公开(公告)号：US20080156651A1

公开(公告)日：2008-07-03

申请号：US12000378

申请日：2007-12-12

申请人： Youn-seon Kang ,  Kae-dong Back ,  Woong-chul Shin ,  Seung-jin Oh

发明人： Youn-seon Kang ,  Kae-dong Back ,  Woong-chul Shin ,  Seung-jin Oh

IPC分类号： B05D1/36 ,  C25D5/54

CPC分类号： H01L27/2436 ,  C25D3/56 ,  C25D5/50 ,  C25D7/12 ,  C25D9/08 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1641 ,  H01L45/1683

摘要： Provided are a method of forming a phase change layer, a method of manufacturing a storage node using the method of forming a phase change layer, and a method of manufacturing a phase change memory device using the method of manufacturing a storage node. The method of forming a phase change layer may use an electrochemical deposition (ECD) method. The method of forming the phase change layer may include forming an electrolyte by mixing a solvent and precursors, each precursor containing an element of the phase change layer, dipping an anode plate and a cathode plate in the electrolyte to be spaced apart from each other, wherein the cathode plate may be a substrate on which the phase change layer is to be deposited, setting deposition conditions of the phase change layer; and supplying a voltage between the anode plate and the cathode plate.

摘要翻译： 提供了形成相变层的方法，使用形成相变层的方法制造存储节点的方法，以及使用制造存储节点的方法制造相变存储器件的方法。 形成相变层的方法可以使用电化学沉积（ECD）方法。 形成相变层的方法可以包括通过混合溶剂和前体形成电解质，每个前体含有相变层的元素，将阳极板和阴极板浸入电解液中以彼此间隔开， 其中所述阴极板可以是其上将沉积相变层的衬底，设定相变层的沉积条件; 并在阳极板和阴极板之间提供电压。

公开(公告)号：US20070120889A1

公开(公告)日：2007-05-31

申请号：US11425204

申请日：2006-06-20

申请人： Sung-gyu KANG ,  Kae-dong Back ,  Seung-mo Lim ,  Jae-woo Chung

发明人： Sung-gyu KANG ,  Kae-dong Back ,  Seung-mo Lim ,  Jae-woo Chung

IPC分类号： B41J2/135

CPC分类号： B41J2/1433 ,  B41J2/1606 ,  B41J2/162 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1643 ,  Y10T29/49401

摘要： A method of forming a hydrophobic coating layer on a surface of a nozzle plate of an inkjet printhead includes forming a plurality of nozzles in the nozzle plate, each of the nozzles having an exit, stacking a film on the surface of the nozzle plate to cover the exit of each of the nozzles, forming a predetermined metal layer on an inner wall of each of the nozzles and an inner surface of the film covering the exit of each of the nozzles using a plating method, removing the film from the surface of the nozzle plate, forming a hydrophobic coating layer on the surface of the nozzle plate to cover the metal layer exposed through the exit of each of the nozzles, and removing the metal layer formed on the inner wall of each of the nozzles and the hydrophobic coating layer formed on the surface of the metal layer.

摘要翻译： 在喷墨打印头的喷嘴板的表面上形成疏水涂层的方法包括在喷嘴板中形成多个喷嘴，每个喷嘴具有出口，在喷嘴板的表面上堆叠膜以覆盖 每个喷嘴的出口，在每个喷嘴的内壁上形成预定的金属层，并且使用电镀方法将膜的内表面覆盖每个喷嘴的出口，从该表面移除该膜 喷嘴板，在喷嘴板的表面上形成疏水涂层，以覆盖通过每个喷嘴的出口暴露的金属层，并且去除形成在每个喷嘴的内壁上的金属层和疏水涂层 形成在金属层的表面上。

公开(公告)号：US20110049095A1

公开(公告)日：2011-03-03

申请号：US12941218

申请日：2010-11-08

申请人： Sung-gyu Kang ,  Kae-dong Back ,  Seung-mo Lim ,  Jae-Woo Chung

发明人： Sung-gyu Kang ,  Kae-dong Back ,  Seung-mo Lim ,  Jae-Woo Chung

IPC分类号： B05D3/10 ,  B05D1/02 ,  B05D3/00

CPC分类号： B41J2/1433 ,  B41J2/1606 ,  B41J2/162 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1643 ,  Y10T29/49401

摘要： A method of forming a hydrophobic coating layer on a surface of a nozzle plate of an inkjet printhead includes forming a plurality of nozzles in the nozzle plate, each of the nozzles having an exit, stacking a film on the surface of the nozzle plate to cover the exit of each of the nozzles, forming a predetermined metal layer on an inner wall of each of the nozzles and an inner surface of the film covering the exit of each of the nozzles using a plating method, removing the film from the surface of the nozzle plate, forming a hydrophobic coating layer on the surface of the nozzle plate to cover the metal layer exposed through the exit of each of the nozzles, and removing the metal layer formed on the inner wall of each of the nozzles and the hydrophobic coating layer formed on the surface of the metal layer.

