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公开(公告)号：US5834330A
公开(公告)日：1998-11-10
申请号：US726731
申请日：1996-10-07
CPC分类号： B82Y20/00 , H01L21/465 , H01S5/327 , H01S5/209 , H01S5/2231 , H01S5/347
摘要： A II-VI semiconductor device is fabricated using a selective etchant in the form of aqueous solution of HX where X is Cl or Br. The II-VI semiconductor device is composed of a number of layers. Selective etching can be enabled by introducing Mg into one of the semiconductor layers. The resultant device may include a semiconductor layer containing Mg.
摘要翻译： 使用HX的水溶液形式的选择性蚀刻剂制造II-VI半导体器件，其中X是Cl或Br。 II-VI半导体器件由多层构成。 可以通过将Mg引入到半导体层之一来实现选择性蚀刻。 所得到的器件可以包括含Mg的半导体层。
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公开(公告)号：US07645478B2
公开(公告)日：2010-01-12
申请号：US11094928
申请日：2005-03-31
申请人： Steven D. Thelss , Paul F. Baude , Michael A. Haase , Eric W. Hemmesch , Yaoqi J. Liu , Sergey S. Lamansky
发明人： Steven D. Thelss , Paul F. Baude , Michael A. Haase , Eric W. Hemmesch , Yaoqi J. Liu , Sergey S. Lamansky
CPC分类号： H01L51/0013 , H01L27/3244 , H01L29/7869 , H01L2251/5315 , Y10S428/917
摘要： Methods of forming displays are described. The displays have zinc oxide row and column drivers integrated onto the same display substrate as zinc oxide pixel transistors and organic light emitting diodes. The organic light emitting diodes are prepared, at least in part, using a thermal transfer process from a donor sheet.
摘要翻译： 描述形成显示器的方法。 显示器与氧化锌列和列驱动器集成在与氧化锌像素晶体管和有机发光二极管相同的显示基板上。 有机发光二极管至少部分地使用来自供体薄片的热转印工艺制备。
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公开(公告)号：US07352213B2
公开(公告)日：2008-04-01
申请号：US11421075
申请日：2006-05-31
申请人： Paul F. Baude , Michael A. Haase
发明人： Paul F. Baude , Michael A. Haase
CPC分类号： G06K19/0701 , G06K19/0723 , H03K3/0315 , H03K19/094
摘要： The use of an alternating current (ac) source to power logic circuitry can support satisfactory device performance for a variety of applications, while enhancing long-term stability of the circuitry. For example, when organic thin film transistor (OTFT)-based logic circuitry is powered by an ac power source, the logic circuitry exhibits stable performance characteristics over an extended period of operation. Enhanced stability may permit the use of OTFT logic circuitry to form a variety of circuit devices, including inverters, oscillators, logic gates, registers and the like. Such circuit devices may find application in a variety of applications, including integrated circuits, printed circuit boards, flat panel displays, smart cards, cell phones, and RFID tags. In some applications, the ac-powered logic circuitry may eliminate the need for ac-dc rectification components, thereby reducing the manufacturing time, expense, cost, complexity, and size of the component carrying the circuitry.
摘要翻译： 使用交流（ac）源来为逻辑电路供电可以支持各种应用的令人满意的器件性能，同时提高电路的长期稳定性。 例如，当基于有机薄膜晶体管（OTFT）的逻辑电路由交流电源供电时，逻辑电路在延长的操作周期内表现出稳定的性能特性。 增强的稳定性可以允许使用OTFT逻辑电路来形成各种电路装置，包括反相器，振荡器，逻辑门，寄存器等。 这种电路装置可以应用于各种应用，包括集成电路，印刷电路板，平板显示器，智能卡，蜂窝电话和RFID标签。 在一些应用中，交流供电的逻辑电路可以消除对交流 - 直流整流部件的需要，从而减少承载电路的部件的制造时间，成本，成本，复杂性和尺寸。
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公开(公告)号：US07193291B2
公开(公告)日：2007-03-20
申请号：US10809135
申请日：2004-03-25
申请人： Tzu-Chen Lee , Michael A. Haase , Paul F. Baude
发明人： Tzu-Chen Lee , Michael A. Haase , Paul F. Baude
IPC分类号： H01L27/095 , H01L29/47
CPC分类号： H01L51/105 , H01L51/002 , H01L51/0051 , H01L51/0052 , H01L51/0053 , H01L51/0059 , H01L51/0078 , H01L51/0081 , H01L51/0579 , H01L51/0583
摘要： An organic Schottky diode includes a polycrystalline organic semiconductor layer with a rectifying contact on one side of the layer. An amorphous doped semiconductor layer is placed on the other side of the polycrystalline organic semiconductor layer, and it acts as a buffer between the semiconductor layer and an ohmic contact layer.
