoelectric conversion unit, and a first output unit that is connected to the first accumulation unit; a second pixel having a second photoelectric conversion unit that photoelectrically converts light to generate a charge, a second accumulation unit that accumulates the charge generated by the second photoelectric conversion unit, and a second output unit that is connected to and disconnected from the second accumulation unit via a second connection unit; and an adjustment unit that adjusts capacitances of the first accumulation unit and the second accumulation unit if a signal based on the charges generated by the first photoelectric conversion unit and the second photoelectric conversion unit is output from the first output unit.

    Image sensor and image capture device

    公开(公告)号:US10720465B2

    公开(公告)日:2020-07-21

    申请号:US16084908

    申请日:2017-02-28

    申请人: NIKON CORPORATION

    摘要: A first circuit layer including a first semiconductor substrate with photoelectric conversion unit that photoelectrically converts incident light and generates charge, and a first wiring layer with wiring that reads out signal based upon charge generated by the photoelectric conversion unit; second circuit layer including a second wiring layer with wiring connected to the wiring of the first wiring layer, and a second semiconductor substrate with a through electrode connected to the wiring of the second wiring layer; third circuit layer including a third semiconductor substrate with a through electrode connected to the through electrode of the second circuit layer, and third wiring layer with wiring connected to the through electrode of the third semiconductor substrate; and a fourth circuit layer including a fourth wiring layer with wiring connected to the wiring of the third wiring layer, and fourth semiconductor substrate connected to the wiring of the fourth wiring layer.