公开(公告)号：US08256708B2

公开(公告)日：2012-09-04

申请号：US12674555

申请日：2008-08-22

Applicant: Emmanuel Guillet ,  Jean-Marc Martinou ,  Pascal Gardes

Inventor： Emmanuel Guillet ,  Jean-Marc Martinou ,  Pascal Gardes

IPC: B64D27/00

CPC classification number: B64D27/26 ,  B64D2027/264 ,  B64D2027/268

Abstract: An aircraft engine attachment device including a rigid structure and a mechanism attaching the engine on the rigid structure, the attachment mechanism including a rear engine attachment and a device for taking-up thrust forces generated by the engine. The rear engine attachment is attached to the rigid structure by two lateral fittings attached to the rigid structure. The force take-up device includes two connecting rods mechanically connected to a spreader beam by a mechanical connection, a connection fitting attached to the rear engine attachment and mechanically connected to the rigid structure by a thrust pin, the lateral fittings including a stop mechanism to limit pivoting of the spreader beam if a connecting rod breaks and ensuring transmission of thrust forces to the rigid structure.

Abstract translation: 一种飞机发动机附接装置，包括刚性结构和将发动机附接在刚性结构上的机构，所述附接机构包括后部发动机附件和用于吸收由发动机产生的推力的装置。 后部发动机附件通过附接到刚性结构的两个侧向配件附接到刚性结构。 力吸收装置包括通过机械连接机械地连接到吊架梁的两个连杆，连接到后发动机附件的连接配件并通过推力销机械地连接到刚性结构件，该横向配件包括止动机构 如果连杆断裂并确保将推力传递到刚性结构，则吊具梁的极限枢转。

公开(公告)号：US07591958B2

公开(公告)日：2009-09-22

申请号：US11213098

申请日：2005-08-26

Applicant: Pascal Gardes ,  Fabrice Guitton

Inventor： Pascal Gardes ,  Fabrice Guitton

IPC: B44C1/22

CPC classification number: H01L21/6836 ,  H01L21/6835 ,  H01L21/78 ,  H01L24/97 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2221/68377 ,  H01L2224/16 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2224/0401

Abstract: The manufacturing of electronic components on individual substrates made of an insulating material includes molding, in a silicon wafer, an insulating material with a thickness corresponding to the final thickness desired for the substrates, manufacturing the electronic components, and removing the silicon from the rear surface of the wafer after manufacturing of the components.

Abstract translation: 在由绝缘材料制成的单个基板上的电子部件的制造包括在硅晶片中模制具有对应于基板所需的最终厚度的厚度的绝缘材料，制造电子部件，以及从后表面去除硅 的晶片制造后的部件。

公开(公告)号：US07404249B2

公开(公告)日：2008-07-29

申请号：US10268648

申请日：2002-10-10

Applicant: Pascal Gardes ,  Gérard Auriel

Inventor： Pascal Gardes ,  Gérard Auriel

IPC: H01F7/06

CPC classification number: H01L28/10 ,  H01F17/0006 ,  H01F41/041 ,  H01L2224/11 ,  Y10T29/4902 ,  Y10T29/49155 ,  Y10T29/49165

Abstract: A method for manufacturing an inductance in a monolithic circuit including a substrate of planar upper surface, including the steps of forming in the substrate a cavity substantially following the contour of the inductance to be formed, the cross-section of the cavity being deep with respect to its width; and filling the cavity with a conductive material.

Abstract translation: 一种用于在包括平面上表面的基板的单片电路中制造电感的方法，包括以下步骤：在所述基板中形成基本上遵循待形成的电感轮廓的空腔，所述空腔的横截面相对于 到它的宽度 并用导电材料填充空腔。

公开(公告)号：US06677657B2

公开(公告)日：2004-01-13

申请号：US10255279

申请日：2002-09-26

Applicant: Pascal Gardes

Inventor： Pascal Gardes

IPC: H01L2358

CPC classification number: H01L21/76264 ,  H01L21/76286 ,  H01L29/404

Abstract: A method for forming a component in a portion of a semiconductor substrate on insulator delimited by a lateral wall separated by an insulating layer from a peripheral region internal to the portion and heavily doped of a same first conductivity type as the substrate. A conductive plate is formed at the same time as the wall, on a layer of protection of the substrate surface, in electric contact with the peripheral region, the plate extending above said peripheral region towards the inside of the portion with respect to the wall, beyond the location above the limit between the peripheral region and the substrate.

Abstract translation: 在半导体衬底的一部分上形成绝缘体的方法，该半导体衬底由由绝缘层分隔开的侧壁与该部分内部的周边区域限定，并且重掺杂与衬底相同的第一导电类型。 导电板与壁同时形成，在衬底表面的保护层上与周边区域电接触，该板在所述周边区域上方延伸相对于壁部分的内部， 超出了周边区域和衬底之间的限制之上的位置。