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16 条记录 (耗时 0.033 秒)

    In-line deposition processes for circuit fabrication
    2.
    发明授权
    In-line deposition processes for circuit fabrication 失效
    电路制造的在线沉积工艺

    公开(公告)号：US06821348B2

    公开(公告)日：2004-11-23

    申请号：US10076005

    申请日：2002-02-14

    申请人： Paul F. Baude ,  Patrick R. Fleming ,  Michael A. Haase ,  Tommie W. Kelley ,  Dawn V. Muyres ,  Steven Theiss

    发明人： Paul F. Baude ,  Patrick R. Fleming ,  Michael A. Haase ,  Tommie W. Kelley ,  Dawn V. Muyres ,  Steven Theiss

    IPC分类号： C23C1600

    CPC分类号： C23C14/12 ,  C23C14/042 ,  C23C14/562 ,  G03F7/12 ,  H01L51/0004 ,  H01L51/0545 ,  H05K1/0393 ,  H05K3/143 ,  H05K2203/0271 ,  H05K2203/1545

    摘要： In one embodiment, the invention is directed to aperture mask deposition techniques using aperture mask patterns formed in one or more elongated webs of flexible film. The techniques involve sequentially depositing material through mask patterns formed in the film to define layers, or portions of layers, of the circuit. A deposition substrate can also be formed from an elongated web, and the deposition substrate web can be fed through a series of deposition stations. Each deposition station may have an elongated web formed with aperture mask patterns. The elongated web of mask patterns feeds in a direction perpendicular to the deposition substrate web. In this manner, the circuit creation process can be performed in-line. Moreover, the process can be automated to reduce human error and increase throughput.

    摘要翻译： 在一个实施例中，本发明涉及使用在一个或多个细长的柔性膜网中形成的孔掩模图案的孔掩模沉积技术。 这些技术涉及通过在膜中形成的掩模图案顺序沉积材料以限定电路的层或层的一部分。 沉积衬底也可以由细长的腹板形成，并且沉积衬底腹板可以通过一系列沉积站进给。 每个沉积站可以具有形成有孔掩模图案的细长腹板。 细长的掩模图形网沿垂直于沉积衬底腹板的方向进给。 以这种方式，可以在线执行电路创建处理。 此外，该过程可以自动化以减少人为错误并增加吞吐量。

    Organic polymers, electronic devices, and methods
    6.
    发明授权
    Organic polymers, electronic devices, and methods 失效
    有机聚合物，电子器件和方法

    公开(公告)号：US07098525B2

    公开(公告)日：2006-08-29

    申请号：US10434377

    申请日：2003-05-08

    申请人： Feng Bai ,  Todd D. Jones ,  Kevin M. Lewandowski ,  Tzu-Chen Lee ,  Dawn V. Muyres ,  Tommie W. Kelley

    发明人： Feng Bai ,  Todd D. Jones ,  Kevin M. Lewandowski ,  Tzu-Chen Lee ,  Dawn V. Muyres ,  Tommie W. Kelley

    IPC分类号： H01L23/58

    CPC分类号： H01L21/02118 ,  H01G4/18 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/312 ,  H01L51/0052 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0537 ,  H05K1/162 ,  Y10T428/31692

    摘要： Organic polymers for use in electronic devices, wherein the polymer includes repeat units of the formula: wherein: each R1 is independently H, an aryl group, Cl, Br, I, or an organic group that includes a crosslinkable group; each R2 is independently H, an aryl group or R4; each R3 is independently H or methyl; each R5 is independently an alkyl group, a halogen, or R4; each R4 is independently an organic group that includes at least one CN group and has a molecular weight of about 30 to about 200 per CN group; and n=0–3; with the proviso that at least one repeat unit in the polymer includes an R4. These polymers are useful in electronic devices such as organic thin film transistors.

    摘要翻译： 用于电子器件的有机聚合物，其中所述聚合物包括下式的重复单元：其中：每个R 1独立地为H，芳基，Cl，Br，I或包括 可交联基团; 每个R 2独立地为H，芳基或R 4; 每个R 3独立地为H或甲基; 每个R 5独立地是烷基，卤素或R 4; 每个R 4独立地是包含至少一个CN基团并且具有每个CN基团约30至约200的分子量的有机基团; 并且n = 0-3; 条件是聚合物中至少一个重复单元包括R 4。 这些聚合物可用于诸如有机薄膜晶体管的电子器件中。

    Surface modifying layers for organic thin film transistors
    10.
    发明授权
    Surface modifying layers for organic thin film transistors 有权
    有机薄膜晶体管的表面改性层

    公开(公告)号：US06433359B1

    公开(公告)日：2002-08-13

    申请号：US09947845

    申请日：2001-09-06

    申请人： Tommie W. Kelley ,  Dawn V. Muyres ,  Mark J. Pellerite ,  Timothy D. Dunbar ,  Larry D. Boardman ,  Terrance P. Smith

    发明人： Tommie W. Kelley ,  Dawn V. Muyres ,  Mark J. Pellerite ,  Timothy D. Dunbar ,  Larry D. Boardman ,  Terrance P. Smith

    IPC分类号： H01L3524

    CPC分类号： H01L51/0512 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/31691 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/0516 ,  H01L51/0545

    摘要： Provided is an organic thin film transistor comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer. The monolayer is a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer. The monolayer precursor composition has the formula: X—Y—Zn, wherein X is H or CH3; Y is a linear or branched C5-C50 aliphatic or cyclic aliphatic connecting group, or C8-C50 group comprising an aromatic group and a C3-C44 aliphatic or cyclic aliphatic connecting group; Z is selected from from —PO3H2, —OPO3H2, benzotriazolyl (—C6H4N3), carbonyloxybenzotriazole (—OC(═O)C6H4N3), oxybenzotriazole (—O—C6H4N3), aminobenzotriazole (—NH—C6H4N3), —CONHOH, —COOH, —OH, —SH, —COSH, —COSeH, —C5H4N, —SeH, —SO3H, —NC, —SiCl(CH3)2, —SiCl2CH3, amino, and phosphinyl; and n is 1, 2, or 3 provided that n=1 when Z is —SiCl(CH3)2 or —SiCl2CH3. Methods of making a thin film transistor and an integrated circuit comprising thin film transistors are also provided.

    摘要翻译： 提供了一种有机薄膜晶体管，其包括介于栅极电介质和有机半导体层之间的自组装单层。 单层是栅极电介质和自组装单层的前体之间的反应的产物。 单层前体组合物具有下式：X-Y-Zn，其中X是H或CH 3; Y是直链或支链C 5 -C 50脂族或环状脂族连接基团或包含芳族基团和C 3 -C 44脂族或环状脂族连接基团的C 8 -C 50基团; Z选自-PO 3 H 2，-OPO 3 H 2，苯并三唑基（-C 6 H 4 N 3），羰氧基苯并三唑（-OC（= O）C 6 H 4 N 3），氧苯并三唑（-O-C 6 H 4 N 3），氨基苯并三唑（-NH-C 6 H 4 N 3），-CONHOH，-COOH， -OH，-SH，-COSH，-COSeH，-C5H4N，-SeH，-SO3H，-NC，-SiCl（CH3）2，-SiCl2CH3，氨基和氧膦基; 并且n为1,2或3，条件是当Z为-SiCl（CH 3）2或-SiCl 2 CH 3时n = 1。还提供了制造薄膜晶体管的方法和包括薄膜晶体管的集成电路。