公开(公告)号：US20140369367A1

公开(公告)日：2014-12-18

申请号：US13920248

申请日：2013-06-18

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer ,  John E. Northrup ,  Mark R. Teepe ,  Zhihong Yang ,  Christopher L. Chua ,  Noble M. Johnson

IPC: H01S5/343 ,  H01S5/34

CPC classification number: H01S5/343 ,  H01S5/0035 ,  H01S5/0207 ,  H01S5/0261 ,  H01S5/04 ,  H01S5/0425 ,  H01S5/3211 ,  H01S5/3401 ,  H01S5/342 ,  H01S5/34333 ,  H01S2301/176

Abstract: A semiconductor light emitting device includes a light guiding structure, a light emitting layer disposed within the light guiding structure, and a structure for discharging excess electric charge within the device. The device may be excited by an electron beam, as opposed to an optical beam, to create electron-hole pairs. The light emitting layer is configured for light generation without requiring a p-n junction, and is therefore not embedded within nor part of a p-n junction. Doping with p-type species is obviated, reducing device loss and permitting operation at a short wavelengths, such as below 300 nm. Various structures, such as a top-side cladding layer, are disclosed for discharging beam-induced charge. A single device may be operated with multiple electron beam pumps, either to enable a relatively thick active layer or to drive multiple separate active layers. Cooperatively curved end facets accommodate for possible off-axis resonance within the active region(s).

Abstract translation: 半导体发光器件包括导光结构，设置在导光结构内的发光层，以及用于在器件内放电多余电荷的结构。 与光束相反，器件可能被电子束激发，以产生电子 - 空穴对。 发光层被配置用于光生成而不需要p-n结，并且因此不嵌入在p-n结的内部或部分内。 消除p型物质的掺杂，减少器件损耗并允许在短波长（如300nm以下）下进行工作。 公开了诸如顶侧包覆层的各种结构，用于放电束诱导的电荷。 单个设备可以用多个电子束泵操作，以使得能够相对较厚的有源层或驱动多个分离的有源层。 合作弯曲的端面适合有源区域内的可能的离轴共振。

公开(公告)号：US11827037B2

公开(公告)日：2023-11-28

申请号：US17408814

申请日：2021-08-23

Applicant: Palo Alto Research Center Incorporated

Inventor： Joerg Martini ,  Christopher Chua ,  Zhihong Yang ,  Mark Teepe ,  Patrick Y. Maeda ,  Sourobh Raychaudhuri ,  Elif Karatay ,  Noble M. Johnson ,  David K. Biegelsen ,  Joseph Lee

IPC: H01S5/042 ,  H01S5/40 ,  H01S5/42 ,  H01S5/183 ,  B41J2/44 ,  B41J2/45 ,  B41J2/455 ,  B41J2/47 ,  G02B19/00

CPC classification number: B41J2/455 ,  B41J2/442 ,  B41J2/47 ,  G02B19/0014 ,  G02B19/0057 ,  H01S5/042 ,  H01S5/18394 ,  H01S5/4025 ,  H01S5/423

Abstract: A laser imager for a printing system, comprising a plurality of independently addressable surface emitting lasers arranged in a linear array on a common substrate chip and including a common cathode and a dedicated control channel associated with an address trace line for each laser of the plurality of independently addressable surface emitting lasers, and optical elements arranged in a linear lens array configured to capture and focus light from the plurality of independently addressable surface emitting lasers onto a imaging member, wherein the plurality of independently addressable surface emitting lasers arranged in a linear array and the optical elements arranged in a linear lens array operate together to image the imaging member.

公开(公告)号：US20230055149A1

公开(公告)日：2023-02-23

申请号：US17408814

申请日：2021-08-23

Applicant: Palo Alto Research Center Incorporated

Inventor： Joerg Martini ,  Christopher Chua ,  Zhihong Yang ,  Mark Teepe ,  Patrick Y. Maeda ,  Sourobh Raychaudhuri ,  Elif Karatay ,  Noble M. Johnson ,  David K. Biegelsen ,  Joseph Lee

IPC: B41J2/47 ,  B41J2/455

Abstract: A laser imager for a printing system, comprising a plurality of independently addressable surface emitting lasers arranged in a linear array on a common substrate chip and including a common cathode and a dedicated control channel associated with an address trace line for each laser of the plurality of independently addressable surface emitting lasers, and optical elements arranged in a linear lens array configured to capture and focus light from the plurality of independently addressable surface emitting lasers onto a imaging member, wherein the plurality of independently addressable surface emitting lasers arranged in a linear array and the optical elements arranged in a linear lens array operate together to image the imaging member.

公开(公告)号：US08964796B2

公开(公告)日：2015-02-24

申请号：US13920248

申请日：2013-06-18

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer ,  John E. Northrup ,  Mark R. Teepe ,  Zhihong Yang ,  Christopher L. Chua ,  Noble M. Johnson

IPC: H01S3/30 ,  H01S5/343 ,  H01S5/34

CPC classification number: H01S5/343 ,  H01S5/0035 ,  H01S5/0207 ,  H01S5/0261 ,  H01S5/04 ,  H01S5/0425 ,  H01S5/3211 ,  H01S5/3401 ,  H01S5/342 ,  H01S5/34333 ,  H01S2301/176

Abstract: A semiconductor light emitting device includes a light guiding structure, a light emitting layer disposed within the light guiding structure, and a structure for discharging excess electric charge within the device. The device may be excited by an electron beam, as opposed to an optical beam, to create electron-hole pairs. The light emitting layer is configured for light generation without requiring a p-n junction, and is therefore not embedded within nor part of a p-n junction. Doping with p-type species is obviated, reducing device loss and permitting operation at a short wavelengths, such as below 300 nm. Various structures, such as a top-side cladding layer, are disclosed for discharging beam-induced charge. A single device may be operated with multiple electron beam pumps, either to enable a relatively thick active layer or to drive multiple separate active layers. Cooperatively curved end facets accommodate for possible off-axis resonance within the active region(s).

Abstract translation: 半导体发光器件包括导光结构，设置在导光结构内的发光层，以及用于在器件内放电多余电荷的结构。 与光束相反，器件可能被电子束激发，以产生电子 - 空穴对。 发光层被配置用于光生成而不需要p-n结，并且因此不嵌入在p-n结的内部或部分内。 消除p型物质的掺杂，减少器件损耗并允许在短波长（如300nm以下）下进行工作。 公开了诸如顶侧包覆层的各种结构，用于放电束诱导的电荷。 单个设备可以用多个电子束泵操作，以使得能够相对较厚的有源层或驱动多个分离的有源层。 合作弯曲的端面适合有源区域内的可能的离轴共振。