公开(公告)号：US06599361B2

公开(公告)日：2003-07-29

申请号：US09882048

申请日：2001-06-18

申请人： Haipeng Tang ,  James B. Webb ,  Jennifer A. Bardwell

发明人： Haipeng Tang ,  James B. Webb ,  Jennifer A. Bardwell

IPC分类号： C30B2300

CPC分类号： C30B23/02 ,  C30B29/403 ,  C30B29/406

摘要： A method is described for selectively depositing a GaN epitaxial layer on a substrate. The substrate is first patterned with a seed layer, preferably of AlN, and then the GaN epitxial layer is grown on the resulting patterned substrate by molecular beam epitaxy (MBE) such that growth occurs selectively over the seed layer.

公开(公告)号：US06206962B1

公开(公告)日：2001-03-27

申请号：US09178749

申请日：1998-10-27

申请人： Satoru Kijima ,  Hiroyuki Okuyama

发明人： Satoru Kijima ,  Hiroyuki Okuyama

IPC分类号： C30B2300

CPC分类号： H01L33/28 ,  H01L21/02395 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02485 ,  H01L21/02507 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631

摘要： An n-type cladding layer, the first guiding layer, an active layer, the second guiding layer, a p-type cladding layer, a backing layer, a contact layer, a superlattice layer and a cap layer are stacked in this order on an n-type substrate. The cap layer comprises p-type ZnTe and has a thickness of less than 10 nm. The contact layer is comprised of p-type ZnSe and the concentration of nitrogen added to the contact layer is in the range of 1 to 2×1018 cm−3. The backing layer comprises p-type ZnSSe mixed crystal and the concentration of nitrogen added to the backing layer is higher than that of the contact layer, in the range of 1 to 3×1018 cm−3. Before the corresponding Group II-VI compound semiconductor layers are grown by the MBE method, the temperature of cells is once increased. The operating voltage of the semiconductor light emitting device can be lowered by increasing the carrier concentrations of the Group II-VI compound semiconductor layers between the p-side electrode and the p-type cladding layer.

摘要翻译： 将n型包覆层，第一引导层，有源层，第二引导层，p型覆层，背衬层，接触层，超晶格层和覆盖层依次堆叠在 n型衬底。 盖层包括p型ZnTe，其厚度小于10nm。 接触层由p型ZnSe组成，并且加入到接触层中的氮浓度在1至2×10 18 cm -3的范围内。 背衬层包括p型ZnSSe混合晶体，添加到背衬层中的氮浓度高于接触层的浓度，范围为1至3×10 18 cm -3。 在通过MBE法生长相应的II-VI族化合物半导体层之前，电池的温度一度增加。 通过增加p侧电极和p型覆层之间的II-VI族化合物半导体层的载流子浓度，能够降低半导体发光元件的工作电压。

公开(公告)号：US06514338B2

公开(公告)日：2003-02-04

申请号：US09748387

申请日：2000-12-27

申请人： Masashi Shigeto ,  Kotaro Yano ,  Nobuyuki Nagato

发明人： Masashi Shigeto ,  Kotaro Yano ,  Nobuyuki Nagato

IPC分类号： C30B2300

CPC分类号： C30B23/02 ,  C30B23/00 ,  C30B25/00 ,  C30B29/36 ,  Y10T117/10

摘要： Silicon carbide single crystal is produced by allowing a silicon raw material to continuously react with a carbon raw material to generate gas, which reaches a seed crystal substrate on which a silicon carbide single crystal grows. Preferably, the silicon raw material is continuously fed onto the carbon raw material placed in a reaction crucible, and the carbon raw material is maintained at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas. An apparatus used for producing the silicon carbide single crystal comprises a reaction crucible, and a seed crystal substrate disposed in the reaction crucible; and further comprises means for maintaining the carbon raw material placed in the reaction crucible at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas, and means for continuously feeding the silicon raw material onto the carbon raw material placed in the reaction crucible.

