公开(公告)号：US5065404A

公开(公告)日：1991-11-12

申请号：US551996

申请日：1990-07-12

申请人： Masaki Okajima ,  Genichi Hatakoshi ,  Masayuki Ishikawa ,  Yutaka Uematsu ,  Nawoto Motegi

发明人： Masaki Okajima ,  Genichi Hatakoshi ,  Masayuki Ishikawa ,  Yutaka Uematsu ,  Nawoto Motegi

IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/2231 ,  H01S5/204 ,  H01S5/221 ,  H01S5/3211 ,  H01S5/32308 ,  H01S5/32325

摘要： A visible-light wavelength continuous oscillation laser is disclosed which has an N type GaAs substrate, an N type GaAlAs cladding layer formed on the substrate, and a non-doped GaAlAs active layer formed on the cladding layer. The laser further includes two N type GaAlAs layers, a P type GaAlAs optical guide layer, a P type cladding layer consisting of upper and lower portions, and a ridge section. The N type GaAlAs layers contact both sides of the ridge section. The optical guide layer is sandwiched between the upper and lower portions of the P type cladding layer, is located within the ridge section, and has a refractive index greater than that of the P type cladding layer. The distance between the active layer and the optical guide layer does not depend on the condition in which etching is performed to form the ridge section, but depends basically on the time required to grow crystal.

公开(公告)号：US5202895A

公开(公告)日：1993-04-13

申请号：US695088

申请日：1991-05-03

申请人： Koichi Nitta ,  Masayuki Ishikawa ,  Yukie Nishikawa ,  Hideto Sugawara ,  Minoru Watanabe ,  Masaki Okajima ,  Genichi Hatakoshi

发明人： Koichi Nitta ,  Masayuki Ishikawa ,  Yukie Nishikawa ,  Hideto Sugawara ,  Minoru Watanabe ,  Masaki Okajima ,  Genichi Hatakoshi

IPC分类号： H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/34326 ,  H01S5/2206 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/3201 ,  H01S5/321 ,  H01S5/32325

摘要： A semiconductor laser device comprises a compound semiconductor substrate, a first cladding layer formed on the substrate, an active layer formed on the first cladding layer, made of In.sub.1-y (Ga.sub.1-x Al.sub.x).sub.y P material (0.ltoreq.x

公开(公告)号：US5036521A

公开(公告)日：1991-07-30

申请号：US439428

申请日：1989-11-21

申请人： Genichi Hatakoshi ,  Kazuhiko Itaya ,  Shigeya Naritsuka ,  Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Yukio Watanabe ,  Yasuo Ohba ,  Yoshihiro Kokubun ,  Yutaka Uematsu

发明人： Genichi Hatakoshi ,  Kazuhiko Itaya ,  Shigeya Naritsuka ,  Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Yukio Watanabe ,  Yasuo Ohba ,  Yoshihiro Kokubun ,  Yutaka Uematsu

IPC分类号： H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/32325 ,  H01S5/2004 ,  H01S5/2231 ,  H01S5/3211

摘要： In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2

公开(公告)号：US4893313A

公开(公告)日：1990-01-09

申请号：US323400

申请日：1989-03-14

申请人： Genichi Hatakoshi ,  Kazuhiko Itaya ,  Shigeya Naritsuka ,  Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Yukio Watanabe ,  Yasuo Ohba ,  Yoshihiro Kokubun ,  Yutaka Uematsu

发明人： Genichi Hatakoshi ,  Kazuhiko Itaya ,  Shigeya Naritsuka ,  Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Yukio Watanabe ,  Yasuo Ohba ,  Yoshihiro Kokubun ,  Yutaka Uematsu

IPC分类号： H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/32325 ,  H01S5/2004 ,  H01S5/2231 ,  H01S5/3211

摘要： In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2

公开(公告)号：US06400742B1

公开(公告)日：2002-06-04

申请号：US09498372

申请日：2000-02-04

申请人： Genichi Hatakoshi ,  Masaaki Onomura ,  John Rennie ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Mariko Suzuki

发明人： Genichi Hatakoshi ,  Masaaki Onomura ,  John Rennie ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Mariko Suzuki

IPC分类号： H01S500

CPC分类号： H01S5/32341 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2219 ,  H01S5/2231 ,  H01S5/4043 ,  H01S5/405 ,  H01S5/4087 ,  H01S2301/166

摘要： A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.

摘要翻译： 公开了一种半导体激光器，其通过横向模式控制在低工作电压下实现基本横向模式的连续振荡。 该半导体激光器是按照n型GaN接触层，n型GaAlN包覆层13，MQW有源层16，p型GaAlN覆盖层19的顺序依次形成蓝宝石衬底10上的以下层来制造的 其中激光器包括双重异质结构，其包括形成在包覆层19中的条纹形状的脊和形成在双重异质结构上的包层19的脊部之外的区域中的光限制层20，其中折射率 光限制层20的折射率大于p型GaAlN包覆层的折射率。

公开(公告)号：US6057565A

公开(公告)日：2000-05-02

申请号：US937166

申请日：1997-09-25

申请人： Hiroaki Yoshida ,  Masayuki Ishikawa ,  Hidetoshi Fujimoto ,  Yoshihiro Kokubun ,  Genichi Hatakoshi

发明人： Hiroaki Yoshida ,  Masayuki Ishikawa ,  Hidetoshi Fujimoto ,  Yoshihiro Kokubun ,  Genichi Hatakoshi

IPC分类号： H01L33/14 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/14 ,  H01L33/325

摘要： In the semiconductor light emitting device, a high resistance layer formed by mutual diffusion at an interface with the substrate crystal can be eliminated, and a low resistance p-type contact can be realized. In addition, it is possible to reduce the leak current when an internal current-blocking structure is formed. In practice, a compound semiconductor layer offset in composition ratio stoichiometrically is used as the contact layer. Further, when a predetermined element is added to the contact layer, a large amount of doping can be enabled in comparison with when impurities are added to the ordinary GaN based layer. Therefore, a high concentration conductive type layer can be realized while reducing the contact resistance. In addition, when the compound semiconductor layer offset away from the stoichiometric composition is used as the current-blocking layer, the current-blocking efficiency can be improved. Further, when the substrate is irradiated with light having energy slightly higher than that of the band gap of the grown crystal in the photo-excitation MOCVD method in order to eliminate the rough surface, it is possible to realize the p-type conductive of high carrier concentration.

摘要翻译： 在半导体发光器件中，可以消除在与衬底晶体的界面处相互扩散形成的高电阻层，并且可以实现低电阻p型接触。 此外，当形成内部阻流结构时，可以减小泄漏电流。 实际上，化学计量组成比偏移的化合物半导体层用作接触层。 此外，当向接触层添加预定元素时，与将杂质添加到普通的GaN基层相比，可以实现大量的掺杂。 因此，可以在降低接触电阻的同时实现高浓度导电型层。 另外，当偏离化学计量组成的化合物半导体层用作电流阻挡层时，可以提高电流阻挡效率。 此外，为了消除粗糙表面，为了消除粗糙表面，当在光激发MOCVD方法中照射具有比生长晶体的带隙稍高的光的基板时，可以实现高的p型导电 载体浓度。

公开(公告)号：US5966396A

公开(公告)日：1999-10-12

申请号：US900127

申请日：1997-07-25

申请人： Haruhiko Okazaki ,  Hidetoshi Fujimoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Masahiro Yamamoto

发明人： Haruhiko Okazaki ,  Hidetoshi Fujimoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Masahiro Yamamoto

IPC分类号： H01S5/042 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/32325 ,  H01S5/0422 ,  H01S5/2275 ,  H01S5/32341

摘要： A semiconductor laser is formed from a gallium nitride-based compound semiconductor material, and has a double-heterostructure portion obtained by sandwiching an active layer between an n-type cladding layer and a p-type cladding layer on a sapphire substrate. The double-heterostructure portion is formed into a mesa shape on the sapphire substrate via a GaN buffer layer. The two sides of this mesa structure are buried with GaN current blocking layers.

