公开(公告)号：US20210391363A1

公开(公告)日：2021-12-16

申请号：US16901894

申请日：2020-06-15

Applicant: OmniVision Technologies, Inc.

Inventor： Chun-Yung Ai ,  Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Vincent Venezia

IPC: H01L27/146 ,  G03B13/36

Abstract: A multi-pixel detector of an image sensor is described. The multi-pixel detector includes a first photodiode region disposed within a semiconductor substrate to form a first pixel, a second photodiode region disposed within the semiconductor substrate to form a second pixel adjacent to the first pixel, and a partial isolation structure extending from a first side of the semiconductor substrate towards a second side of the semiconductor substrate between the first photodiode region and the second photodiode region. A length of a lateral portion of the partial isolation structure between the first photodiode region and the second photodiode region is less than a lateral length of the first photodiode region.

公开(公告)号：US20200045223A1

公开(公告)日：2020-02-06

申请号：US16597901

申请日：2019-10-10

Applicant: OmniVision Technologies, Inc.

Inventor： Chin Poh Pang ,  Chen-Wei Lu ,  Shao-Fan Kao ,  Chun-Yung Ai ,  Yin Qian ,  Dyson Tai ,  Qingwei Shan ,  Lindsay Grant

IPC: H04N5/232 ,  H01L27/146

Abstract: An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by two micro-lenses, respectively. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, wherein each of the second image sensor pixels is covered by an individual micro-lens. A coating layer is disposed on the micro-lenses and forms a flattened surface across the whole image sensor pixel array. A PDAF micro-lens is formed on the coating layer to cover the first image sensor pixels.

公开(公告)号：US20180076247A1

公开(公告)日：2018-03-15

申请号：US15264411

申请日：2016-09-13

Applicant: OmniVision Technologies, Inc.

Inventor： Chin-Poh Pang ,  Boyang Zhang ,  Chia-Ying Liu ,  Wu-Zang Yang ,  Chih-Wei Hsiung ,  Chun-Yung Ai

IPC: H01L27/146 ,  H04N5/374 ,  H04N9/04

CPC classification number: H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H04N5/374 ,  H04N9/045

Abstract: A backside-illuminated color image sensor with crosstalk-suppressing color filter array includes (a) a silicon layer including an array of photodiodes and (b) a color filter layer on the light-receiving surface of the silicon layer, wherein the color filter layer includes (i) an array of color filters cooperating with the array of photodiodes to form a respective array of color pixels and (ii) a light barrier grid disposed between the color filters to suppress transmission of light between adjacent ones of the color filters. The light barrier is spatially non-uniform across the color filter layer to account for variation of chief ray angle across the array of color filters

公开(公告)号：US09520431B2

公开(公告)日：2016-12-13

申请号：US14505923

申请日：2014-10-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Wei Zheng ,  Chia-Ying Liu ,  Chun-Yung Ai ,  Wu-Zang Yang ,  Chih-Wei Hsiung ,  Chen-Wei Lu

IPC: H01L27/00 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor includes a semiconductor layer with a plurality of photodiodes. A plurality of isolation structures is disposed in the back side of the semiconductor layer between individual photodiodes in the plurality of photodiodes. The plurality of isolation structures extend into the back side of the semiconductor layer a first depth and extend out of the back side of the semiconductor layer a first length. A plurality of light filters is disposed proximate to the back side of the semiconductor layer such that the plurality of isolation structures is disposed between individual light filters in the plurality of light filters. An antireflection coating is also disposed between the semiconductor layer and the plurality of light filters.

Abstract translation: 图像传感器包括具有多个光电二极管的半导体层。 多个隔离结构设置在多个光电二极管中的各个光电二极管之间的半导体层的背面。 多个隔离结构延伸到半导体层的背面第一深度并从半导体层的后侧延伸出第一长度。 多个滤光器设置在半导体层的背面附近，使得多个隔离结构设置在多个滤光器中的各个滤光器之间。 在半导体层和多个滤光器之间还设置防反射涂层。