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18 条记录 (耗时 0.021 秒)

    Image sensor and image capture device
    2.
    发明授权
    Image sensor and image capture device 有权

    公开(公告)号：US11152420B2

    公开(公告)日：2021-10-19

    申请号：US16861592

    申请日：2020-04-29

    申请人： NIKON CORPORATION

    发明人： Shigeru Matsumoto ,  Toru Takagi

    IPC分类号： H01L27/146 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/369 ,  H04N5/378

    摘要： A first circuit layer including a first semiconductor substrate with photoelectric conversion unit that photoelectrically converts incident light and generates charge, and a first wiring layer with wiring that reads out signal based upon charge generated by the photoelectric conversion unit; second circuit layer including a second wiring layer with wiring connected to the wiring of the first wiring layer, and a second semiconductor substrate with a through electrode connected to the wiring of the second wiring layer; third circuit layer including a third semiconductor substrate with a through electrode connected to the through electrode of the second circuit layer, and third wiring layer with wiring connected to the through electrode of the third semiconductor substrate; and a fourth circuit layer including a fourth wiring layer with wiring connected to the wiring of the third wiring layer, and fourth semiconductor substrate connected to the wiring of the fourth wiring layer.

    Imaging element and imaging device with comparison units for comparing photoelectric signals with a reference signal
    4.
    发明授权
    Imaging element and imaging device with comparison units for comparing photoelectric signals with a reference signal 有权

    公开(公告)号：US12010445B2

    公开(公告)日：2024-06-11

    申请号：US17442911

    申请日：2020-03-27

    申请人： NIKON CORPORATION

    发明人： Shigeru Matsumoto

    IPC分类号： H04N25/75 ,  H04N25/704

    CPC分类号： H04N25/75 ,  H04N25/704

    摘要： An imaging element includes a first photoelectric conversion unit and a second photoelectric conversion unit that generates electric charges by photoelectric conversion, a first comparison unit that outputs a first signal based on a result of comparing a signal based on electric charges generated by the first photoelectric conversion unit and a reference signal, a first storage unit that stores a signal based on the first signal that is output by the first comparison unit, a second comparison unit that outputs a second signal based on a result of comparing a signal based on electric charges generated by the second photoelectric conversion unit and a reference signal, a second storage unit that stores a signal based on the second signal that is output from the second comparison unit, and a connection unit that connects or disconnect the first comparison unit and the second storage unit.

    Image sensor and image-capturing apparatus
    5.
    发明授权
    Image sensor and image-capturing apparatus 有权

    公开(公告)号：US10998367B2

    公开(公告)日：2021-05-04

    申请号：US16082901

    申请日：2017-02-27

    申请人： NIKON CORPORATION

    发明人： Shigeru Matsumoto

    IPC分类号： H04N5/378 ,  H01L27/146 ,  H03M1/56 ,  H04N5/369 ,  H01L23/48 ,  H04N5/3745 ,  H04N5/374

    摘要： An image sensor includes a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge; and an AD conversion unit having a comparison unit that compares a signal caused by an electric charge generated by the photoelectric conversion unit with a reference signal, a first storage unit in a first circuit layer, the first storage unit storing a first signal based on a signal output from the comparison unit, and a second storage unit in a second circuit layer that is stacked on the first circuit layer, the second storage unit storing a second signal based on the signal output from the comparison unit.

    Image sensor and image capture device
    6.
    发明授权
    Image sensor and image capture device 有权

    公开(公告)号：US10680031B2

    公开(公告)日：2020-06-09

    申请号：US16084908

    申请日：2017-02-28

    申请人： NIKON CORPORATION

    发明人： Shigeru Matsumoto ,  Toru Takagi

    IPC分类号： H01L27/146 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/369 ,  H04N5/378

    摘要： A first circuit layer including a first semiconductor substrate with photoelectric conversion unit that photoelectrically converts incident light and generates charge, and a first wiring layer with wiring that reads out signal based upon charge generated by the photoelectric conversion unit; second circuit layer including a second wiring layer with wiring connected to the wiring of the first wiring layer, and a second semiconductor substrate with a through electrode connected to the wiring of the second wiring layer; third circuit layer including a third semiconductor substrate with a through electrode connected to the through electrode of the second circuit layer, and third wiring layer with wiring connected to the through electrode of the third semiconductor substrate; and a fourth circuit layer including a fourth wiring layer with wiring connected to the wiring of the third wiring layer, and fourth semiconductor substrate connected to the wiring of the fourth wiring layer.

    Image sensor and image-capturing device including adjustment unit for reducing capacitance
    7.
    发明授权
    Image sensor and image-capturing device including adjustment unit for reducing capacitance 有权

    公开(公告)号：US11917310B2

    公开(公告)日：2024-02-27

    申请号：US17381444

    申请日：2021-07-21

    申请人： NIKON CORPORATION

    发明人： Shigeru Matsumoto

    IPC分类号： H04N25/46 ,  H04N25/75

    CPC分类号： H04N25/46 ,  H04N25/75

    摘要： An image sensor includes: a first pixel having a first photoelectric conversion unit that photoelectrically converts light to generate a charge, a first accumulation unit that accumulates the charge generated by the first photoelectric conversion unit, and a first output unit that is connected to the first accumulation unit; a second pixel having a second photoelectric conversion unit that photoelectrically converts light to generate a charge, a second accumulation unit that accumulates the charge generated by the second photoelectric conversion unit, and a second output unit that is connected to and disconnected from the second accumulation unit via a second connection unit; and an adjustment unit that adjusts capacitances of the first accumulation unit and the second accumulation unit if a signal based on the charges generated by the first photoelectric conversion unit and the second photoelectric conversion unit is output from the first output unit.

    Image sensor and image capture device
    9.
    发明授权
    Image sensor and image capture device 有权

    公开(公告)号：US11177312B2

    公开(公告)日：2021-11-16

    申请号：US16861592

    申请日：2020-04-29

    申请人： NIKON CORPORATION

    发明人： Shigeru Matsumoto ,  Toru Takagi

    IPC分类号： H01L27/146 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/369 ,  H04N5/378

    摘要： A first circuit layer including a first semiconductor substrate with photoelectric conversion unit that photoelectrically converts incident light and generates charge, and a first wiring layer with wiring that reads out signal based upon charge generated by the photoelectric conversion unit; second circuit layer including a second wiring layer with wiring connected to the wiring of the first wiring layer, and a second semiconductor substrate with a through electrode connected to the wiring of the second wiring layer; third circuit layer including a third semiconductor substrate with a through electrode connected to the through electrode of the second circuit layer, and third wiring layer with wiring connected to the through electrode of the third semiconductor substrate; and a fourth circuit layer including a fourth wiring layer with wiring connected to the wiring of the third wiring layer, and fourth semiconductor substrate connected to the wiring of the fourth wiring layer.