摘要翻译： 半导体激光器由氮化镓系化合物半导体材料形成，并且具有通过在蓝宝石衬底上的n型覆层和p型覆层之间夹持有源层而获得的双异质结构部。 双异质结构部分经由GaN缓冲层在蓝宝石衬底上形成台面形状。 这种台面结构的两面被GaN电流阻挡层掩埋。

公开(公告)号：US5153889A

公开(公告)日：1992-10-06

申请号：US747128

申请日：1991-08-19

申请人： Hideto Sugawara ,  Masayuki Ishikawa ,  Yoshihiro Kokubun ,  Yukie Nishikawa ,  Shigeya Naritsuka ,  Kazuhiko Itaya ,  Genichi Hatakoshi ,  Mariko Suzuki

发明人： Hideto Sugawara ,  Masayuki Ishikawa ,  Yoshihiro Kokubun ,  Yukie Nishikawa ,  Shigeya Naritsuka ,  Kazuhiko Itaya ,  Genichi Hatakoshi ,  Mariko Suzuki

IPC分类号： H01L33/00 ,  H01L33/10 ,  H01L33/14 ,  H01L33/30 ,  H01S5/042 ,  H01S5/183 ,  H01S5/22 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

CPC分类号： H01L33/145 ,  B82Y20/00 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/10 ,  H01L33/14 ,  H01L33/30

摘要： Disclosed is a semiconductor light emitting device, comprising a semiconductor substrate, a double hetero structure portion formed on the front surface of the substrate and consisting of an InGaAlP active layer and lower and upper clad layers having the active layer sandwiched therebetween, a first electrode formed in a part of the surface of the double hetero structure portion, and a second electrode formed on the back surface of the substrate. A current diffusion layer formed of GaAlAs is interposed between the double hetero structure portion and the first electrode, said current diffusion layer having a thickness of 5 to 30 microns and a carrier concentration of 5.times.10.sup.17 cm.sup.-3 to 5.times.10.sup.18 cm.sup.-3.

摘要翻译： 公开了一种半导体发光器件，包括半导体衬底，形成在衬底的前表面上并由InGaAlP有源层组成的双异质结构部分和其间夹有有源层的下和上和外包层，形成的第一电极 在双异质结构部分的表面的一部分中，以及形成在基板的背面上的第二电极。 由GaAlAs形成的电流扩散层介于双异质结构部分和第一电极之间，所述电流扩散层的厚度为5至30微米，载流子浓度为5×10 17 cm -3至5×10 18 cm -3。

公开(公告)号：US4987096A

公开(公告)日：1991-01-22

申请号：US450063

申请日：1989-12-13

申请人： Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Kazuhiko Itaya ,  Yukio Watanabe ,  Mariko Suzuki ,  Genichi Hatakoshi

发明人： Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Kazuhiko Itaya ,  Yukio Watanabe ,  Mariko Suzuki ,  Genichi Hatakoshi

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/16 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/162 ,  H01S5/168 ,  H01S5/2231 ,  H01S5/3206 ,  H01S5/32325 ,  Y10S148/025 ,  Y10S148/095

摘要： An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.

公开(公告)号：US06185238B2

公开(公告)日：2001-02-06

申请号：US09026913

申请日：1998-02-20

申请人： Masaaki Onomura ,  Genichi Hatakoshi ,  Shinya Nunoue ,  Masayuki Ishikawa

发明人： Masaaki Onomura ,  Genichi Hatakoshi ,  Shinya Nunoue ,  Masayuki Ishikawa

IPC分类号： H01S319

CPC分类号： B82Y20/00 ,  H01L2224/16225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01S5/0213 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/2213 ,  H01S5/2219 ,  H01S5/3211 ,  H01S5/34333 ,  H01L2924/00014 ,  H01L2924/00

摘要： In a nitride compound semiconductor laser including an active layer sandwiched by semiconductor layers of different conduction types on a sapphire substrate, layers of polyimide for current blocking and light confinement are formed on side surfaces of a mesa-type current confining structure with and under the p-side electrode. The laser ensures efficient, uniform carrier injection into the active layer, suppresses higher-order modes other than the fundamental transverse mode, and thereby promises a high reliability ensuring continuous pulsation under a low threshold current and a low operation voltage with low noise characteristics.

摘要翻译： 在蓝宝石衬底上包含由不同导电类型的半导体层夹持的有源层的氮化物化合物半导体激光器中，在p型和p型的台面型限流结构的侧面形成用于电流阻挡和光限制的聚酰亚胺层 侧电极。 激光器确保有源层中有效均匀的载流子注入，抑制基本横模以外的高次模，从而保证高可靠性，确保在低阈值电流和低噪声特性的低工作电压下连续脉动。