公开(公告)号：US5065404A

公开(公告)日：1991-11-12

申请号：US551996

申请日：1990-07-12

申请人： Masaki Okajima ,  Genichi Hatakoshi ,  Masayuki Ishikawa ,  Yutaka Uematsu ,  Nawoto Motegi

发明人： Masaki Okajima ,  Genichi Hatakoshi ,  Masayuki Ishikawa ,  Yutaka Uematsu ,  Nawoto Motegi

IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/2231 ,  H01S5/204 ,  H01S5/221 ,  H01S5/3211 ,  H01S5/32308 ,  H01S5/32325

摘要： A visible-light wavelength continuous oscillation laser is disclosed which has an N type GaAs substrate, an N type GaAlAs cladding layer formed on the substrate, and a non-doped GaAlAs active layer formed on the cladding layer. The laser further includes two N type GaAlAs layers, a P type GaAlAs optical guide layer, a P type cladding layer consisting of upper and lower portions, and a ridge section. The N type GaAlAs layers contact both sides of the ridge section. The optical guide layer is sandwiched between the upper and lower portions of the P type cladding layer, is located within the ridge section, and has a refractive index greater than that of the P type cladding layer. The distance between the active layer and the optical guide layer does not depend on the condition in which etching is performed to form the ridge section, but depends basically on the time required to grow crystal.

公开(公告)号：US5406574A

公开(公告)日：1995-04-11

申请号：US165909

申请日：1993-12-14

申请人： John Rennie ,  Masaki Okajima ,  Genichi Hatakoshi

发明人： John Rennie ,  Masaki Okajima ,  Genichi Hatakoshi

IPC分类号： H01S5/20 ,  H01S5/223 ,  H01S5/347 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/2013 ,  H01S5/2231 ,  H01S5/347

摘要： A semiconductor laser device includes a substrate, a first cladding layer formed on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed on the active layer having a conductivity type different from that of the first cladding layer, wherein at least one of the first and second cladding layers has a multiquantum barrier structure. The width of the first quantum barrier of the multiquantum barrier structure relative to the side of the active layer is 24 to 100 nm, the width of the second quantum barrier of the multiquantum barrier structure relative to the side of the active layer is 5 to 20 nm, and the multiquantum barrier structure is constituted by alternately stacking first thin layers consisting of In.sub.z (Ga.sub.1-x Al.sub.x).sub.1-z P (x is 0.7 to 1.0 and z is 0 to 1.0) and second thin layers consisting of In.sub.z (Ga.sub.1-y Al.sub.y).sub.1-z P (y is 0 to 0.3 and z is 0 to 1.0).

摘要翻译： 半导体激光装置包括基板，形成在基板上的第一包覆层，形成在第一包层上的有源层和形成在有源层上的与第一包层不同的导电类型的第二包层， 其中所述第一和第二包覆层中的至少一个具有多量壁垒结构。 多量子势垒结构相对于有源层侧面的第一量子势垒的宽度为24〜100nm，多量子势垒结构的第二量子势垒相对于有源层侧的宽度为5〜20 nm，并且多量阻挡结构通过交替堆叠由Inz（Ga1-xAlx）1-zP（x为0.7〜1.0，z为0〜1.0）构成的第一薄层和由Inz（Ga1-yAly）构成的第二薄层 ）1-zP（y为0〜0.3，z为0〜1.0）。

公开(公告)号：US5305341A

公开(公告)日：1994-04-19

申请号：US836763

申请日：1992-02-19

申请人： Yukie Nishikawa ,  Koichi Nitta ,  Genichi Hatakoshi ,  Masaki Okajima ,  Minoru Watanabe ,  Kazuhiko Itaya

发明人： Yukie Nishikawa ,  Koichi Nitta ,  Genichi Hatakoshi ,  Masaki Okajima ,  Minoru Watanabe ,  Kazuhiko Itaya

IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01L33/30 ,  H01L33/0062 ,  H01S5/2231 ,  H01S5/32325 ,  H01S5/2201 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/2219 ,  H01S5/223 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/3207 ,  H01S5/3211

摘要： According to this invention, in a semiconductor laser, an n-type InGaAlP cladding layer, an InGaP active layer, and a p-type InGaAlP cladding layer are sequentially grown on an n-type GaAs substrate to form a double hetero structure. The active layer is constituted by an ordered structure having regularity in the directions, and the p-type cladding layer is constituted by a disordered structure. Band discontinuity in conduction band between the active layer and the p-type cladding layer is increased to improve the temperature characteristics of the laser.

