公开(公告)号：US20170025468A1

公开(公告)日：2017-01-26

申请号：US15286392

申请日：2016-10-05

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Wu-Zang Yang ,  Chia-Ying Liu ,  Chih-Wei Hsiung ,  Chun-Yung Ai ,  Dyson H. Tai ,  Dominic Massetti

IPC: H01L27/146

CPC classification number: H01L27/14692 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L28/55 ,  H01L28/56 ,  H01L28/90

Abstract: A method of fabricating a pixel array includes forming a transistor network along a frontside of a semiconductor substrate. A contact element is formed for every pixel in the pixel array that is electrically coupled to a transistor within the transistor network. An interconnect layer is formed upon the frontside to control the transistor network with a dielectric that covers the contact element. A cavity is formed in the interconnect layer. A conductive layer is formed along cavity walls of the cavity and a dielectric layer is formed over the conductive layer within the cavity. A photosensitive semiconductor material is deposited over the dielectric layer within the cavity. An electrode cavity is formed that extends into the contact element. The electrode cavity is at least partially filled with a conductive material to form an electrode. The electrode, the conductive layer, and the photosensitive semiconductor material form a photosensitive capacitor.

Abstract translation: 制造像素阵列的方法包括沿着半导体衬底的前侧形成晶体管网络。 形成像素阵列中与晶体管网络内的晶体管电耦合的每个像素的接触元件。 在前侧形成互连层，以用覆盖接触元件的电介质来控制晶体管网络。 在互连层中形成空腔。 沿着空腔的空腔壁形成导电层，并且在腔内的导电层上形成电介质层。 感光半导体材料沉积在空腔内的电介质层上。 形成延伸到接触元件的电极腔。 电极腔至少部分地填充有导电材料以形成电极。 电极，导电层和感光半导体材料形成感光电容器。

公开(公告)号：US09490282B2

公开(公告)日：2016-11-08

申请号：US14662655

申请日：2015-03-19

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Wu-Zang Yang ,  Chia-Ying Liu ,  Chih-Wei Hsiung ,  Chun-Yung Ai ,  Dyson H. Tai ,  Dominic Massetti

IPC: H01L27/14 ,  H01L27/146

CPC classification number: H01L27/14692 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L28/55 ,  H01L28/56 ,  H01L28/90

Abstract: An image sensor pixel, and image sensor, and a method of fabricating the same is disclosed. The image pixel includes a photosensitive capacitor and a transistor network. The photosensitive capacitor includes an electrode, a conductive layer, a dielectric layer, and a photosensitive semiconductor material. The conductive layer is disposed around the electrode and the dielectric layer is formed between the conductive layer and the electrode. The photosensitive semiconductor material is for generating an image signal in response to image light and is disposed between the dielectric layer and the electrode. The transistor network is coupled to readout the image signal from the electrode of the photosensitive capacitor.

Abstract translation: 公开了一种图像传感器像素和图像传感器及其制造方法。 图像像素包括光敏电容器和晶体管网络。 感光电容器包括电极，导电层，电介质层和光敏半导体材料。 导电层设置在电极周围，并且介电层形成在导电层和电极之间。 感光半导体材料用于响应于图像光产生图像信号，并且设置在电介质层和电极之间。 晶体管网络被耦合以从光敏电容器的电极读出图像信号。

公开(公告)号：US09443899B1

公开(公告)日：2016-09-13

申请号：US14932472

申请日：2015-11-04

Applicant: OmniVision Technologies, Inc.

Inventor： Chia-Ying Liu ,  Chin-Poh Pang ,  Chih-Wei Hsiung ,  Vincent Venezia

IPC: H01L27/146 ,  H04N5/369

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14685

Abstract: An improved back side illuminated (BSI) complementary metal oxide semiconductor (CMOS) image sensor, and associated methods, improve phase detecting capability. The BSI CMOS image sensor has an array of pixels that include a phase detecting pixel (PDP), a composite grid formed of a buried color filter array and composite metal/oxide grid, and a photodiode implant corresponding to the PDP. A PDP mask is fabricated with a deep trench isolation (DTI) structure proximate the PDP and positioned to mask at least part of the photodiode implant such that the PDP mask is positioned between the composite grid and the photodiode implant.

