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    SUPERCONDUCTING QUANTUM INTERFERENCE APPARATUS
    2.
    发明申请
    SUPERCONDUCTING QUANTUM INTERFERENCE APPARATUS 有权

    公开(公告)号：US20210018575A1

    公开(公告)日：2021-01-21

    申请号：US17041309

    申请日：2019-03-29

    申请人： Commonwealth Scientific and Industrial Research Organisation

    发明人： Emma Mitchell ,  Chris Lewis

    IPC分类号： G01R33/035 ,  H01L39/06 ,  H01L39/08 ,  H01L39/02 ,  H01L39/22

    摘要： This disclosure relates to Superconducting Quantum Interference Apparatuses, such as SQUID arrays and SQUIFs. A superconducting quantum interference apparatus comprises an array of loops each loop constituting a superconducting quantum interference device. The array comprises multiple columns, each of the columns comprises multiple rows connected in series, each of the multiple rows comprises a number of loops connected in parallel, and the number of loops connected in parallel in each row is more than two and less than 20 to improve a performance of the apparatus. It is an advantage that keeping the number of loops in parallel below 20 improves the performance of the apparatus. This is contrary to existing knowledge where it is commonly assumed that a larger number of parallel loops would increase performance.

    SUPERCONDUCTOR DEVICE
    6.
    发明申请
    SUPERCONDUCTOR DEVICE 有权
    超导体器件

    公开(公告)号：US20120115733A1

    公开(公告)日：2012-05-10

    申请号：US13282804

    申请日：2011-10-27

    申请人： Stephen M. HUSBAND ,  Alexander C. SMITH ,  Nigel SCHOFIELD ,  Andrew OLIVER

    发明人： Stephen M. HUSBAND ,  Alexander C. SMITH ,  Nigel SCHOFIELD ,  Andrew OLIVER

    IPC分类号： H01L39/06 ,  H01R13/40

    CPC分类号： H01F6/065 ,  H01F2006/001

    摘要： This invention relates to a superconductor device, comprising: a superconductor; a former which supports the superconductor; and, an intermediate electrical connector attached to the former for coupling the superconductor to a power source, wherein the intermediate electrical connector is connected to the superconductor via a deformable portion in the intermediate electrical connector, wherein the deformable portion allows relative movement between the superconductor and former.

    摘要翻译： 本发明涉及一种超导体器件，包括：超导体; 支持超导体的前者; 以及附接到前者的中间电连接器，用于将超导体耦合到电源，其中中间电连接器经由中间电连接器中的可变形部分连接到超导体，其中可变形部分允许超导体与超导体之间的相对运动 前任的。

    Enclosed ceramic filament
    7.
    发明授权
    Enclosed ceramic filament 失效
    封闭陶瓷灯丝

    公开(公告)号：US07268099B1

    公开(公告)日：2007-09-11

    申请号：US10337686

    申请日：2002-12-27

    申请人： L. Pierre de Rochemont

    发明人： L. Pierre de Rochemont

    IPC分类号： H01B12/02 ,  H01L39/12 ,  H01L39/06

    CPC分类号： H01L39/143 ,  H01L39/248 ,  Y10S428/93 ,  Y10S505/704 ,  Y10T29/49014 ,  Y10T428/12014

    摘要： In the present invention, a superconducting (sc) ceramic filament is enclosed in a silver sheath which is sealed therearound by applying silver powder between the surfaces of said sheath, pressing the surfaces and powder into contact and then applying sufficient heat to fuse them together, which heat is below the melting point of the surfaces and powder and then sintering the so enclosed ceramic filament, which upon cooling, forms a superconductor.

    摘要翻译： 在本发明中，将超导（sc）陶瓷丝包围在银护套中，通过在所述护套的表面之间施加银粉，将表面和粉末压合在一起，然后施加足够的热量将它们熔合在一起， 这些热量低于表面和粉末的熔点，然后烧结如此封闭的陶瓷细丝，其在冷却时形成超导体。

    Oxide superconductor devices fabricated by impurity ion implantation
    8.
    发明授权
    Oxide superconductor devices fabricated by impurity ion implantation 失效
    通过杂质离子注入制造的氧化物超导体器件

