公开(公告)号：US20060188750A1

公开(公告)日：2006-08-24

申请号：US11352958

申请日：2006-02-13

申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

IPC分类号： C23C14/00 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01L43/10 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/025 ,  C23C14/165 ,  C23C14/584 ,  G11B5/3903 ,  H01F10/1936 ,  H01F10/3268 ,  H01F41/302 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/1193

摘要： A magnetic sensing element which allows a high reproduction output and reduction in asymmetry of reproduction waveform to become mutually compatible, as well as a method for manufacturing the same, is provided. In the inside of a second pinned magnetic layer and a free magnetic layer, the atomic percentage of an element Z is decreased in a region close to a non-magnetic material layer. Consequently, the ferromagnetic coupling magnetic field due to magnetostatic coupling (topological coupling) between the pinned magnetic layer and the free magnetic layer can be reduced. At the same time, in a region at a distance from the non-magnetic material layer, the atomic percentage of an element Z is increased, a spin-dependent bulk scattering coefficient is increased, and a product of the amount of change in magnetic resistance and the element area of the magnetic sensing element can be maintained at a high level.

公开(公告)号：US20050280958A1

公开(公告)日：2005-12-22

申请号：US11155289

申请日：2005-06-17

申请人： Masamichi Saito ,  Naoya Hasegawa ,  Yosuke Ide ,  Masahiko Ishizone

发明人： Masamichi Saito ,  Naoya Hasegawa ,  Yosuke Ide ,  Masahiko Ishizone

IPC分类号： G11B5/127 ,  G11B5/265 ,  G11B5/33

CPC分类号： G11B5/265 ,  G11B5/127

摘要： In a magnetic sensing element, the amounts of spin-dependent bulk scattering in the upstream part of a multilayer film and in the downstream part of the multilayer film are controlled to be asymmetric. Thus, a value ΔR×A, which represents the variation in magnetoresistance×element area, for the upstream part of the multilayer film is controlled so as to be smaller than the value ΔR×A for the downstream part of the multilayer film.

摘要翻译： 在磁传感元件中，多层膜的上游部分和多层膜的下游部分中的自旋依赖性体散射量被控制为不对称。 因此，对于多层膜的上游部分，表示代表磁阻效应区域的变化的值ΔRxA被控制为小于多层膜的下游部分的值ΔRxA。

公开(公告)号：US07961442B2

公开(公告)日：2011-06-14

申请号：US11947315

申请日：2007-11-29

申请人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

发明人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

IPC分类号： G11B5/39

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/0005 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/31678

摘要： A tunneling magnetic detecting element includes an insulating barrier layer having a layered structure including a Ti—O sublayer and a Ta—O sublayer. The Ta concentration in the insulating barrier layer is set to be more than 0 at % but not more than about 7 at % with respect to a total of 100 at % of Ti and Ta constituting the insulating barrier layer.

摘要翻译： 隧道磁检测元件包括具有包括Ti-O子层和Ta-O子层的层状结构的绝缘阻挡层。 绝缘阻挡层中的Ta浓度相对于构成绝缘阻挡层的Ti和Ta的总和为100at％，设定为大于0at％但不大于约7at％。

公开(公告)号：US07916436B2

公开(公告)日：2011-03-29

申请号：US11890086

申请日：2007-08-03

申请人： Masahiko Ishizone ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Kazumasa Nishimura

发明人： Masahiko Ishizone ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Kazumasa Nishimura

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3277 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/08

摘要： A tunneling magnetic sensor includes a platinum layer between a pinned magnetic layer and an insulating barrier layer. The platinum layer can probably vary the barrier height (potential height) and barrier width (potential width) of the insulating barrier layer to reduce the absolute value of VCR, thus providing higher operating stability than known tunneling magnetic sensors. In addition, the insulating barrier layer can achieve increased flatness at its bottom interface (where the insulating barrier layer starts to be formed). The tunneling magnetic sensor can therefore provide a higher rate of resistance change (ΔR/R) at low RA than known tunneling magnetic sensors.

