Segmented superconducting tape having reduced AC losses and method of making
    11.
    发明授权
    Segmented superconducting tape having reduced AC losses and method of making 有权
    具有减小的AC损耗的分段超导带和制造方法

    公开(公告)号:US07593758B2

    公开(公告)日:2009-09-22

    申请号:US11245722

    申请日:2005-10-06

    IPC分类号: H01B12/00 H01L39/06

    摘要: A superconducting tape having reduced AC losses. The tape has a high temperature superconductor layer that is segmented. Disruptive strips, formed in one of the tape substrate, a buffer layer, and the superconducting layer create parallel discontinuities in the superconducting layer that separate the current-carrying elements of the superconducting layer into strips or filament-like structures. Segmentation of the current-carrying elements has the effect of reducing AC current losses. Methods of making such a superconducting tape and reducing AC losses in such tapes are also disclosed.

    摘要翻译: 具有减小的AC损耗的超导带。 胶带具有分段的高温超导体层。 形成在带基板,缓冲层和超导层之一中的破坏带在超导层中产生平行的不连续性,其将超导层的载流元件分成条或丝状结构。 载流元件的分段具有减小交流电流损耗的效果。 还公开了制造这种超导带并减少这种带中的AC损耗的方法。

    Buffer layer for thin film structures
    12.
    发明授权
    Buffer layer for thin film structures 有权
    薄膜结构缓冲层

    公开(公告)号:US07129196B2

    公开(公告)日:2006-10-31

    申请号:US10624855

    申请日:2003-07-21

    IPC分类号: H01B12/00 H01F6/00 H01L39/00

    CPC分类号: H01L39/2461 Y10S428/93

    摘要: A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

    摘要翻译: 提供了包括基底和钛酸锶和钌酸锶的混合物层的复合结构。 超导制品可以包括包含氧化镁的最外层,钛酸锶的缓冲层或钛酸锶和钌酸锶的混合物的复合结构和在缓冲层上的诸如YBCO的超导材料的顶层。

    High critical current superconducting tapes
    14.
    发明授权
    High critical current superconducting tapes 有权
    高临界电流超导磁带

    公开(公告)号:US06624122B1

    公开(公告)日:2003-09-23

    申请号:US09870579

    申请日:2001-05-30

    IPC分类号: H01L3900

    摘要: Improvements in critical current capacity for superconducting film structures are disclosed and include the use of a superconducting RE-BCO layer including a mixture of rare earth metals, e.g., yttrium and europium, where the ratio of yttrium to europium in the RE-BCO layer ranges from about 3 to 1 to from about 1.5 to 1.

    摘要翻译: 公开了超导膜结构的临界电流容量的改进,并且包括使用包括稀土金属(例如钇和铕)的混合物的超导RE-BCO层,其中RE-BCO层中钇与铕的比例范围 约3至1至约1.5至1。

    Buffer layers for coated conductors
    15.
    发明授权
    Buffer layers for coated conductors 有权
    涂层导体的缓冲层

    公开(公告)号:US08003571B2

    公开(公告)日:2011-08-23

    申请号:US11890812

    申请日:2007-08-07

    IPC分类号: H01B12/00 H01L39/00 H01L31/00

    CPC分类号: H01L39/2461 Y10S505/701

    摘要: A composite structure is provided including a base substrate, an IBAD oriented material upon the base substrate, and a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material. Additionally, an article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and a thick film upon the cubic metal oxide material. Finally, a superconducting article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and an yttrium barium copper oxide material upon the cubic metal oxide material.

    摘要翻译: 提供了一种复合结构,其包括基底基板,在基底基板上的取向为IBAD的材料,以及在IBAD取向材料上选自稀土锆酸盐和稀土铪的立方金属氧化物材料。 此外,提供了一种制品,其包括基底基材,在基底基材上的取向为IBAD的材料,在IBAD取向材料上选自稀土锆酸盐和稀土铪的立方晶金属氧化物材料,以及厚度为 立方金属氧化物材料。 最后,提供了一种超导制品,其包括基底基材,在基底基材上的IBAD取向材料,在IBAD取向材料上选自稀土锆酸盐和稀土铪的立方金属氧化物材料,以及钇钡铜 氧化物材料在立方金属氧化物材料上。

    Buffer layers for coated conductors
    16.
    发明申请
    Buffer layers for coated conductors 有权
    涂层导体的缓冲层

    公开(公告)号:US20080234134A1

    公开(公告)日:2008-09-25

    申请号:US11890812

    申请日:2007-08-07

    IPC分类号: H01L39/12

    CPC分类号: H01L39/2461 Y10S505/701

    摘要: A composite structure is provided including a base substrate, an IBAD oriented material upon the base substrate, and a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material. Additionally, an article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and a thick film upon the cubic metal oxide material. Finally, a superconducting article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and an yttrium barium copper oxide material upon the cubic metal oxide material.