    公开(公告)号：US5795848A

    公开(公告)日：1998-08-18

    申请号：US699655

    申请日：1996-08-19

    申请人： Qi Yuan Ma

    发明人： Qi Yuan Ma

    IPC分类号： H01L39/24 ,  H01L39/06

    CPC分类号： H01L39/2464 ,  H01L39/249 ,  Y10S428/93 ,  Y10S505/70 ,  Y10S505/701

    摘要： Superconductivity is inhibited in selected portions of a high temperature superconductor ("HTS") material by patterning the selected portions with a resist. The patterned material is ion-bombarded to implant impurity ions in non-resist-bearing portions of the material. After low temperature annealing, the non-resist-bearing portions of the material lose their superconducting characteristics, but such characteristics are preserved in the material's resist-bearing portions. The material's crystalline structure is preserved, so additional layers can be epitaxially grown atop the inhibited material. Superconductivity is inhibited at a selected depth in a HTS material by subjecting the material to impurity ion bombardment at an energy level controlled to implant ions in the material at the selected depth. After low temperature annealing, the material loses its superconducting characteristics at the selected depth, but such characteristics are preserved at other depths (i.e. above and below the selected depth) and the material's crystalline structure is preserved. A multilayer HTS device and circuit structure can be made by initially depositing an HTS material on a substrate. Superconductivity is inhibited at a first selected depth in the material by ion-bombarding it at a first energy level controlled to implant impurity ions in the material at the first depth. The ion bombardment step is repeated for other selected depths by ion-bombarding the material at other energy levels controlled to implant impurity ions at the other depths. After low temperature annealing the material loses its superconducting characteristics at the selected depths, but such characteristics are preserved at other depths in the material, which retains its crystalline structure.

    摘要翻译： 通过用抗蚀剂图案化所选择的部分，在高温超导体（“HTS”）材料的选定部分抑制超导性。 图案化材料被离子轰击以将杂质离子注入材料的非抗蚀剂承载部分。 在低温退火之后，材料的非抗蚀承载部分失去其超导特性，但是这种特性被保留在材料的抗承载部分中。 保留材料的晶体结构，因此可以在被抑制的材料的顶部外延生长额外的层。 在HTS材料的选定深度处，通过使材料在被控制以在所选深度处材料中注入离子的能级进行杂质离子轰击来抑制超导性。 在低温退火之后，材料在所选择的深度处失去其超导特性，但是这种特性在其它深度（即，在所选深度之上和之下）被保留，并保留了材料的晶体结构。 可以通过在衬底上初始沉积HTS材料来制造多层HTS器件和电路结构。 通过在被控制为在第一深度处将材料中注入杂质离子的第一能级离子轰击材料中的第一选定深度处，超导性被抑制。 通过在被控制为在另一深度处植入杂质离子的其他能级下的材料离子轰击材料，对其它选定深度重复离子轰击步骤。 在低温退火之后，材料在所选择的深度处失去其超导特性，但是这种特性被保留在材料中的其它深度上，其保持其晶体结构。

    Integrated circuit having superconductive wirings
    10.
    发明授权
    Integrated circuit having superconductive wirings 失效
    集成电路具有超导布线

    公开(公告)号：US5083188A

    公开(公告)日：1992-01-21

    申请号：US618024

    申请日：1990-11-27

    申请人： Tadato Yamagata

    发明人： Tadato Yamagata

    IPC分类号： H01L39/06 ,  H01L21/3205 ,  H01L23/36 ,  H01L23/52 ,  H01L23/532

    CPC分类号： H01L23/36 ,  H01L23/53285 ,  H01L2924/0002 ,  Y10S505/703 ,  Y10S505/704 ,  Y10S505/856 ,  Y10S505/887

    摘要： An integrated circuit having a superconductive wiring comprises a semiconductor substrate, an integrated circuit device formed on the semiconductor substrate and a wiring connected to the integrated circuit device. The wiring is formed of a superconductive material and has a wide portion for heat radiation. The manufacturing method of the same comprises the steps of preparing a semiconductor substrate, forming an integrated circuit device on the semiconductor substrate, and connecting a wiring having a wide portion for heat radiation and formed of a superconductive material to the integrated circuit device on the semiconductor substrate.

    摘要翻译： 具有超导布线的集成电路包括半导体衬底，形成在半导体衬底上的集成电路器件和连接到集成电路器件的布线。 布线由超导材料形成，并且具有用于散热的宽部分。 其制造方法包括以下步骤：制备半导体衬底，在半导体衬底上形成集成电路器件，并将具有用于散热的宽部分并由超导材料形成的布线连接到半导体上的集成电路器件 基质。