摘要翻译： 隧道磁传感器包括在钉扎磁性层和绝缘阻挡层之间的铂层。 铂层可能改变绝缘阻挡层的势垒高度（势高）和势垒宽度（电位宽度），以降低VCR的绝对值，从而提供比已知的隧道磁传感器更高的操作稳定性。 此外，绝缘阻挡层可以在其底部界面（其中开始形成绝缘阻挡层）时实现增加的平坦度。 因此，隧道磁传感器可以在低RA处提供比已知的隧道磁传感器更高的电阻变化率（＆Dgr; R / R）。

公开(公告)号：US07738218B2

公开(公告)日：2010-06-15

申请号：US11436270

申请日：2006-05-17

申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

IPC分类号： G11B5/127

CPC分类号： G11B5/3906 ,  B82Y40/00 ,  G01R33/093 ,  H01F10/3263 ,  H01F10/3281 ,  H01F41/302 ,  H01L43/10

摘要： A magnetic detection element capable of maintaining the ΔRA at a high level and reducing the magnetostriction by improving a material for a free magnetic layer, as well as a method for manufacturing the same, is provided. The free magnetic layer includes a laminate composed of a CoMnX alloy layer formed from a metal compound represented by a compositional formula CoaMnbXc (where X represents at least one of Ge, Ga, In, Si, Pb, Zn, and Sb and a+b+c=100 atomic percent) and a CoMnZ alloy layer formed from a metal compound represented by a compositional formula CodMneZf (where Z represents at least one of Sn and Al and d+e+f=100 atomic percent). In this manner, the magnetostriction of the free magnetic layer can be reduced.

摘要翻译： 提供了能够通过改善自由磁性层的材料而将高分辨率RA维持并减小磁致伸缩的磁性检测元件及其制造方法。 自由磁性层包括由由组成式CoaMnbXc表示的金属化合物形成的CoMnX合金层（其中X表示Ge，Ga，In，Si，Pb，Zn和Sb中至少一种）和a + b + c = 100原子％）和由组成式CodMneZf（Z表示Sn和Al中的至少一种，d + e + f = 100原子％）表示的金属化合物形成的CoMnZ合金层。 以这种方式，可以减小自由磁性层的磁致伸缩。

公开(公告)号：US20080186639A1

公开(公告)日：2008-08-07

申请号：US12026985

申请日：2008-02-06

申请人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

发明人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

IPC分类号： G11B5/127

CPC分类号： G11B5/3163 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3295 ,  H01F41/32 ,  H01L43/08

摘要： A tunneling magnetic sensing element includes a pinned magnetic layer with a magnetization direction that is pinned in one direction, an insulating barrier layer, and a free magnetic layer with a magnetization direction that varies in response to an external magnetic field. The insulating barrier layer comprises magnesium (Mg), and a first protective layer composed of Mg is disposed on the free magnetic layer.

摘要翻译： 隧道磁感应元件包括具有沿一个方向固定的磁化方向的钉扎磁性层，绝缘阻挡层和具有响应于外部磁场而变化的磁化方向的自由磁性层。 绝缘阻挡层包括镁（Mg），并且由自由磁性层上设置由Mg构成的第一保护层。

公开(公告)号：US20080182111A1

公开(公告)日：2008-07-31

申请号：US11947315

申请日：2007-11-29

申请人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

发明人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

IPC分类号： H01F1/00 ,  H01F41/14

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/0005 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/31678

摘要： A tunneling magnetic detecting element includes an insulating barrier layer having a layered structure including a Ti—O sublayer and a Ta—O sublayer. The Ta concentration in the insulating barrier layer is set to be more than 0 at % but not more than about 7 at % with respect to a total of 100 at % of Ti and Ta constituting the insulating barrier layer.