摘要翻译： 通过使硅原料与碳原料连续反应而生成碳化硅单晶，生成气体，其到达碳化硅单晶生长的晶种基板。 优选地，将硅原料连续地供给到放置在反应坩埚中的碳原料上，并且将碳原料保持在使得碳与熔融状态或气态的硅反应的温度， 反应气体。 用于制造碳化硅单晶的装置包括反应坩埚和设置在反应坩埚中的晶种衬底; 并且还包括用于将置于反应坩埚中的碳原料保持在使得碳与熔融状态或气态的硅反应以产生反应气体的温度的装置，以及用于连续供给硅原料的装置 放置在反应坩埚中的碳原料上。

公开(公告)号：US06485564B1

公开(公告)日：2002-11-26

申请号：US09658507

申请日：2000-11-13

申请人： Yijun Liu ,  Hiroshi Shinriki ,  Takashi Magara

发明人： Yijun Liu ,  Hiroshi Shinriki ,  Takashi Magara

IPC分类号： C30B2300

CPC分类号： H01L21/31691 ,  C23C16/40 ,  C23C16/409 ,  H01L28/55

摘要： In a thin film forming method of the invention, an atmosphere for a base as a thin film forming target is set to a high vacuum of, e.g., 0.01 Torr or less, and a gas of an organometallic compound and an oxidizing gas are introduced onto a base surface heated to about 450° C., to form a plurality of crystal nuclei, made of an oxide of a metal constituting the organometallic compound, on the base surface. The atmosphere for the base is then set to a lower vacuum than the first vacuum degree, and the gas of the organometallic compound and the oxidizing gas are subsequently introduced onto the base surface heated to about 45° C., to form a film made of the oxide of the metal there. In the above process, in the first step, the vacuum degree is set to a vacuum degree at which the oxide of the metal is formed by crystal growth on surfaces of different materials at the first temperature, and the plurality of crystal nuclei are formed at a high density so that a crystal grain which is formed by growing a crystal nucleus comes into contact with a crystal grain growing from an adjacent crystal nucleus. In the subsequent step, the temperature for the base is set to less than a temperature at which the oxide of the metal is formed by crystal growth on the surfaces of the different materials.

摘要翻译： 在本发明的薄膜形成方法中，将作为薄膜形成靶的基材的气氛设定为例如0.01Torr以下的高真空度，将有机金属化合物和氧化气体的气体引入到 基底表面加热至约450℃，以在基面上形成由构成有机金属化合物的金属的氧化物制成的多个晶核。 然后将基底的气氛设定为比第一真空度更低的真空度，随后将有机金属化合物和氧化气体的气体引入加热至约45℃的基底表面上，以形成由 金属的氧化物在那里。 在上述过程中，在第一步骤中，将真空度设定为在第一温度下在不同材料的表面上通过晶体生长形成金属氧化物的真空度，并且多个晶核形成在 高密度，使得通过生长晶核而形成的晶粒与从相邻晶核生长的晶粒接触。 在随后的步骤中，碱的温度设定为小于在不同材料的表面上通过晶体生长形成金属的氧化物的温度。

公开(公告)号：US06270571B1

公开(公告)日：2001-08-07

申请号：US09436989

申请日：1999-11-09

申请人： Tatsuya Iwasaki ,  Tohru Den

发明人： Tatsuya Iwasaki ,  Tohru Den

IPC分类号： C30B2300

CPC分类号： C30B11/12 ,  C30B25/005 ,  C30B29/16

摘要： A method for producing narrow wires including titanium oxide of high crystallinity and diameter of the order of nanometer, in particular whiskers of titanium oxide, and including a first step of preparing a base having a titanium-including surface, second step of discretely depositing a material other than titanium over the above surface, and third step of thermally treating the above surface, obtained by the second step, in a titanium-oxidizing atmosphere.

摘要翻译： 一种生产具有高结晶度和直径的纳米二氧化钛，特别是二氧化钛晶须的窄线的方法，包括制备具有含钛表面的基底的第一步骤，第二步是离子沉积材料 除了上述表面以外的钛，以及通过第二工序获得的上述表面在钛氧化气氛中进行热处理的第三工序。

公开(公告)号：US06610143B2

公开(公告)日：2003-08-26

申请号：US09764981

申请日：2001-01-16

申请人： Peter J. Zdebel ,  Julio Carlos Costa

发明人： Peter J. Zdebel ,  Julio Carlos Costa

IPC分类号： C30B2300

CPC分类号： H01L29/66242 ,  H01L21/76224 ,  H01L21/763

摘要： A method of manufacturing a semiconductor component includes forming an electrically insulative layer (220) over a semiconductor substrate where a first portion of the electrically insulative layer is located over a first region (560) of the semiconductor substrate and where a second portion of the first layer is located over a second region (550) of the semiconductor substrate. An isolation region (610) is formed in the semiconductor substrate between the first and second regions of the semiconductor substrate. After forming the isolation region, the second portion of the first layer is removed, and, after removing the second potion of the first layer, an epitaxial layer (630) is grown over the second region of the semiconductor substrate.