摘要翻译： 在喷墨打印头的喷嘴板的表面上形成疏水涂层的方法包括在喷嘴板中形成多个喷嘴，每个喷嘴具有出口，在喷嘴板的表面上堆叠膜以覆盖 每个喷嘴的出口，在每个喷嘴的内壁上形成预定的金属层，并且使用电镀方法将膜的内表面覆盖每个喷嘴的出口，从该表面移除该膜 喷嘴板，在喷嘴板的表面上形成疏水涂层，以覆盖通过每个喷嘴的出口暴露的金属层，并且去除形成在每个喷嘴的内壁上的金属层和疏水涂层 形成在金属层的表面上。

公开(公告)号：US07786573B2

公开(公告)日：2010-08-31

申请号：US11481012

申请日：2006-07-06

申请人： Min-seog Choi ,  Kae-dong Back ,  In-sang Song ,  Woon-bae Kim ,  Byung-gil Jeong ,  Kyu-dong Jung

发明人： Min-seog Choi ,  Kae-dong Back ,  In-sang Song ,  Woon-bae Kim ,  Byung-gil Jeong ,  Kyu-dong Jung

IPC分类号： H01L23/34 ,  H01R12/16 ,  H05K1/11

CPC分类号： H01L25/0657 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/50 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2225/06541 ,  H03H9/0547

摘要： A packaging chip formed with plural wafers. The packaging chip includes plural wafers stacked in order and plural interconnection electrodes directly connecting the plural wafers from an upper surface of an uppermost wafer of the plural wafers to the other wafers. At least one or more of the plural wafers mounts a predetermined circuit device thereon. Further, at least one or more wafers of the plural wafers have a cavity of a predetermined size. Meanwhile, the packaging chip further includes plural pads independently arranged on the upper surface of the uppermost wafer one another and electrically connected to the plural interconnection electrodes respectively. Accordingly, the present invention can enhance the performance and reliability of a packaging chip and improve fabrication yield.

摘要翻译： 形成有多个晶片的封装芯片。 封装芯片包括依次堆叠的多个晶片和从多个晶片的最上面的晶片的上表面直接连接多个晶片到另一个晶片的多个互连电极。 多个晶片中的至少一个或多个在其上安装预定的电路装置。 此外，多个晶片的至少一个或多个晶片具有预定尺寸的空腔。 同时，封装芯片还包括独立地布置在最上面的晶片的上表面上并分别电连接到多个互连电极的多个焊盘。 因此，本发明可以提高封装芯片的性能和可靠性，并提高制造成品率。

公开(公告)号：US20060286798A1

公开(公告)日：2006-12-21

申请号：US11412900

申请日：2006-04-28

申请人： Moon-chul Lee ,  Jong-oh Kwon ,  Kae-dong Back ,  Qian Wang ,  Jun-sik Hwang ,  Kyu-dong Jung

发明人： Moon-chul Lee ,  Jong-oh Kwon ,  Kae-dong Back ,  Qian Wang ,  Jun-sik Hwang ,  Kyu-dong Jung

IPC分类号： H01L21/44

CPC分类号： B81C1/00301 ,  B81B2207/095 ,  H01L23/04 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/00

摘要： A cap for a semiconductor device package, including a body formed at a predetermined thickness with a cavity. The cap further includes a first seed layer formed on an inner circumference of a first via hole formed at a predetermined depth from the cavity formation surface of the body, a second seed layer formed on an inner circumference of a second via hole formed at a predetermined depth from the opposite surface to the cavity formation surface of the body, and plating materials filled in the first via hole and the second via hole.

公开(公告)号：US20060175707A1

公开(公告)日：2006-08-10

申请号：US11339500

申请日：2006-01-26

申请人： Moon-chul Lee ,  Woon-bae Kim ,  Kae-dong Back ,  Qian Wang ,  Jun-sik Hwang ,  Kyu-dong Jung

发明人： Moon-chul Lee ,  Woon-bae Kim ,  Kae-dong Back ,  Qian Wang ,  Jun-sik Hwang ,  Kyu-dong Jung

IPC分类号： H01L23/52

CPC分类号： B81C1/00301 ,  B81B2207/095 ,  H01L21/76898 ,  H01L23/04 ,  H01L23/10 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wafer level packaging cap and method thereof for a wafer level packaging are provided. The wafer level packaging cap covering a device wafer with a device thereon, includes a cap wafer having on a bottom surface a cavity providing a space for receiving the device, and integrally combined with the device wafer, a plurality of metal lines formed on the bottom surface of the cap wafer to correspond to a plurality of device pads formed on the device wafer to be electrically connected to the device, a plurality of buffer portions connected to the plurality of metal lines and comprising a buffer wafer with a plurality of grooves and a metal filled in the plurality of grooves, a plurality of connection rods electrically connected to the plurality of buffer portions and penetrating the cap wafer from a top portion of the buffer portion, and a plurality of cap pads formed on a top surface of the cap wafer and electrically connected to a plurality of connection rods.