Abstract translation: 改进的背面照明（BSI）互补金属氧化物半导体（CMOS）图像传感器及相关方法，提高相位检测能力。 BSI CMOS图像传感器具有包括相位检测像素（PDP），由掩埋滤色器阵列和复合金属/氧化物栅格形成的复合栅格和对应于PDP的光电二极管注入的像素阵列。 制造具有靠近PDP的深沟槽隔离（DTI）结构的PDP掩模，并且定位成掩模至少部分光电二极管注入，使得PDP掩模位于复合栅格和光电二极管植入物之间。

公开(公告)号：US09431452B1

公开(公告)日：2016-08-30

申请号：US14711575

申请日：2015-05-13

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chia-Ying Liu ,  Chih-Wei Hsiung

IPC: H01L31/062 ,  H01L31/113 ,  H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464

Abstract: An image sensor includes a photodiode proximate to a front side of semiconductor material to accumulate image charge. A metal layer reflector structure is disposed in a dielectric layer proximate to the front side of the semiconductor material. A contact reflecting ring structure is disposed in the dielectric layer between the metal layer reflector structure and a contact etch stop layer disposed over the front side of the semiconductor material. The contact reflecting ring structure defines a portion of a light guide in the dielectric layer such that light that is directed through a back side of the semiconductor material, through the photodiode, and reflected from the metal layer reflector structure back through the photodiode is confined to remain within an interior of the contact reflecting ring structure when passing through the dielectric layer between the photodiode and the metal layer reflector structure.

Abstract translation: 图像传感器包括靠近半导体材料的前侧的光电二极管，以累积图像电荷。 金属层反射器结构设置在靠近半导体材料的前侧的电介质层中。 接触反射环结构设置在金属层反射器结构和设置在半导体材料的前侧之上的接触蚀刻停止层之间的电介质层中。 接触反射环结构限定了电介质层中光导的一部分，使得通过半导体材料的背面穿过光电二极管并从金属层反射器结构反射回通过光电二极管的光被限制在 当通过光电二极管和金属层反射器结构之间的介电层时，保持在接触反射环结构的内部。

公开(公告)号：US09276029B1

公开(公告)日：2016-03-01

申请号：US14601016

申请日：2015-01-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chen-Wei Lu ,  Chia-Ying Liu ,  Yin Qian ,  Jin Li

IPC: H01L31/0232 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645

Abstract: A color image sensor includes a plurality of pixel cells arranged in a pixel array. A plurality of color filters is arranged in a color filter array disposed over the pixel array. Each color filter is aligned with a corresponding underlying pixel cell. An optical isolation grid is disposed over the color filter array such that incident light is directed through the optical isolation grid prior to be being directed through the color filter array to the pixel array. The optical isolation grid includes a plurality of sidewalls arranged to define a plurality of openings in the optical isolation grid. Each opening is aligned with a corresponding color filter such that each color filter is optically isolated by the optical isolation grid to receive incident light only through a corresponding aligned one of the plurality of openings.

Abstract translation: 彩色图像传感器包括以像素阵列排列的多个像素单元。 多个滤色器布置在设置在像素阵列上的滤色器阵列中。 每个滤色器与相应的底层像素单元对齐。 光学隔离栅格设置在滤色器阵列上方，使得入射光在被引导通过滤色器阵列到像素阵列之前被引导通过光隔离栅格。 光隔离栅格包括多个侧壁，其布置成在光隔离栅格中限定多个开口。 每个开口与相应的滤色器对准，使得每个滤色器通过光学隔离栅格光学隔离，以仅通过多个开口中的相应对准的一个开口接收入射光。