摘要翻译： 有机肖特基二极管包括在层的一侧具有整流接触的多晶有机半导体层。 非晶掺杂半导体层被放置在多晶有机半导体层的另一侧上，并且其作为半导体层和欧姆接触层之间的缓冲区。
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公开(公告)号：US5818859A
公开(公告)日：1998-10-06
申请号：US726618
申请日：1996-10-07
CPC分类号： B82Y20/00 , H01S5/347 , H01S2304/02 , H01S5/327 , H01S5/3409
摘要： A II-VI compound semiconductor laser diode includes a plurality of II-VI semiconductor layers forming a pn junction supported by a single crystal GaAs semiconductor substrate. The layers formed in the pn junction include a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and at least a first guiding layer between the first and second cladding layers. A quantum well active layer is positioned within the pn junction. Electrical energy is coupled to the laser diode by first and second electrodes. Various layers in the laser diode are formed using Be.
摘要翻译： II-VI化合物半导体激光二极管包括形成由单晶GaAs半导体衬底支撑的pn结的多个II-VI半导体层。 形成在pn结中的层包括第一导电类型的第一包层，第二导电类型的第二包层和在第一和第二包层之间的至少第一引导层。 量子阱活性层位于pn结内。 电能通过第一和第二电极耦合到激光二极管。 使用Be形成激光二极管中的各个层。
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公开(公告)号：US07088145B2
公开(公告)日：2006-08-08
申请号：US10328461
申请日：2002-12-23
申请人： Paul F. Baude , Michael A. Haase
发明人： Paul F. Baude , Michael A. Haase
IPC分类号： H03K19/20 , H03K19/094
CPC分类号： G06K19/0701 , G06K19/0723 , H03K3/0315 , H03K19/094
摘要： The use of an alternating current (ac) source to power logic circuitry can support satisfactory device performance for a variety of applications, while enhancing long-term stability of the circuitry. For example, when organic thin film transistor (OTFT)-based logic circuitry is powered by an ac power source, the logic circuitry exhibits stable performance characteristics over an extended period of operation. Enhanced stability may permit the use of OTFT logic circuitry to form a variety of circuit devices, including inverters, oscillators, logic gates, registers and the like. Such circuit devices may find application in a variety of applications, including integrated circuits, printed circuit boards, flat panel displays, smart cards, cell phones, and RFID tags. In some applications, the ac-powered logic circuitry may eliminate the need for ac-dc rectification components, thereby reducing the manufacturing time, expense, cost, complexity, and size of the component carrying the circuitry.
摘要翻译： 使用交流（ac）源来为逻辑电路供电可以支持各种应用的令人满意的器件性能，同时提高电路的长期稳定性。 例如，当基于有机薄膜晶体管（OTFT）的逻辑电路由交流电源供电时，逻辑电路在延长的操作周期内表现出稳定的性能特性。 增强的稳定性可以允许使用OTFT逻辑电路来形成各种电路装置，包括反相器，振荡器，逻辑门，寄存器等。 这种电路装置可以应用于各种应用，包括集成电路，印刷电路板，平板显示器，智能卡，蜂窝电话和RFID标签。 在一些应用中，交流供电的逻辑电路可以消除对交流 - 直流整流部件的需要，从而减少承载电路的部件的制造时间，成本，成本，复杂性和尺寸。
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公开(公告)号：US06897164B2
公开(公告)日：2005-05-24
申请号：US10076174
申请日：2002-02-14
申请人： Paul F. Baude , Patrick R. Fleming , Michael A. Haase , Tommie W. Kelley , Dawn V. Muyres , Steven Theiss
发明人： Paul F. Baude , Patrick R. Fleming , Michael A. Haase , Tommie W. Kelley , Dawn V. Muyres , Steven Theiss
IPC分类号： H05B33/10 , C23C14/04 , C23C14/24 , C23C14/56 , G03F7/12 , H01L21/336 , H01L21/363 , H01L29/786 , H01L33/00 , H01L51/05 , H01L51/50 , H01L21/31
CPC分类号： H01L51/0011 , C23C14/042 , C23C14/562 , G03F7/12 , H01L51/0081 , H01L51/0087 , Y10S438/942 , Y10S438/943
摘要： Aperture masks and deposition techniques for using aperture masks are described. In addition, techniques for creating aperture masks and other techniques for using the aperture masks are described. The various techniques can be particularly useful in creating circuit elements for electronic displays and low-cost integrated circuits such as radio frequency identification (RFID) circuits. In addition, the techniques can be advantageous in the fabrication of integrated circuits incorporating organic semiconductors, which typically are not compatible with wet processes.