    摘要翻译: 提供了一种复合结构,其包括基底基板,在基底基板上的取向为IBAD的材料,以及在IBAD取向材料上选自稀土锆酸盐和稀土铪的立方金属氧化物材料。 此外,提供了一种制品,其包括基底基材,在基底基材上的取向为IBAD的材料,在IBAD取向材料上选自稀土锆酸盐和稀土铪的立方晶金属氧化物材料,以及厚度为 立方金属氧化物材料。 最后,提供了一种超导制品,其包括基底基材,在基底基材上的IBAD取向材料,在IBAD取向材料上选自稀土锆酸盐和稀土铪的立方金属氧化物材料,以及钇钡铜 氧化物材料在立方金属氧化物材料上。

    Superconducting structure
    17.
    发明授权
    Superconducting structure 失效
    超导结构

    公开(公告)号:US06943136B2

    公开(公告)日:2005-09-13

    申请号:US10321156

    申请日:2002-12-17

    CPC分类号: H01L39/2461 Y10S428/93

    摘要: A superconductive structure including a dielectric oxide substrate, a thin buffer layer of a superconducting material thereon; and, a layer of a rare earth-barium-copper oxide superconducting film thereon the thin layer of yttrium-barium-copper oxide, the rare earth selected from the group consisting of samarium, gadolinium, ytterbium, erbium, neodymium, dysprosium, holmium, lutetium, a combination of more than one element from the rare earth group and a combination of one or more elements from the rare earth group with yttrium, the buffer layer of superconducting material characterized as having chemical and structural compatibility with the dielectric oxide substrate and the rare earth-barium-copper oxide superconducting film is provided.

    摘要翻译: 一种超导结构,包括电介质氧化物衬底,其上的超导材料的薄缓冲层; 以及稀土 - 钡 - 铜氧化物超导膜上的稀土钡 - 氧化铜 - 氧化铜薄层,稀土选自钐,钆,镱,铒,钕,镝,钬, 镥,来自稀土基团的多于一种元素的组合以及来自稀土族与钇的一种或多种元素的组合,超导材料的缓冲层的特征在于与电介质氧化物基质具有化学和结构相容性, 提供稀土 - 钡 - 铜氧化物超导膜。

    Superconducting structure
    18.
    发明授权

    公开(公告)号:US06541136B1

    公开(公告)日:2003-04-01

    申请号:US09152813

    申请日:1998-09-14

    IPC分类号: H01L3900

    CPC分类号: H01L39/2461 Y10S428/93

    摘要: A superconductive structure including a dielectric oxide substrate, a thin buffer layer of a superconducting material thereon; and, a layer of a rare earth-barium-copper oxide superconducting film thereon the thin layer of yttrium-barium-copper oxide, the rare earth selected from the group consisting of samarium, gadolinium, ytterbium, erbium, neodymium, dysprosium, holmium, lutetium, a combination of more than one element from the rare earth group and a combination of one or more elements from the rare earth group with yttrium, the buffer layer of superconducting material characterized as having chemical and structural compatibility with the dielectric oxide substrate and the rare earth-barium-copper oxide superconducting film is provided.

    Architecture for high critical current superconducting tapes
    19.
    发明授权
    Architecture for high critical current superconducting tapes 有权
    高临界电流超导磁带架构

    公开(公告)号:US06383989B2

    公开(公告)日:2002-05-07

    申请号:US09867842

    申请日:2001-05-29

    IPC分类号: H01B1202

    CPC分类号: H01L39/143 H01L39/128

    摘要: Improvements in critical current capacity for superconducting film structures are disclosed and include the use of, e.g., multilayer YBCO structures where individual YBCO layers are separated by a layer of an insulating material such as CeO2 and the like, a layer of a conducting material such as strontium ruthenium oxide and the like or by a second superconducting material such as SmBCO and the like.

    摘要翻译: 公开了对超导膜结构的临界电流容量的改进,并且包括使用例如多层YBCO结构,其中单独的YBCO层由诸如CeO 2等的绝缘材料层分离,导电材料层例如 锶氧化钌等,或通过第二超导材料如SmBCO等。

    Oriented conductive oxide electrodes on SiO2/Si and glass
    20.
    发明授权
    Oriented conductive oxide electrodes on SiO2/Si and glass 失效
    SiO 2 / Si和玻璃上的定向导电氧化物电极

    公开(公告)号:US06743292B2

    公开(公告)日:2004-06-01

    申请号:US09955715

    申请日:2001-09-18

    IPC分类号: C30B2900

    摘要: A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide.

    摘要翻译: 提供一种薄膜结构,其包括在其表面上具有二氧化硅层的硅衬底和通过离子束辅助沉积沉积在二氧化硅层上的立方氧化物材料层,所述立方氧化物材料层 特征为双轴取向。 优选地,立方氧化物材料是氧化钇稳定的氧化锆。 另外的双轴取向氧化钌或氧化镧镧的薄层沉积在氧化钇稳定的氧化锆层上。 在氧化钇稳定的氧化锆层和氧化镧镧氧化钴层之间采用氧化铈中间层。 此外,一层钡锶钛氧化物可以在双轴取向的氧化钌层或氧化镧锶上。