摘要翻译： 隧道磁检测元件包括具有包括Ti-O子层和Ta-O子层的层状结构的绝缘阻挡层。 绝缘阻挡层中的Ta浓度相对于构成绝缘阻挡层的Ti和Ta的总和为100at％，设定为大于0at％但不大于约7at％。

公开(公告)号：US20080074804A1

公开(公告)日：2008-03-27

申请号：US11851570

申请日：2007-09-07

申请人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone ,  Ryo Nakabayashi ,  Naoya Hasegawa

发明人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone ,  Ryo Nakabayashi ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3163 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/16 ,  H01F10/3254 ,  H01F10/3295 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12

摘要： A tunneling magnetic sensing element including an Mg—O insulating barrier which can maintain favorable soft-magnetic properties of a free magnetic layer and can have a high resistance change ratio (ΔR/R) compared to known tunnel magnetic sensing elements is disclosed, and a method of manufacturing such a tunneling magnetic sensing element is also discloded. An enhance layer (second magnetic layer) composed of Co100-XFeX having a Fe composition ratio X of about 30 to 100 at % is disposed on the Mg—O insulating barrier. With this, the magnetostriction λ of the free magnetic layer can be reduced and the resistance change ratio (ΔR/R) can be increased.

摘要翻译： 公开了一种隧道磁传感元件，其包括可以保持自由磁性层的有利的软磁性质并且可以具有与已知的隧道磁传感元件相比高的电阻变化率（DeltaR / R）的Mg-O绝缘屏障，并且 制造这种隧道磁传感元件的方法也被剥离。 由Fe组成比X为约30〜100原子％的由Co-100-X-Fe x X组成的增强层（第二磁性层）设置在Mg-O 绝缘屏障。 由此，可以减小自由磁性层的磁致伸缩λ，并且可以增加电阻变化率（DeltaR / R）。

公开(公告)号：US20060250727A1

公开(公告)日：2006-11-09

申请号：US11414978

申请日：2006-05-01

申请人： Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

发明人： Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  H01L43/10

摘要： A magnetic sensing element exhibiting a large ΔRA is provided, in which a free magnetic layer has a small coercive force Hc and a small magnetostriction constant λs. The free magnetic layer includes a Co2MnZ alloy layer (where Z may represent at least one element selected from the group consisting of Al, Sn, In, Sb, Ga, Si, Ge, Pb, and Zn) and a (NiaFe100-a)bX100-b alloy layer (where X may represent at least one element selected from the group consisting of Cu, Au, Ag, Zn, Mn, Al, Cd, Zr, and Hf, a may represent a composition ratio satisfying 80

公开(公告)号：US20060215330A1

公开(公告)日：2006-09-28

申请号：US11386206

申请日：2006-03-22

申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

摘要： A magnetic sensing element is described, including a multilayer film including a pinned magnetic layer, a free magnetic layer disposed on the pinned magnetic layer with a nonmagnetic layer therebetween, wherein a current flows perpendicular to the surfaces of the individual layers of the multilayer film. The nonmagnetic layer is composed of Cu and has a face-centered cubic lattice crystal structure in which the {111} planes are preferentially oriented in a direction parallel to the surfaces of the layer. At least one of the pinned magnetic layer and the free magnetic layer includes a Co2Mn(Ge1-xSnx) alloy layer, the subscript x satisfying the range of 0.2≦x≦0.8; and the Co2Mn(Ge1-xSnx) alloy layer has a body-centered cubic lattice crystal structure in which the {110} planes are preferentially oriented in a direction parallel to the surfaces of the layer.

摘要翻译： 描述了一种磁感测元件，其包括多层膜，其包括被钉扎的磁性层，在其上具有非磁性层的被钉扎的磁性层上设置的自由磁性层，其中电流垂直于多层膜的各个层的表面流动。 非磁性层由Cu构成，并且具有面心立方晶格结构，其中{111}面优先在与层的表面平行的方向上取向。 被钉扎的磁性层和自由磁性层中的至少一个包括Co 2 Mn（Ge 1-x Sn 2 x Sn）合金层， 下标x满足0.2 <= x <= 0.8的范围; 而Mn 2 Mn（Ge 1-x Sn 2 x Sn）合金层具有体心立方晶格结构，其中{110 }平面优先在平行于该层的表面的方向上取向。