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公开(公告)号：US07314651B2
公开(公告)日：2008-01-01
申请号：US10472822
申请日：2002-03-28
申请人： Hitoshi Sakamoto , Noriaki Ueda , Takashi Sugino
发明人： Hitoshi Sakamoto , Noriaki Ueda , Takashi Sugino
CPC分类号： H01L21/02274 , C04B35/583 , C04B2235/386 , C04B2235/422 , C23C16/342 , C23C16/36 , H01L21/02112 , H01L21/318 , H01L21/76829
摘要： A plasma 10 is generated within a film formation chamber 2, and mainly a nitrogen gas 11 is excited within the film formation chamber 2. Then, the excited nitrogen gas 11 is mixed with a diborane gas 13 diluted with a hydrogen gas to react them, thereby forming a boron nitride film 15 on a substrate 4. At the initial stage of film formation, the nitrogen gas 11 is supplied in excess to suppress the occurrence of an amorphous phase on the interface. As a result, the boron nitride film 15 improved in moisture absorption resistance on the interface with the substrate and maintaining low dielectric constant properties is formed.
摘要翻译： 在成膜室2内产生等离子体10，主要在成膜室2内激发氮气11。 然后，将激发的氮气11与用氢气稀释的乙硼烷气体13进行反应，从而在基板4上形成氮化硼膜15。 在成膜的初始阶段，过量地供给氮气11，以抑制界面处的非晶相的发生。 结果，氮化硼膜15与衬底的界面上的耐吸湿性提高，并且保持低的介电常数特性。
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公开(公告)号：US20060191481A1
公开(公告)日：2006-08-31
申请号：US11391241
申请日：2006-03-29
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/08 , C23C16/14 , C23C16/4488 , C23C16/452 , C23C16/505 , H01L21/28556
摘要： An apparatus for forming a metal film, including a reaction vessel for housing a substrate, a precursor feeding device for bubbling a carrier gas through a liquid organometallic complex, vaporizing the organometallic complex, producing a precursor from the vaporized organometallic complex, and feeding the precursor into the reaction vessel, a rotating magnetic field generator for creating a rotating magnetic field in a space above the substrate, and a second plasma generator for generating a plasma from a reducing gas fed into the reaction vessel.
摘要翻译： 一种用于形成金属膜的装置，包括用于容纳基底的反应容器，用于使载气鼓泡通过液体有机金属络合物的前体进料装置，汽化有机金属配合物，从蒸发的有机金属络合物制备前体，以及将前体 旋转磁场发生器，用于在衬底上方的空间中产生旋转磁场;以及第二等离子体发生器，用于从进料到反应容器中的还原气体产生等离子体。
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公开(公告)号：US20060191477A1
公开(公告)日：2006-08-31
申请号：US11391251
申请日：2006-03-29
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/08 , C23C16/14 , C23C16/4488 , C23C16/452 , C23C16/505 , H01L21/28556
摘要： An apparatus for forming a metal film, including a reaction vessel in which a substrate to be treated is placed, a raw material gas feed pipe inserted into the inlet vessel for feeding chlorine or hydrogen chloride, a spiral tube attached to the inner end of the raw material gas feed pipe, having a raw material gas flow passage whose inner surface is made of copper, and equipped with a heating element, an atomic reducing gas producing device for producing an atomic reducing gas within the reaction vessel, at least in the neighborhood of the substrate to be treated, and an evacuation device for evacuating any gas from the reaction vessel and the raw material gas flow passage.
摘要翻译： 一种用于形成金属膜的装置，包括其中放置待处理基板的反应容器，插入入口容器中用于供给氯或氯化氢的原料气体进料管，附接到待处理基材的内端的螺旋管 原料气体供给管，其内表面由铜制成的原料气体流路，配置有加热元件，至少在邻近区域内配置有用于在反应容器内制造原子还原气体的原子生成气体生成装置 以及用于从反应容器和原料气体流路中排出任何气体的排气装置。
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公开(公告)号：US20060177583A1
公开(公告)日：2006-08-10
申请号：US11391242
申请日：2006-03-29
CPC分类号： C23C16/45565 , C23C16/08 , C23C16/14 , C23C16/4488 , C23C16/452 , C23C16/505 , H01L21/28556
摘要： A method for forming a metal film, including bringing a raw material gas containing a halogen into contact with a hot metallic filament, thereby etching the filament with the raw material gas to produce a precursor composed of a metallic component contained in the filament and the halogen contained in the raw material gas, producing an atomic reducing gas by heating a reducing gas to a high temperature, passing the precursor through the atomic reducing gas to remove the halogen from the precursor, and directing the resulting metallic ion or neutral metal onto a substrate to form a thin metal film on the substrate.
摘要翻译： 一种形成金属膜的方法，包括使含有卤素的原料气体与热金属细丝接触，由此用原料气体蚀刻细丝，以制造由长丝中包含的金属成分构成的前体和卤素 包含在原料气体中，通过将还原气体加热至高温来制造原子还原气体，使前体通过原子还原气体从前体除去卤素，并将得到的金属离子或中性金属导向基板 以在基板上形成薄金属膜。
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公开(公告)号：US20060027168A1
公开(公告)日：2006-02-09
申请号：US11240358
申请日：2005-10-03
申请人： Ryuichi Matsuda , Noriaki Ueda , Kazuto Yoshida
发明人： Ryuichi Matsuda , Noriaki Ueda , Kazuto Yoshida
IPC分类号： C23C16/00
摘要： A power supply antenna comprises a plurality of coils disposed concentrically. Power supply portions formed at opposite ends of the respective coils are located in different phases on the same plane such that spacing between the adjacent power supply portions is equal. The power supply antenna can generate a uniform electric field and a uniform magnetic field, although it has the plural coils.
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