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32 条记录 (耗时 0.079 秒)

    Wafer level packaging cap and fabrication method thereof
    4.
    发明授权
    Wafer level packaging cap and fabrication method thereof 有权
    晶圆级封装盖及其制造方法

    公开(公告)号：US07449366B2

    公开(公告)日：2008-11-11

    申请号：US11365838

    申请日：2006-03-02

    申请人： Moon-chul Lee ,  Jong-oh Kwon ,  Woon-bae Kim ,  Ji-hyuk Lim ,  Suk-jin Ham ,  Jun-sik Hwang ,  Chang-youl Moon

    发明人： Moon-chul Lee ,  Jong-oh Kwon ,  Woon-bae Kim ,  Ji-hyuk Lim ,  Suk-jin Ham ,  Jun-sik Hwang ,  Chang-youl Moon

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00301 ,  B81B2207/095 ,  H01L21/4817 ,  H01L21/50 ,  H01L2924/16235

    摘要： A wafer level packaging cap for covering a device wafer with a device thereon and a fabrication method thereof are provided. The method includes operations of forming a plurality of connection grooves on a wafer, forming a seed layer on the connection grooves, forming connection parts by filling the connection grooves with a metal material, forming cap pads on a top surface of the wafer to be electrically connected to the connection parts, bonding a supporting film with the top surface of the wafer on which the cap pads are formed, forming a cavity on a bottom surface of the wafer to expose the connection parts through the cavity, and forming metal lines on the bottom surface of the wafer to be electrically connected to the connection parts.

    摘要翻译： 提供了一种用于在其上覆盖器件晶片的晶片级封装盖及其制造方法。 该方法包括在晶片上形成多个连接槽的操作，在连接槽上形成种子层，通过用金属材料填充连接槽来形成连接部分，在晶片的顶表面上形成电极盖 连接到连接部分，将支撑膜与其上形成有盖垫的晶片的顶表面接合，在晶片的底表面上形成空腔，以通过空腔露出连接部分，并在其上形成金属线 晶片的底表面电连接到连接部分。

    Wafer level package for surface acoustic wave device and fabrication method thereof
    8.
    发明申请
    Wafer level package for surface acoustic wave device and fabrication method thereof 有权
    用于表面声波器件的晶片级封装及其制造方法

    公开(公告)号：US20070096227A1

    公开(公告)日：2007-05-03

    申请号：US11415099

    申请日：2006-05-02

    申请人： Ji-hyuk Lim ,  Jun-sik Hwang ,  Woon-bae Kim ,  Suk-jin Ham ,  Jong-oh Kwon ,  Moon-chul Lee ,  Chang-youl Moon

    发明人： Ji-hyuk Lim ,  Jun-sik Hwang ,  Woon-bae Kim ,  Suk-jin Ham ,  Jong-oh Kwon ,  Moon-chul Lee ,  Chang-youl Moon

    IPC分类号： H01L29/84

    CPC分类号： H03H9/1092

    摘要： A wafer level package for a surface acoustic wave device and a fabrication method thereof include a SAW device formed with a SAW element on an upper surface of a device wafer; a cap wafer joined on an upper part of the SAW element; a cavity part housing the SAW element between the cap wafer and the SAW device; a cap pad formed on an upper surface of the cap wafer; and a metal line formed to penetrate through the cap wafer to electrically connect the cap pad and the SAW element, the device wafer and the cap wafer being made of the same materials.

    摘要翻译： 用于声表面波器件的晶片级封装及其制造方法包括在器件晶片的上表面上形成有SAW元件的SAW器件; 接合在所述SAW元件的上部的盖晶片; 在所述盖晶片和所述SAW器件之间容纳所述SAW元件的空腔部; 帽盖，形成在盖晶片的上表面上; 以及金属线，其形成为穿透盖晶片以电连接帽垫和SAW元件，器件晶片和盖晶片由相同的材料制成。

    Wafer level packaging cap and fabrication method thereof
    9.
    发明申请
    Wafer level packaging cap and fabrication method thereof 有权
    晶圆级封装盖及其制造方法

    公开(公告)号：US20070085195A1

    公开(公告)日：2007-04-19

    申请号：US11365838

    申请日：2006-03-02

    申请人： Moon-chul Lee ,  Jong-oh Kwon ,  Woon-bae Kim ,  Ji-hyuk Lim ,  Suk-jin Ham ,  Jun-sik Hwang ,  Chang-youl Moon

    发明人： Moon-chul Lee ,  Jong-oh Kwon ,  Woon-bae Kim ,  Ji-hyuk Lim ,  Suk-jin Ham ,  Jun-sik Hwang ,  Chang-youl Moon

    IPC分类号： H01L23/12

    CPC分类号： B81C1/00301 ,  B81B2207/095 ,  H01L21/4817 ,  H01L21/50 ,  H01L2924/16235

    摘要： A wafer level packaging cap for covering a device wafer with a device thereon and a fabrication method thereof are provided. The method includes operations of forming a plurality of connection grooves on a wafer, forming a seed layer on the connection grooves, forming connection parts by filling the connection grooves with a metal material, forming cap pads on a top surface of the wafer to be electrically connected to the connection parts, bonding a supporting film with the top surface of the wafer on which the cap pads are formed, forming a cavity on a bottom surface of the wafer to expose the connection parts through the cavity, and forming metal lines on the bottom surface of the wafer to be electrically connected to the connection parts.

    摘要翻译： 提供了一种用于在其上覆盖器件晶片的晶片级封装盖及其制造方法。 该方法包括在晶片上形成多个连接槽的操作，在连接槽上形成种子层，通过用金属材料填充连接槽来形成连接部分，在晶片的顶表面上形成电极盖 连接到连接部分，将支撑膜与其上形成有盖垫的晶片的顶表面接合，在晶片的底表面上形成空腔，以通过空腔露出连接部分，并在其上形成金属线 晶片的底表面电连接到连接部分。