Pylon caisson attachment on a wing, gripping a lateral panel of the caisson
    11.
    发明授权
    Pylon caisson attachment on a wing, gripping a lateral panel of the caisson 有权
    托架沉箱附着在机翼上,夹着沉箱的侧板

    公开(公告)号:US08167238B2

    公开(公告)日:2012-05-01

    申请号:US12596784

    申请日:2008-04-22

    CPC classification number: B64D27/26 B64D2027/264 B64D2027/266

    Abstract: An aircraft assembly including a wing element and an attachment pylon of a turboengine, including a rigid structure forming a caisson defined externally by a first longeron, a second longeron, and two lateral panels. The assembly also includes an attachment mechanism of the structure on the wing element, fitted with two front attachments, each including two first fittings solid with the associated lateral panel. For each front attachment, the two first fittings are arranged respectively on either side of their associated lateral panel.

    Abstract translation: 包括翼元件和涡轮发动机的附接塔的飞行器组件,包括形成由第一长龙,第二长龙和两个侧面板外部限定的沉箱的刚性结构。 组件还包括在翼元件上的结构的附接机构,其具有两个前附件,每个包括两个与相关联的侧板实体固定的第一配件。 对于每个前附件,两个第一配件分别布置在其相关侧板的两侧。

    Method of manufacturing an inductance
    13.
    发明授权
    Method of manufacturing an inductance 有权
    制造电感的方法

    公开(公告)号:US07404249B2

    公开(公告)日:2008-07-29

    申请号:US10268648

    申请日:2002-10-10

    Abstract: A method for manufacturing an inductance in a monolithic circuit including a substrate of planar upper surface, including the steps of forming in the substrate a cavity substantially following the contour of the inductance to be formed, the cross-section of the cavity being deep with respect to its width; and filling the cavity with a conductive material.

    Abstract translation: 一种用于在包括平面上表面的基板的单片电路中制造电感的方法,包括以下步骤:在所述基板中形成基本上遵循待形成的电感轮廓的空腔,所述空腔的横截面相对于 到它的宽度 并用导电材料填充空腔。

    High-voltage periphery
    14.
    发明授权
    High-voltage periphery 有权
    高压外围

    公开(公告)号:US06677657B2

    公开(公告)日:2004-01-13

    申请号:US10255279

    申请日:2002-09-26

    Applicant: Pascal Gardes

    Inventor: Pascal Gardes

    CPC classification number: H01L21/76264 H01L21/76286 H01L29/404

    Abstract: A method for forming a component in a portion of a semiconductor substrate on insulator delimited by a lateral wall separated by an insulating layer from a peripheral region internal to the portion and heavily doped of a same first conductivity type as the substrate. A conductive plate is formed at the same time as the wall, on a layer of protection of the substrate surface, in electric contact with the peripheral region, the plate extending above said peripheral region towards the inside of the portion with respect to the wall, beyond the location above the limit between the peripheral region and the substrate.

    Abstract translation: 在半导体衬底的一部分上形成绝缘体的方法,该半导体衬底由由绝缘层分隔开的侧壁与该部分内部的周边区域限定,并且重掺杂与衬底相同的第一导电类型。 导电板与壁同时形成,在衬底表面的保护层上与周边区域电接触,该板在所述周边区域上方延伸相对于壁部分的内部, 超出了周边区域和衬底之间的限制之上的位置。

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