摘要:
An object of the present invention is to provide a niobium powder for producing a capacitor exhibiting excellent reliability; a sintered body formed from the powder; and a capacitor including the sintered body. Even when niobium exhibiting high affinity to oxygen is employed, the niobium powder is obtained by regulating the amount of oxygen contained in the powder. By employing niobium powder which has undergone partial oxidation and partial nitridation, in which the mass ratio of the nitrogen content to the oxygen content is about 1/45 or more, a capacitor exhibiting excellent reliability can be obtained.
摘要:
According to the present invention, a process for producing an epoxy compound, where an epoxy compound can be selectively produced from olefins with good yield at low cost in a safe manner by a simple operation under mild conditions without using a quaternary ammonium salt or a metal compound, is provided. The present invention relates to a process for producing an epoxy compound, comprising epoxidizing a carbon-carbon double bond of an organic compound having a carbon-carbon double bond by using hydrogen peroxide as an oxidant, wherein the epoxidation is carried by out using an organic nitrile compound and an organic amine compound.
摘要:
A thin strip-shaped grindstone 12 is held flat under tension and moved backwards and forwards in the longitudinal direction, while the grindstone is moved in a direction perpendicular to a cylindrical ingot 1 and cuts the ingot. A metal-bonded grindstone is used as the strip-shaped grindstone 12, at least one pair of electrodes 23 are disposed adjacent to both surfaces of the metal-bonded grindstone one on each side of the ingot. The metal-bonded grindstone is made the positive electrode and DC voltage pulses are applied between the grindstone and the electrodes, and at the same time, a conducting processing fluid 25 is fed to the gaps between the metal-bonded grindstone and the electrodes, and both surfaces of the metal-bonded grindstone are dressed electrolytically on both sides while the cylindrical ingot is being cut by the metal-bonded grindstone. A large diameter, hard, refractory ingot can be efficiently cut with a small amount of cutting waste, warping and uneven thickness of the finished surface are reduced, roughness of the cut surface is small, little damage is given to the crystal during processing, running costs are low and there is a reduction in manpower requirements.
摘要:
Silicon carbide single crystal is produced by allowing a silicon raw material to continuously react with a carbon raw material to generate gas, which reaches a seed crystal substrate on which a silicon carbide single crystal grows. Preferably, the silicon raw material is continuously fed onto the carbon raw material placed in a reaction crucible, and the carbon raw material is maintained at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas. An apparatus used for producing the silicon carbide single crystal comprises a reaction crucible, and a seed crystal substrate disposed in the reaction crucible; and further comprises means for maintaining the carbon raw material placed in the reaction crucible at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas, and means for continuously feeding the silicon raw material onto the carbon raw material placed in the reaction crucible.
摘要:
A process for producing a silicon carbide single crystal and a production apparatus therefor which enable, under stable conditions, continuous production of a silicon carbide single crystal which has a reduced density and dispersion of crystal defects in a growth direction, no lattice distortion, a large diameter, and constant quality. A melted or vaporized silicon material is introduced from the outside of a reaction system into a carbon material heated to a temperature equal to or higher than a temperature at which the silicon material vaporizes; and a reaction gas containing silicon gas and silicon carbide gas generated by a reaction between the carbon material and the silicon material is caused to reach a silicon carbide seed crystal substrate 5 which is held at a temperature lower than that of the carbon material, so that a silicon carbide single crystal grows on the silicon carbide seed crystal substrate.
摘要:
A process of purifying L-ascorbic acid 2-phosphate is disclosed, comprising passing a solution containing L-ascorbic acid 2-phosphate through a column of a basic anion exchanger resin whose ion-exchange groups consist essentially of a primary amine group, a secondary amine group, a tertiary amine group or a mixture thereof, and eluting the L-ascorbic acid 2-phosphate with an aqueous solution of a mineral acid or an inorganic salt. L-ascorbic acid 2-phosphate can be isolated at a high efficiency through easy steps.
摘要:
A process for producing epichlorohydrin comprising the steps of:(a) reacting allyl alcohol with chlorine at a temperature of -30.degree. C. to 20.degree. C. under a pressure of 0 to 10 atm (gauge) in an aqueous hydrogen chloride solution containing more than 45% but not more than 70% by weight of hydrogen chloride to form 2,3-dichloro-1-propanol;(b) separating at least a portion of the hydrogen chloride by heating the reaction mixture obtained at step (a) to recover the hydrogen chloride in the form of gas;(c) recycling the hydrogen chloride recovered at step (b) to step (a);(d) separating the resultant liquid mixture after recovering at least the portion of the hydrogen chloride at step (b) into an aqueous phase and an oil phase by cooling the resultant liquid mixture to a temperature of 40.degree. C. or less;(e) recycling at least a portion of the separated aqueous phase at step (d) to step (a); and(f) reacting the oil phase separated at step (d) directly or after increasing the purity of 2,3-dichloro-1-propanol contained in the oil phase by a separation operation with an aqueous alkaline solution or suspension at a temperature of 40.degree. C. to 110.degree. C. to form epichlorohydrin.According to this process, the desired epichlorohydrin can be industrially and advantageously produced at a high yield and selectivity.
摘要:
According to the present, invention, a process for producing an epoxy compound, where an epoxy compound can be selectively produced from olefins with good yield at low cost in a safe manner by a simple operation under mild conditions without using a quaternary ammonium salt or a metal compound, is provided. The present invention relates to a process for producing an epoxy compound, comprising epoxidizing a carbon-carbon double bond of an organic compound having a carbon-carbon double bond by using hydrogen peroxide as an oxidant, wherein the epoxidation is carried by out using an organic nitrile compound and an organic amine compound.
摘要:
A fluoran derivative useful for a heat-sensitive recording material, having the following general formula I; ##STR1## wherein R.sub.1 and R.sub.2, which may be the same or different, stand for an alkyl group having 1 to 9 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, a phenyl group or a phenyl group substituted by an alkyl group having 1 to 4 carbon atoms, and R.sub.3 and R.sub.4, which may be the same or different, stand for an alkyl group having 1 to 6 carbon atoms or a phenyl group or R.sub.3 and R.sub.4 may form a 5- to 8-membered cycloalkane together with the carbon atom to which they are bonded.
摘要:
Process for preparing .alpha.,.alpha.-dimethylbenzyl isocyanate or its derivatives which comprises reacting the corresponding organic halide in an anhydrous condition in the presence of a specified catalyst with an alkali metal cyanate in an aprotic solvent which forms no salt with a hydrogen halide.