公开(公告)号：US06300226B1

公开(公告)日：2001-10-09

申请号：US09244302

申请日：1999-02-03

申请人： Tsuguo Miyata ,  Akihiro Kuroyanagi

发明人： Tsuguo Miyata ,  Akihiro Kuroyanagi

IPC分类号： C30B2300

CPC分类号： C04B35/565 ,  C23C16/01 ,  C23C16/325 ,  Y10S438/931

摘要： A formed SiC product having a low degree of light transmittance useful in a variety of heat resistant components such as equalizing rings, dummy wafers, and other components employed in semiconductor manufacturing facilities, and the manufacturing method thereof. The product is a CVD-formed SiC product prepared by growing a coating on a substrate with a CVD process and thereafter removing the substrate. The product is characterized by having at least one SiC layer with different grain characteristics located either on its surface or within the main structure, and having a light transmittance rate of 0.4% or less for the wavelength range from 300 to 2,500 nm, and 2.5% or less for the wavelength range exceeding 2,500 nm. The method for manufacturing the formed SiC product is characterized by forming at least one SiC layer with different grain characteristics either on its surface or within the main structure provided by changing the CVD reaction conditions.

摘要翻译： 具有低透光率的成形SiC产品及其制造方法，其可用于各种耐热组分如均化环，假晶片和半导体制造设备中使用的其它组分。 该产品是通过用CVD工艺在衬底上生长涂层并随后除去衬底而制备的CVD形成的SiC产品。 该产品的特征在于具有位于其表面或主结构内的至少一个具有不同晶粒特性的SiC层，并且对于波长范围为300-2,500nm，透光率为0.4％以下，2.5％ 在2500nm以上的波长范围。 形成的SiC产品的制造方法的特征在于，通过改变CVD反应条件，在其表面或主要结构内形成至少一个具有不同晶粒特性的SiC层。

公开(公告)号：US06245144B1

公开(公告)日：2001-06-12

申请号：US09455136

申请日：1999-12-06

申请人： Thomas C. Bitner ,  Chris W. Ebert ,  Michael Geva ,  Charles H. Joyner

发明人： Thomas C. Bitner ,  Chris W. Ebert ,  Michael Geva ,  Charles H. Joyner

IPC分类号： C30B2300

CPC分类号： C30B25/02 ,  C30B29/40

摘要： A method of controlling the relative amounts of silicon dopant inside and outside of an enhanced growth region on an indium phosphide substrate using a metalorganic chemical vapor deposition (MOCVD) process. The method includes the steps of positioning the indium phosphide substrate in a reactor chamber, and defining an enhanced growth region on the substrate by depositing a dielectric mask on the substrate. The indium phosphide substrate is heated to a growth temperature of between about 600 and 630° C., and the pressure in the reactor chamber is adjusted to between about 40 and 80 Torr. A first gas contains a metalorganic compound comprising indium and a hydrogen carrier gas flow of between about 12 and 16 liters/minute, and a second gas containing a phosphide and a doping gas containing a silicon dopant at a flow rate of between are introduced into the reactor chamber. The first and second gases are mixed in the chamber and forced over the substrate in a laminar flow such that the mixed convection parameter is between about 0.31 and 0.33. An n-type indium phosphide epitaxial layer is thereby grown over the substrate by reacting the first with the second gas and thermally decomposing the carrier gas, whereby areas inside and outside of the growth enhanced region contain substantially the same amount of silicon dopant.

