公开(公告)号：US20100078707A1

公开(公告)日：2010-04-01

申请号：US12241925

申请日：2008-09-30

申请人： Oliver Haeberlen ,  Joachim Krumrey ,  Franz Hirler ,  Walter Rieger

发明人： Oliver Haeberlen ,  Joachim Krumrey ,  Franz Hirler ,  Walter Rieger

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L27/0629 ,  H01L29/0623 ,  H01L29/0834 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7803 ,  H01L29/7805

摘要： A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate electrode and a second field-effect structure including a second insulated gate electrode which is electrically connected to the source metallization. The capacitance per unit area between the second insulated gate electrode and the body region is larger than the capacitance per unit area between the first insulated gate electrode and the body region.

摘要翻译： 半导体器件包括源极金属化，与源极金属化接触的第一导电类型的源极区域，与源极区域相邻的第二导电类型的主体区域。 半导体器件还包括第一场效应结构，其包括第一绝缘栅电极和第二场效应结构，第二场效应结构包括与源极金属化电连接的第二绝缘栅电极。 第二绝缘栅电极和体区之间的每单位面积的电容大于第一绝缘栅极与体区之间的每单位面积的电容。

公开(公告)号：US08618598B2

公开(公告)日：2013-12-31

申请号：US13183872

申请日：2011-07-15

申请人： Oliver Haeberlen ,  Joachim Krumrey ,  Franz Hirler ,  Walter Rieger

发明人： Oliver Haeberlen ,  Joachim Krumrey ,  Franz Hirler ,  Walter Rieger

IPC分类号： H01L29/78 ,  H01L29/772

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L27/0629 ,  H01L29/0623 ,  H01L29/0834 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7803 ,  H01L29/7805

摘要： A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate electrode and a second field-effect structure including a second insulated gate electrode which is electrically connected to the source metallization. The capacitance per unit area between the second insulated gate electrode and the body region is larger than the capacitance per unit area between the first insulated gate electrode and the body region.

摘要翻译： 半导体器件包括源极金属化，与源极金属化接触的第一导电类型的源极区域，与源极区域相邻的第二导电类型的主体区域。 半导体器件还包括第一场效应结构，其包括第一绝缘栅电极和第二场效应结构，第二场效应结构包括与源极金属化电连接的第二绝缘栅电极。 第二绝缘栅电极和体区之间的每单位面积的电容大于第一绝缘栅极与体区之间的每单位面积的电容。

公开(公告)号：US08022474B2

公开(公告)日：2011-09-20

申请号：US12241925

申请日：2008-09-30

申请人： Oliver Haeberlen ,  Joachim Krumrey ,  Franz Hirler ,  Walter Rieger

发明人： Oliver Haeberlen ,  Joachim Krumrey ,  Franz Hirler ,  Walter Rieger

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L27/0629 ,  H01L29/0623 ,  H01L29/0834 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7803 ,  H01L29/7805

摘要： A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate electrode and a second field-effect structure including a second insulated gate electrode which is electrically connected to the source metallization. The capacitance per unit area between the second insulated gate electrode and the body region is larger than the capacitance per unit area between the first insulated gate electrode and the body region.

摘要翻译： 半导体器件包括源极金属化，与源极金属化接触的第一导电类型的源极区域，与源极区域相邻的第二导电类型的主体区域。 半导体器件还包括第一场效应结构，其包括第一绝缘栅电极和第二场效应结构，第二场效应结构包括与源极金属化电连接的第二绝缘栅电极。 第二绝缘栅电极和体区之间的每单位面积的电容大于第一绝缘栅极与体区之间的每单位面积的电容。

公开(公告)号：US20110210377A1

公开(公告)日：2011-09-01

申请号：US12713336

申请日：2010-02-26

申请人： Oliver Haeberlen ,  Walter Rieger

发明人： Oliver Haeberlen ,  Walter Rieger

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/7787 ,  H01L27/0605 ,  H01L27/085 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/7786

摘要： A semiconductor device is described. In one embodiment, the device includes a Group-III nitride channel layer and a Group-III nitride barrier layer on the Group-III nitride channel layer, wherein the Group-III nitride barrier layer includes a first portion and a second portion, the first portion having a thickness less than the second portion. A p-doped Group-III nitride gate layer section is arranged at least on the first portion of the Group-III nitride barrier layer and a gate contact formed on the p-doped Group-III nitride gate layer.

