公开(公告)号：US09834859B2

公开(公告)日：2017-12-05

申请号：US14371607

申请日：2013-01-10

Applicant: OSAKA UNIVERSITY

Inventor： Yusuke Mori ,  Mamoru Imade ,  Masashi Yoshimura ,  Mihoko Hirao ,  Masayuki Imanishi

IPC: C30B19/02 ,  C30B19/12 ,  H01L21/02 ,  C30B29/40 ,  H01L29/20 ,  H01L33/00

CPC classification number: C30B19/02 ,  C30B19/12 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02625 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02647 ,  H01L29/2003 ,  H01L33/007

Abstract: The present invention provides a method for producing a Group III nitride crystal, capable of producing a Group III nitride crystal in a large size with few defects and high quality. The method is a method for producing a Group III nitride crystal (13), including: a seed crystal selection step of selecting plural parts of a Group III nitride crystal layer (11) as seed crystals for generation and growth of Group III nitride crystals (13); a contact step of causing the surfaces of the seed crystals to be in contact with an alkali metal melt; a crystal growth step of causing a Group III element and nitrogen to react with each other under a nitrogen-containing atmosphere in the alkali metal melt to generate and grow the Group III nitride crystals (13), wherein the seed crystals are hexagonal crystals, in the seed crystal selection step, the seed crystals are arranged so that m-planes of the respective crystals grown from the seed crystals that are adjacent to each other do not substantially coincide with each other, and in the crystal growth step, the plural Group III nitride crystals (13) grown from the plural seed crystals by the growth of the Group III nitride crystals (13) are bound.

公开(公告)号：US11753739B2

公开(公告)日：2023-09-12

申请号：US17479516

申请日：2021-09-20

Applicant: OSAKA UNIVERSITY ,  PANASONIC HOLDINGS CORPORATION

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Akira Kitamoto ,  Junichi Takino ,  Tomoaki Sumi

IPC: C30B25/16 ,  C30B29/40

CPC classification number: C30B25/165 ,  C30B29/403

Abstract: A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.

公开(公告)号：US11220759B2

公开(公告)日：2022-01-11

申请号：US16783229

申请日：2020-02-06

Applicant: OSAKA UNIVERSITY ,  Panasonic Corporation

Inventor： Yusuke Mori ,  Masayuki Imanishi ,  Masashi Yoshimura ,  Kousuke Murakami ,  Shinsuke Komatsu ,  Masahiro Tada ,  Yoshio Okayama

IPC: C30B19/10 ,  C30B19/12 ,  C30B19/02 ,  C30B29/40

Abstract: A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.

公开(公告)号：US10927476B2

公开(公告)日：2021-02-23

申请号：US16243321

申请日：2019-01-09

Applicant: OSAKA UNIVERSITY ,  Panasonic Corporation

Inventor： Yusuke Mori ,  Masayuki Imanishi ,  Masashi Yoshimura ,  Kousuke Murakami ,  Yoshio Okayama

IPC: C30B9/02 ,  C30B19/02 ,  C30B19/10 ,  C30B29/40

Abstract: A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.

公开(公告)号：US10309036B2

公开(公告)日：2019-06-04

申请号：US15555004

申请日：2016-02-18

Applicant: OSAKA UNIVERSITY ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Mamoru Imade ,  Masatomo Shibata ,  Takehiro Yoshida

IPC: C30B23/02 ,  C30B19/02 ,  C30B25/20 ,  C30B29/40 ,  H01L21/02

Abstract: A method for manufacturing a group III nitride semiconductor crystal substrate includes providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method, and homoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate. The principal surface of the seed crystal substrate is a +c-plane, and the seed crystal substrate has an atomic oxygen concentration of not more than 1×1017 cm−3 in a crystal near the principal surface over an entire in-plane region thereof.

公开(公告)号：US10145022B2

公开(公告)日：2018-12-04

申请号：US15622427

申请日：2017-06-14

Applicant: OSAKA UNIVERSITY ,  Panasonic Corporation

Inventor： Yusuke Mori ,  Mamoru Imade ,  Shinsuke Komatsu ,  Michirou Yoshino

IPC: C30B9/12 ,  C30B35/00 ,  C30B29/40

Abstract: A crystal growth apparatus includes: a raw material supplying part that mixes raw materials including a group III element metal and an alkali metal; a growing part disposed at a stage under the raw material supplying part, the growing part having a seed substrate; a tilting mechanism that tilts the raw material supplying part and the growing part; a heater that heats the raw material supplying part and the growing part; a control part that controls an operation of the tilting mechanism; and a supply port that supplies a nitrogen element-containing substance to the growing part, wherein the raw material supplying part having an opening facing to the growing part, the opening being disposed at a bottom portion and one edge portion of the raw material supplying part, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the other edge portion on the side opposite to the one edge portion so as to prevent the raw materials from entering the opening when the raw materials are mixed, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the one edge portion so that the raw materials drop through the opening to the growing part when the mixing of the raw materials is completed.

公开(公告)号：US11155931B2

公开(公告)日：2021-10-26

申请号：US16776647

申请日：2020-01-30

Applicant: OSAKA UNIVERSITY ,  Panasonic Corporation

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Akira Kitamoto ,  Junichi Takino ,  Tomoaki Sumi

IPC: C30B25/16 ,  C30B29/40

Abstract: A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.

公开(公告)号：US10260165B2

公开(公告)日：2019-04-16

申请号：US15398319

申请日：2017-01-04

Applicant: OSAKA UNIVERSITY ,  SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Mamoru Imade ,  Masayuki Imanishi ,  Masatomo Shibata ,  Takehiro Yoshida

IPC: C30B25/18 ,  C30B19/12 ,  C30B19/02 ,  C30B29/40 ,  H01L21/02

Abstract: There is provided a method for manufacturing a nitride crystal substrate, including: arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other; growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film; growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; and growing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth.