公开(公告)号：US20210134963A1

公开(公告)日：2021-05-06

申请号：US17256475

申请日：2019-06-12

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Masanori NOMURA ,  Hiroaki UENO ,  Yusuke KINOSHITA ,  Yasuhiro YAMADA ,  Hidetoshi ISHIDA

IPC: H01L29/20 ,  H01L29/778 ,  H01L29/808 ,  H01L29/43

Abstract: A bidirectional switch element includes: a substrate; an AlzGa1-zN layer; an AlbGa1-bN layer; a first source electrode; a first gate electrode; a second gate electrode; a second source electrode; a p-type Alx1Ga1-x1N layer; a p-type Alx2Ga1-x2N layer; an AlyGa1-yN layer; and an AlwGa1-wN layer. The AlzGa1-zN layer is formed over the substrate. The AlbGa1-bN layer is formed on the AlzGa1-zN layer. The AlyGa1-yN layer is interposed between the substrate and the AlzGa1-zN layer. The AlwGa1-wN layer is interposed between the substrate and the AlyGa1-yN layer and has a higher C concentration than the AlyGa1-yN layer.

公开(公告)号：US20240313759A1

公开(公告)日：2024-09-19

申请号：US18546741

申请日：2022-02-22

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Ryosuke MAEDA ,  Yusuke KINOSHITA ,  Satoshi NAKAZAWA

IPC: H03K17/0812

CPC classification number: H03K17/08122

Abstract: An on-state voltage measurement circuit includes a detecting switch element, a control unit, a resistive element, and a voltage detection unit. The control unit includes a signal output terminal and a reference potential terminal and controls the detecting switch element. The resistive element is connected between a source terminal of the detecting switch element and the reference potential terminal. A resistance value of the resistive element is greater than an on-state resistance of the detecting switch element. The control unit turns the detecting switch element on when the semiconductor switch element is turned on. The voltage detection unit detects, based on a voltage across the resistive element when the semiconductor switch element and the detecting switch element are both on, the on-state voltage of the semiconductor switch element connected between a drain terminal of the detecting switch element and the reference potential terminal.

公开(公告)号：US20220337239A1

公开(公告)日：2022-10-20

申请号：US17633160

申请日：2020-10-23

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yusuke KINOSHITA ,  Hidetoshi ISHIDA ,  Hiroyuki HANDA ,  Yuji KUDOH ,  Satoshi NAKAZAWA

IPC: H03K17/687 ,  G01R31/26

Abstract: A switch system includes a bidirectional switch, a first gate driver circuit, a second gate driver circuit, a control unit, a first decision unit, and a second decision unit. The bidirectional switch includes a first source, a second source, a first gate, and a second gate. The first decision unit determines, based on a voltage at the first gate and a first threshold voltage, a state of the first gate in a first period in which a signal to turn OFF the first gate is output from the control unit to the first gate driver circuit. The second decision unit determines, based on a voltage at the second gate and a second threshold voltage, a state of the second gate in a second period in which a signal to turn OFF the second gate is output from the control unit to the second gate driver circuit.

公开(公告)号：US20220310835A1

公开(公告)日：2022-09-29

申请号：US17612542

申请日：2020-05-14

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takashi ICHIRYU ,  Yusuke KINOSHITA ,  Ryusuke KANOMATA ,  Masanori NOMURA ,  Hidetoshi ISHIDA

IPC: H01L29/778 ,  H01L29/10 ,  H01L29/20 ,  H01L29/205

Abstract: A bidirectional switch module includes a plurality of bidirectional switches and a mount board. Each of the plurality of bidirectional switches includes a first source electrode, a first gate electrode, a second gate electrode, and a second source electrode. On the mount board, the plurality of bidirectional switches are mounted. In the bidirectional switch module, the plurality of bidirectional switches are connected in parallel.

公开(公告)号：US20220302259A1

公开(公告)日：2022-09-22

申请号：US17637352

申请日：2020-08-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hiroto YAMAGIWA ,  Manabu YANAGIHARA ,  Takahiro SATO ,  Masahiro HIKITA ,  Hiroaki UENO ,  Yusuke KINOSHITA

IPC: H01L29/08 ,  H01L29/20 ,  H01L29/778 ,  H01L29/10

Abstract: A semiconductor device includes: a substrate; a first nitride semiconductor layer above the substrate; a second nitride semiconductor layer above the first nitride semiconductor layer and being greater than the first nitride semiconductor layer in band gap; and a first field-effect transistor including a first source electrode, a first drain electrode, and a first gate electrode that are above the second nitride semiconductor layer, the first source electrode and the first drain electrode being separated from each other, the first gate electrode being disposed between the first source electrode and the first drain electrode. The first field-effect transistor includes a third semiconductor layer that is above the second nitride semiconductor layer in part of a region between lower part of the first source electrode and the first gate electrode, and is separated from the first gate electrode. The third semiconductor layer and the first source electrode are electrically connected.