摘要翻译： 描述半导体器件。 在一个实施例中，该器件包括III族氮化物沟道层上的III族氮化物沟道层和III族氮化物阻挡层，其中III族氮化物阻挡层包括第一部分和第二部分，第一部分 部分具有小于第二部分的厚度。 至少在III族氮化物阻挡层的第一部分和形成在p掺杂III族氮化物栅极层上的栅极接触上布置p掺杂的III族氮化物栅极层部分。

公开(公告)号：US20120028417A1

公开(公告)日：2012-02-02

申请号：US13268097

申请日：2011-10-07

申请人： Franz Hirler ,  Oliver Haeberlen ,  Walter Rieger

发明人： Franz Hirler ,  Oliver Haeberlen ,  Walter Rieger

IPC分类号： H01L21/78

CPC分类号： H01L29/7802 ,  H01L23/4824 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/7397 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component comprises a semiconductor body comprising a first component electrode arranged on one of the surfaces of the semiconductor body, a second component electrode arranged on one of the surfaces of the semiconductor body, and a component control electrode arranged on one of the surfaces of the semiconductor body. In this case, active semiconductor element cells are arranged in a first active cell array of the semiconductor body, the semiconductor element cells comprising a first cell electrode, a second cell electrode and a cell control electrode and also a drift path between the cell electrodes. At least the component control electrode is arranged on a partial region of the semiconductor body and a second active cell array is additionally situated in the partial region of the semiconductor body below the component control electrode.

摘要翻译： 半导体部件包括半导体本体，其包括布置在半导体主体的一个表面上的第一部件电极，布置在半导体主体的一个表面上的第二部件电极和布置在半导体主体的一个表面上的部件控制电极 半导体体。 在这种情况下，有源半导体元件单元被布置在半导体本体的第一有源单元阵列中，半导体元件单元包括第一单元电极，第二单元电极和单元控制电极，以及单元电极之间的漂移路径。 至少部件控制电极布置在半导体本体的部分区域上，并且第二有源电池阵列另外位于半导体本体的部件控制电极下方的部分区域中。

公开(公告)号：US20070093019A1

公开(公告)日：2007-04-26

申请号：US11527743

申请日：2006-09-26

申请人： Walter Rieger ,  Paul Ganitzer ,  Oliver Haeberlen ,  Franz Hirler ,  Markus Zundel ,  Rudolf Zelsacher ,  Erwin Bacher

发明人： Walter Rieger ,  Paul Ganitzer ,  Oliver Haeberlen ,  Franz Hirler ,  Markus Zundel ,  Rudolf Zelsacher ,  Erwin Bacher

IPC分类号： H01L21/8242 ,  H01L21/76

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L29/086 ,  H01L29/0869 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/456 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397

摘要： Method for producing a connection electrode for two semiconductor zones arranged one above another The invention relates to a method for producing a connection electrode for a first semiconductor zone and a second semiconductor zone, which are arranged one above another and are doped complementarily with respect to one another, which method comprises the method steps of: producing a trench extending through the first semiconductor zone right into the second semiconductor zone in such a way that the first semiconductor zone is uncovered at sidewalls of the trench and the second semiconductor zone is uncovered at least at a bottom of the trench, applying a protective layer to one of the first and second semiconductor zones in the trench, producing a first connection zone in the other of the two semiconductor zones, which is not covered by the protective layer, by introducing dopant atoms into this other semiconductor zone via the trench, the connection zone being of the same conductivity type as said other semiconductor zone, but doped more highly, depositing an electrode layer at least onto the sidewalls and the bottom of the trench for the purpose of producing the connection electrode.

摘要翻译： 一种制造用于两个半导体区域的连接电极的方法本发明涉及一种用于制造用于第一半导体区域和第二半导体区域的连接电极的方法，所述连接电极被布置在另一个之上，并且相对于一个 另一方面，该方法包括以下方法步骤：产生通过第一半导体区域直接进入第二半导体区域的沟槽，使得第一半导体区域在沟槽的侧壁处未被覆盖，并且至少覆盖第二半导体区域 在沟槽的底部，在沟槽中的第一和第二半导体区域中的一个上施加保护层，在两个半导体区域中的另一个半导体区域中的第一连接区域中，未被保护层覆盖，通过引入掺杂剂 原子通过沟槽进入该另一半导体区，连接区具有相同的导电性 类型作为所述另一半导体区，但是掺杂更高，至少在沟槽的侧壁和底部上沉积电极层以产生连接电极。

公开(公告)号：US08389362B2

公开(公告)日：2013-03-05

申请号：US13268097

申请日：2011-10-07

申请人： Franz Hirler ,  Oliver Haeberlen ,  Walter Rieger

发明人： Franz Hirler ,  Oliver Haeberlen ,  Walter Rieger

IPC分类号： H01L21/8236

CPC分类号： H01L29/7802 ,  H01L23/4824 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/7397 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component comprises a semiconductor body comprising a first component electrode arranged on one of the surfaces of the semiconductor body, a second component electrode arranged on one of the surfaces of the semiconductor body, and a component control electrode arranged on one of the surfaces of the semiconductor body. In this case, active semiconductor element cells are arranged in a first active cell array of the semiconductor body, the semiconductor element cells comprising a first cell electrode, a second cell electrode and a cell control electrode and also a drift path between the cell electrodes. At least the component control electrode is arranged on a partial region of the semiconductor body and a second active cell array is additionally situated in the partial region of the semiconductor body below the component control electrode.

摘要翻译： 半导体部件包括半导体本体，其包括布置在半导体主体的一个表面上的第一部件电极，布置在半导体主体的一个表面上的第二部件电极和布置在半导体主体的一个表面上的部件控制电极 半导体体。 在这种情况下，有源半导体元件单元被布置在半导体本体的第一有源单元阵列中，半导体元件单元包括第一单元电极，第二单元电极和单元控制电极，以及单元电极之间的漂移路径。 至少部件控制电极布置在半导体本体的部分区域上，并且第二有源电池阵列另外位于半导体本体的部件控制电极下方的部分区域中。

公开(公告)号：US08067796B2

公开(公告)日：2011-11-29

申请号：US12032725

申请日：2008-02-18

申请人： Franz Hirler ,  Oliver Haeberlen ,  Walter Rieger

发明人： Franz Hirler ,  Oliver Haeberlen ,  Walter Rieger

IPC分类号： H01L29/66

CPC分类号： H01L29/7802 ,  H01L23/4824 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/7397 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component comprises a semiconductor body comprising a first component electrode arranged on one of the surfaces of the semiconductor body, a second component electrode arranged on one of the surfaces of the semiconductor body, and a component control electrode arranged on one of the surfaces of the semiconductor body. In this case, active semiconductor element cells are arranged in a first active cell array of the semiconductor body, the semiconductor element cells comprising a first cell electrode, a second cell electrode and a cell control electrode and also a drift path between the cell electrodes. At least the component control electrode is arranged on a partial region of the semiconductor body and a second active cell array is additionally situated in the partial region of the semiconductor body below the component control electrode.