摘要翻译： 根据本发明，在半导体激光器中，在n型GaAs衬底上依次生长n型InGaAlP包覆层，InGaP有源层和p型InGaAlP包层，以形成双异质结构。 有源层由沿<111>方向规则性的有序结构构成，p型覆层由无序结构构成。 有源层和p型覆层之间导带的带不连续性增加，以提高激光器的温度特性。

公开(公告)号：US5058120A

公开(公告)日：1991-10-15

申请号：US634546

申请日：1990-12-27

申请人： Koichi Nitta ,  Yukio Watanabe ,  Yukie Nishikawa ,  Masaki Okajima ,  Genichi Hatakoshi

发明人： Koichi Nitta ,  Yukio Watanabe ,  Yukie Nishikawa ,  Masaki Okajima ,  Genichi Hatakoshi

IPC分类号： H01S5/223 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/2231 ,  H01S5/321 ,  H01S5/32325

摘要： A visible light emitting semiconductor laser has a double-heterostructure section above the N-type GaAs substrate, which is composed of a nondoped InGaP active layer sandwiched between an N type InGaAlP cladding layer and a P type InGaAlP cladding layer. A P type InGaP thin-film layer formed on the P type cladding layer functions as an etching stopper. Formed sequentially on the etching stopper layer are a P type cladding layer and an N type GaAs current-blocking layer, which have a stripe-shaped groove section in and around their central portion. The groove section has an opening at the top and the bottom portion narrower than the opening, presenting an inverse-trapezoidal cross-sectional profile. This arrangement makes the width of the optical confinement region of the semiconductor laser narrower than that of the current injection region.

公开(公告)号：US5377291A

公开(公告)日：1994-12-27

申请号：US451234

申请日：1989-12-15

申请人： Genichi Hatakoshi ,  Masaki Okajima ,  Kazutaka Terashima ,  Yutaka Uematsu

发明人： Genichi Hatakoshi ,  Masaki Okajima ,  Kazutaka Terashima ,  Yutaka Uematsu

IPC分类号： G02B6/124 ,  G02B6/32 ,  G02B6/34 ,  G02B27/44 ,  G02F1/37 ,  G02F1/377 ,  G02F1/383

CPC分类号： G02F1/377 ,  G02B27/4233 ,  G02B6/124 ,  G02B6/32 ,  G02B6/34 ,  G02B27/0944 ,  G02F1/383 ,  G02F2001/372 ,  G02F2001/374

摘要： A wavelength converting optical device includes an optical waveguide which has a waveguide portion and a cladding portion, at least one of which is formed of a nonlinear optical material. A fundamental wave, incident on the waveguide portion from an input end face of the waveguide, is converted into an optical second harmonic wave by Cerenkov radiation and is radiated into the cladding portion. The radiated second harmonic wave is output from an output end face of the waveguide. A reflecting film is provided on the emerging end face of the waveguide. The reflecting film includes a high reflectivity with respect to the fundamental wave of a guide mode and a low reflectivity with respect to the optical second harmonic wave. A wave front converting element is arranged to oppose the reflecting film. The converting element has a diffraction grating for converting the second harmonic wave, emerging from the output end face of the waveguide, into a plane wave.

公开(公告)号：US4799228A

公开(公告)日：1989-01-17

申请号：US898706

申请日：1986-08-21

申请人： Hiroko Nagasaka ,  Gen-ichi Hatakoshi ,  Naohiro Shimada ,  Motoyuki Yamamoto ,  Masaki Okajima ,  Yoshio Iizuka ,  Hatsumi Kawata ,  Hideaki Kinoshita ,  Nobuyuki Matsuura

发明人： Hiroko Nagasaka ,  Gen-ichi Hatakoshi ,  Naohiro Shimada ,  Motoyuki Yamamoto ,  Masaki Okajima ,  Yoshio Iizuka ,  Hatsumi Kawata ,  Hideaki Kinoshita ,  Nobuyuki Matsuura

IPC分类号： H01L31/00 ,  H01S5/20 ,  H01S5/223 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/32308 ,  H01S5/2231 ,  H01S5/204 ,  H01S5/32316

摘要： A semiconductor laser diode includes two semiconductive cladding layers of different conductivity types, which are stacked on a substrate. An active layer of an undoped semiconductor film is sandwiched between the cladding layers. A channel groove is formed in a current blocking layer and the underlying cladding layer, to be deep enough to cause the current blocking layer to be divided into two parts. A waveguide layer covers the channel groove and the current-blocking layer, to provide a slab-coupled waveguide structure for transverse mode oscillation. The second cladding layer, the current-blocking layer, and the waveguide layer are composed of gallium arsenide containing aluminum.

摘要翻译： 半导体激光二极管包括两个不同导电类型的半导体覆层，它们堆叠在衬底上。 未掺杂半导体膜的有源层夹在包层之间。 在电流阻挡层和下面的包层中形成沟槽，以使其足够深以使电流阻挡层分成两部分。 波导层覆盖沟槽和电流阻挡层，以提供用于横模振荡的平板耦合波导结构。 第二覆层，电流阻挡层和波导层由含有砷的砷化镓构成。

公开(公告)号：US4691321A

公开(公告)日：1987-09-01

申请号：US686478

申请日：1984-12-26

申请人： Nawoto Motegi ,  Yukio Watanabe ,  Naohiro Shimada ,  Masaki Okajima

发明人： Nawoto Motegi ,  Yukio Watanabe ,  Naohiro Shimada ,  Masaki Okajima

IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/2206 ,  H01S5/32316

摘要： A hetero junction type semiconductor laser device is provided wherein a hetero layer is formed on a clad layer leaving a stripe shape portion. The clad layer is formed on an active layer over a substrate. At least two coating layers of the same conductivity type as the clad layer are formed on the hetero layer so as to have a current confining effect and a built-in waveguide effect. The refractive index of the coating layers which is nearer to the active layer is greater than the refractive index of the clad layer and the refractive index of the other coating layer is smaller than the refractive index of the coating layer which is nearer to the active layer. Using this construction, a low lasing threshold current is achieved.