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公开(公告)号：US6058123A
公开(公告)日：2000-05-02
申请号：US929221
申请日：1997-09-09
CPC分类号： B82Y20/00 , H01L21/465 , H01S5/327 , H01S5/209 , H01S5/2231 , H01S5/347
摘要： A II-VI semiconductor device is fabricated using a selective etchant in the form of aqueous solution of HX where X is Cl or Br. The II-VI semiconductor device is composed of a number of layers. Selective etching can be enabled by introducing Mg into one of the semiconductor layers. The resultant device may include a semiconductor layer containing Mg.
摘要翻译： 使用HX的水溶液形式的选择性蚀刻剂制造II-VI半导体器件，其中X是Cl或Br。 II-VI半导体器件由多层构成。 可以通过将Mg引入到半导体层之一来实现选择性蚀刻。 所得到的器件可以包括含Mg的半导体层。
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公开(公告)号：US06806520B2
公开(公告)日：2004-10-19
申请号：US10719209
申请日：2003-11-21
IPC分类号： H01L2976
CPC分类号： H01L51/0021 , B82Y10/00 , C23C14/042 , H01L21/31691 , H01L29/66742 , H01L51/001 , H01L51/0013 , H01L51/0016 , H01L51/0036 , H01L51/0037 , H01L51/0046 , H01L51/0052 , H01L51/0078 , H01L51/0545 , Y10S438/943 , Y10S438/944
摘要： A method for making transistors comprises depositing source electrode and drain electrode features onto a substrate through a single aperture in a stationary shadow mask, said aperture having at least two opposing edges; wherein the shapes of the features are defined by the aperture and location of source materials in relation to the substrate.
摘要翻译： 一种用于制造晶体管的方法包括通过固定荫罩中的单个孔将源电极和漏极特征沉积到衬底上，所述孔具有至少两个相对的边缘; 其中特征的形状由源材料相对于基底的孔径和位置限定。
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公开(公告)号：US08826528B2
公开(公告)日：2014-09-09
申请号：US13131740
申请日：2009-12-03
申请人： Steven D. Theiss , Michael A. Haase
发明人： Steven D. Theiss , Michael A. Haase
IPC分类号： H05K3/00 , H01L21/768 , H05K3/40 , H01L27/12
CPC分类号： H01L21/76802 , H01L27/1214 , H01L27/124 , H01L2224/24137 , H05K3/4092 , Y10T29/49002 , Y10T29/49124 , Y10T29/49147 , Y10T428/12396
摘要： Approaches for formation of a circuit via which electrically connects a first thin film metallization layer a second thin film metallization layer are described. Via formation involves the use of an anodization barrier and/or supplemental pad disposed in a via connection region prior to anodization of the first metallization layer. The material used to form the barrier is substantially impermeable to the anodization solution during anodization, and disrupts the formation of oxide between the electrically conducting layer and the barrier. The supplemental pad is non-anodizable, and is covered by the barrier to substantially prevent current flow through the pad during anodization. Following anodization, the barrier is removed. If the supplemental pad is sufficiently conductive, it can be left on the first metallization layer after removal of the barrier. The second metallization layer is disposed over the anodized layer, making electrical contact with the first electrically conductive layer in the via connection region.
摘要翻译： 描述了形成电路的方法，通过该电路将第一薄膜金属化层电连接到第二薄膜金属化层。 通孔形成涉及在阳极氧化第一金属化层之前使用设置在通孔连接区域中的阳极氧化屏障和/或补充焊盘。 用于形成屏障的材料在阳极氧化期间对于阳极氧化溶液是基本上不可渗透的，并且破坏导电层和阻挡层之间的氧化物的形成。 辅助垫是非阳极氧化的，并被屏障覆盖，以在阳极氧化期间基本上防止电流流过垫。 阳极氧化后，屏障被去除。 如果补充垫具有足够的导电性，则可以在去除屏障之后留在第一金属化层上。 第二金属化层设置在阳极氧化层上，与通孔连接区域中的第一导电层电接触。
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