摘要翻译： 半导体部件包括半导体本体，其包括布置在半导体主体的一个表面上的第一部件电极，布置在半导体主体的一个表面上的第二部件电极和布置在半导体主体的一个表面上的部件控制电极 半导体体。 在这种情况下，有源半导体元件单元被布置在半导体本体的第一有源单元阵列中，半导体元件单元包括第一单元电极，第二单元电极和单元控制电极，以及单元电极之间的漂移路径。 至少部件控制电极布置在半导体本体的部分区域上，并且第二有源电池阵列另外位于半导体本体的部件控制电极下方的部分区域中。

公开(公告)号：US20110147796A1

公开(公告)日：2011-06-23

申请号：US12641130

申请日：2009-12-17

申请人： Oliver Haeberlen ,  Walter Rieger ,  Christoph Kadow ,  Markus Zundel

发明人： Oliver Haeberlen ,  Walter Rieger ,  Christoph Kadow ,  Markus Zundel

IPC分类号： H01L29/778 ,  H01L21/762 ,  H01L21/02 ,  H01L21/20

CPC分类号： H01L21/4871 ,  H01L21/76879 ,  H01L29/0626 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/66462 ,  H01L29/7787 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor device including a metal carrier substrate. Above the carrier substrate a first semiconductor layer of Alx1Gay1Inz1N (x1+y1+z1=1, x1≧0, y1≧0, z1≧0) is formed. A second semiconductor layer of Alx2Gay2Inz2N (x2+y2+z2=1, x2>x1, y2≧0, z2≧0) is arranged on the first semiconductor layer and a gate region is arranged on the second semiconductor layer. The semiconductor device furthermore includes a source region and a drain region, wherein one of these regions is electrically coupled to the metal carrier substrate and includes a conductive region extending through the first semiconductor layer.

摘要翻译： 包括金属载体基板的半导体装置。 在载体基板上形成Al x1Gay1Inz1N（x1 + y1 + z1 = 1，x1≥0，y1≥0，z1≥0）的第一半导体层。 Alx2Gay2Inz2N（x2 + y2 + z2 = 1，x2> x1，y2≥0，z2≥0）的第二半导体层布置在第一半导体层上，并且在第二半导体层上布置栅极区。 该半导体器件还包括源极区和漏极区，其中这些区中的一个电耦合到金属载体衬底并且包括延伸穿过第一半导体层的导电区。

公开(公告)号：US07851349B2

公开(公告)日：2010-12-14

申请号：US11527743

申请日：2006-09-26

申请人： Walter Rieger ,  Paul Ganitzer ,  Oliver Haeberlen ,  Franz Hirler ,  Markus Zundel ,  Rudolf Zelsacher ,  Erwin Bacher

发明人： Walter Rieger ,  Paul Ganitzer ,  Oliver Haeberlen ,  Franz Hirler ,  Markus Zundel ,  Rudolf Zelsacher ,  Erwin Bacher

IPC分类号： H01L21/283

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L29/086 ,  H01L29/0869 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/456 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397

摘要： A method for producing a connection electrode for a first semiconductor zone and a second semiconductor zone includes producing a trench extending through the first semiconductor zone right into the second semiconductor zone in such a way that the first semiconductor zone is uncovered at sidewalls of the trench and the second semiconductor zone is uncovered at least at a bottom of the trench. The method also includes applying a protective layer to a first one of the first and second semiconductor zones in the trench, and producing a first connection zone in the second of the two semiconductor zones, which is not covered by the protective layer. The method further includes depositing an electrode layer at least onto the sidewalls and the bottom of the trench for the purpose of producing the connection electrode.

摘要翻译： 一种用于制造用于第一半导体区和第二半导体区的连接电极的方法包括制造在第二半导体区内延伸通过第一半导体区的沟槽，使得第一半导体区未被覆盖在沟槽的侧壁处， 至少在沟槽的底部露出第二半导体区域。 该方法还包括向沟槽中的第一和第二半导体区域中的第一个施加保护层，并且在两个半导体区域中的第二个半导体区域中产生未被保护层覆盖的第一连接区域。 该方法还包括至少将电极层沉积到沟槽的侧壁和底部上，以产生连接电极。