公开(公告)号：US09881960B2

公开(公告)日：2018-01-30

申请号：US14556093

申请日：2014-11-28

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yoshihiro Sato ,  Ryohei Miyagawa ,  Tokuhiko Tamaki ,  Junji Hirase ,  Yoshiyuki Ohmori ,  Yoshiyuki Matsunaga

IPC: H01L27/146 ,  H04N5/363 ,  H04N5/378 ,  H01L21/266 ,  H01L21/8234

CPC classification number: H01L27/14643 ,  H01L21/266 ,  H01L21/823456 ,  H01L21/823481 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14665 ,  H01L27/14689 ,  H04N5/363 ,  H04N5/378

Abstract: Each unit pixel includes a photoelectric converter, an n-type impurity region forming an accumulation diode together with the semiconductor region, the accumulation diode accumulating a signal charge generated by the photoelectric converter, an amplifier transistor including a gate electrode electrically connected to the impurity region, and an isolation region formed around the amplifier transistor and implanted with p-type impurities. The amplifier transistor includes an n-type source/drain region formed between the gate electrode and the isolation region, and a channel region formed under the gate electrode. A gap in the isolation region is, in a gate width direction, wider at a portion including the channel region than at a portion including the source/drain region.

公开(公告)号：US09813651B2

公开(公告)日：2017-11-07

申请号：US14579592

申请日：2014-12-22

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Mitsuyoshi Mori ,  Hirohisa Ohtsuki ,  Yoshiyuki Ohmori ,  Yoshihiro Sato ,  Ryohei Miyagawa

IPC: H04N5/335 ,  H04N3/14 ,  H04N5/378 ,  H01L27/146 ,  H04N5/3745

CPC classification number: H04N5/378 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/3745

Abstract: A solid-state imaging device according to the present disclosure includes pixels arranged two-dimensionally, each of the pixels including: a metal electrode; a photoelectric conversion layer that is on the metal electrode and converts light into an electrical signal; a transparent electrode on the photoelectric conversion layer; an electric charge accumulation region that is electrically connected to the metal electrode and accumulates electric charges from the photoelectric conversion layer; an amplifier transistor that applies a signal voltage according to an amount of the electric charges in the electric charge accumulation region; and a reset transistor that resets electrical potential of the electric charge accumulation region, in which the reset transistor includes a gate oxide film thicker than a gate oxide film of the amplifier transistor.

公开(公告)号：US20210005650A1

公开(公告)日：2021-01-07

申请号：US17025620

申请日：2020-09-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tokuhiko TAMAKI ,  Hirohisa Ohtsuki ,  Ryohei Miyagawa ,  Motonori Ishii

IPC: H01L27/146 ,  H04N5/3745

Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.

公开(公告)号：US10367025B2

公开(公告)日：2019-07-30

申请号：US15850645

申请日：2017-12-21

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yoshihiro Sato ,  Ryohei Miyagawa ,  Tokuhiko Tamaki ,  Junji Hirase ,  Yoshiyuki Ohmori ,  Yoshiyuki Matsunaga

IPC: H01L27/146 ,  H04N5/363 ,  H04N5/378 ,  H01L21/266 ,  H01L21/8234

Abstract: Each unit pixel includes a photoelectric converter, an n-type impurity region forming an accumulation diode together with the semiconductor region, the accumulation diode accumulating a signal charge generated by the photoelectric converter, an amplifier transistor including a gate electrode electrically connected to the impurity region, and an isolation region formed around the amplifier transistor and implanted with p-type impurities. The amplifier transistor includes an n-type source/drain region formed between the gate electrode and the isolation region, and a channel region formed under the gate electrode. A gap in the isolation region is, in a gate width direction, wider at a portion including the channel region than at a portion including the source/drain region.

公开(公告)号：US09627431B2

公开(公告)日：2017-04-18

申请号：US14572046

申请日：2014-12-16

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Mitsuyoshi Mori ,  Ryohei Miyagawa ,  Yoshiyuki Ohmori ,  Yoshihiro Sato ,  Yutaka Hirose ,  Yusuke Sakata ,  Toru Okino

IPC: H01L27/146 ,  H01L27/30

CPC classification number: H01L27/14636 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/307

Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.

公开(公告)号：US09491379B2

公开(公告)日：2016-11-08

申请号：US14745270

申请日：2015-06-19

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Hideo Matsuya ,  Ryohei Miyagawa

IPC: H04N5/335 ,  H04N5/341 ,  H04N5/374 ,  H04N5/225 ,  H04N5/378

CPC classification number: H04N5/341 ,  H04N5/2258 ,  H04N5/374 ,  H04N5/378

Abstract: A solid-state image pickup device includes: a first pixel array which generates first pixel data; a second pixel array which generates second pixel data; a vertical scanning unit which drives the rows of the first pixel array and the rows of the second pixel array independently; and a signal processing circuit which outputs, as a single image signal, a pair of (i) the plurality of second pixel signals generated in the second pixel array in a first frame and (ii) the plurality of first pixel signals generated in the first pixel array in a second frame immediately after the first frame.

Abstract translation: 一种固态图像拾取装置，包括：产生第一像素数据的第一像素阵列; 产生第二像素数据的第二像素阵列; 垂直扫描单元，其独立地驱动第一像素阵列的行和第二像素阵列的行; 以及信号处理电路，其作为单个图像信号输出（i）在第一帧中在第二像素阵列中生成的多个第二像素信号，以及（ii）在第一帧中产生的多个第一像素信号 在第一帧之后的第二帧中的像素阵列。