摘要翻译： 一种使用金属有机化学气相沉积（MOCVD）法在铟磷化物衬底上控制增强生长区内部和外部的硅掺杂剂的相对量的方法。 该方法包括以下步骤：将磷化铟基板定位在反应室中，并通过在基板上沉积介电掩模来限定衬底上增强的生长区域。 将磷化铟基底加热至约600至630℃的生长温度，并将反应器室中的压力调节至约40至80托。 第一气体含有包含铟的金属有机化合物和约12至16升/分钟的氢气载气流，并且将含有磷化物和含有硅掺杂剂的掺杂气体的第二气体以其流速引入到 反应室。 第一和第二气体在腔室中混合并以层流强迫在衬底上，使得混合对流参数在约0.31至0.33之间。 因此，通过使第一和第二气体反应而使衬底上的n型磷化铟外延层生长，并使载气热分解，由此生长增强区域内外的区域含有大致相同量的硅掺杂剂。

公开(公告)号：US06231668B1

公开(公告)日：2001-05-15

申请号：US08795622

申请日：1997-02-06

申请人： Rainer Loesch ,  Hartmut Hillmer ,  Winfried Schlapp ,  Armin Poecker ,  Walter Betz ,  Rainer Goebel

发明人： Rainer Loesch ,  Hartmut Hillmer ,  Winfried Schlapp ,  Armin Poecker ,  Walter Betz ,  Rainer Goebel

IPC分类号： C30B2300

CPC分类号： G01B15/02 ,  Y10T117/10 ,  Y10T117/1004

摘要： A method for manufacturing and calibrating a scale in the nanometer range for technical devices which are used for the high-resolution or ultrahigh-resolution imaging of structures, and such a scale. To construct the scale, at least two different crystalline or amorphous materials are used, which, when imaged, are easily distinguished from one another by their contrast. These material layers are deposited using a suitable material deposition method as a heterolayer sequence onto a substrate material. The produced heterolayer sequence is characterized experimentally using an analysis method that is sensitive to the individual layer thicknesses of the heterolayer sequence. The data obtained from the analysis method are evaluated and recorded. The layer structure is exposed by splitting open the heterolayer sequence in the deposition direction. The scale is suited for calibrating technical devices used for scanning electron microscopy, scanning transmission electron microscopy, or scanning probe microscopy (atomic force microscopy, scanning tunneling microscopy).

摘要翻译： 用于制造和校准用于结构的高分辨率或超高分辨率成像的技术装置的纳米范围的尺度的方法以及这样的尺度。 为了构建刻度，使用至少两种不同的晶体或无定形材料，当成像时，通过其对比容易地彼此区分。 使用合适的材料沉积方法将这些材料层作为多层序列沉积到基底材料上。 所制备的异双层序列的特征是使用对多层序列的各层厚度敏感的分析方法。 评估并记录从分析方法获得的数据。 通过在沉积方向上分离打开杂双层序列来暴露层结构。 该规模适用于校准用于扫描电子显微镜，扫描透射电子显微镜或扫描探针显微镜（原子力显微镜，扫描隧道显微镜）的技术装置。

公开(公告)号：US06749685B2

公开(公告)日：2004-06-15

申请号：US09931537

申请日：2001-08-16

申请人： Thomas G. Coleman

发明人： Thomas G. Coleman

IPC分类号： C30B2300

CPC分类号： C30B23/00 ,  C30B23/005 ,  C30B29/36

摘要： Methods of growing silicon carbide are provided in which an electric arc is used to sublime a silicon carbide source material. In these embodiments, a silicon carbide seed crystal is introduced into a sublimation system, along with first and second electrodes that are separated by a gap. A power supply is coupled to at least one of the electrodes and used to create an electric arc across the gap between the two electrodes. This electric arc is used to sublime at least a portion of a silicon carbide source material. The vaporized silicon carbide material may then be encouraged to condense onto a seed material to produce monocrystalline or polycrystalline silicon carbide. In embodiments of the present invention, at least one of the electrodes is comprised of silicon carbide and serves as the silicon carbide source material.

摘要翻译： 提供生长碳化硅的方法，其中使用电弧来提高碳化硅源材料。 在这些实施例中，将碳化硅晶种与由间隙隔开的第一和第二电极一起引入升华系统。 电源耦合到至少一个电极并且用于在两个电极之间的间隙上产生电弧。 该电弧用于升华至少一部分碳化硅源材料。 然后可以鼓励蒸发的碳化硅材料冷凝到种子材料上以产生单晶或多晶碳化硅。 在本发明的实施例中，至少一个电极由碳化硅组成并用作碳化硅源材料。