摘要翻译： 提供了一种异质结型半导体激光器件，其中在留下条形部分的包覆层上形成异质层。 覆层在衬底上的有源层上形成。 在异质层上形成与包覆层相同导电类型的至少两个涂层，以具有电流限制效应和内置波导效应。 更靠近有源层的涂层的折射率大于包覆层的折射率，另一个涂层的折射率小于更靠近有源层的涂层的折射率 。 使用这种结构，实现了低激光阈值电流。

公开(公告)号：US4647953A

公开(公告)日：1987-03-03

申请号：US570301

申请日：1984-01-13

申请人： Masaki Okajima ,  Nawoto Motegi ,  Yuhei Muto

发明人： Masaki Okajima ,  Nawoto Motegi ,  Yuhei Muto

IPC分类号： H01L21/205 ,  H01S5/00 ,  H01S5/20 ,  H01S5/223 ,  H01L33/00

CPC分类号： H01S5/20 ,  H01S5/2231 ,  H01S5/2059

摘要： A rib-waveguide semiconductor laser device comprising a first clad layer, an active layer, an optical rib-waveguide layer and a second clad layer, each composed of III-V semiconductor material, and sequentially formed on an insulating substrate or a III-V semiconductor substrate, wherein the rib-waveguide layer contains aluminum. A method for manufacturing the semiconductor laser device as defined above wherein the second clad layer is formed by metal-organic material chemical vapor deposition or molecular beam epitaxy.

摘要翻译： 一种肋波导半导体激光器件，包括由III-V族半导体材料构成的第一覆盖层，有源层，光学肋波导层和第二覆盖层，并且依次形成在绝缘基板或III-V 半导体衬底，其中所述肋波导层包含铝。 一种如上所述制造半导体激光器件的方法，其中第二覆层由金属 - 有机材料化学气相沉积或分子束外延形成。

公开(公告)号：US5739946A

公开(公告)日：1998-04-14

申请号：US716529

申请日：1996-09-19

申请人： Hiroki Iwanaga ,  Seizaburo Shimizu ,  Masaki Okajima ,  Masayuki Saito ,  Atsushi Sugahara ,  Kazuyuki Sunohara ,  Aira Hotta

发明人： Hiroki Iwanaga ,  Seizaburo Shimizu ,  Masaki Okajima ,  Masayuki Saito ,  Atsushi Sugahara ,  Kazuyuki Sunohara ,  Aira Hotta

IPC分类号： G02B6/35 ,  G02B26/02 ,  G02B26/00

CPC分类号： G02B26/004 ,  G02B6/3538 ,  G02B6/357

摘要： A novel display device suitable as a portable display device is disclosed. The device includes a pair of substrates and a light modulation layer sandwiched between the substrates. A functional gel is adapted to be deformed by an electric field applied between a pair of electrodes interposed between the substrates, thereby regulating the light incident on the light modulation layer. A high contrast, a high reflectance and a high light utilization are achieved without regard to the angle of visibility.

摘要翻译： 公开了一种适合作为便携式显示装置的新型显示装置。 该装置包括一对基板和夹在基板之间的光调制层。 功能性凝胶适于通过施加在插入在基板之间的一对电极之间的电场而变形，由此调节入射在光调制层上的光。 不考虑视角而实现高对比度，高反射率和高光照。

公开(公告)号：US4730925A

公开(公告)日：1988-03-15

申请号：US905330

申请日：1986-09-09

申请人： Koichi Chiba ,  Akihiro Ono ,  Takamasa Ohno ,  Masaki Okajima ,  Hiroshi Yamane ,  Minoru Hayata

发明人： Koichi Chiba ,  Akihiro Ono ,  Takamasa Ohno ,  Masaki Okajima ,  Hiroshi Yamane ,  Minoru Hayata

IPC分类号： G01N21/72 ,  G01N21/71

CPC分类号： G01N21/72

摘要： Oxygen or a mixed gas containing oxygen, or a chemical flame produced by a mixture of a combustion gas and a combustion-assisting gas containing oxygen, is blown against the surface of molten iron to cause radiation emission. The radiations are divided into components of different wavelengths, and the resulting emission spectra are measured to determine the composition of the molten iron.

摘要翻译： 氧气或含有氧气的混合气体或由燃烧气体和含氧气体的助燃气体的混合物产生的化学火焰吹向铁水表面而引起辐射。 辐射被分成不同波长的分量，并测量所得的发射光谱以确定铁水的组成。