Method for making touch panel
    11.
    发明授权
    Method for making touch panel 有权
    制作触摸屏的方法

    公开(公告)号:US08889215B2

    公开(公告)日:2014-11-18

    申请号:US13339688

    申请日:2011-12-29

    CPC classification number: G06F3/044 G06F2203/04103 G06F2203/04112

    Abstract: The present disclosure relates to a method for making a plurality of touch panels one time. The method includes following steps. A substrate is provided. The substrate has a surface defining a number of target areas with each including two areas: a touch-view area and a trace area. An adhesive layer is formed on the surface of the substrate. A carbon nanotube film is formed on the adhesive layer. The adhesive layer is solidified. An electrode and a conductive trace are formed on each target area so that part of the carbon nanotube film is exposed from a space between adjacent conductive lines of the conductive trace to form an exposed carbon nanotube film on each trace area. The exposed carbon nanotube film on each trace area is removed to obtain a plurality of transparent conductive layers spaced from each other. A number of touch panels is obtained by cutting the substrate.

    Abstract translation: 本公开涉及一次制作多个触摸面板的方法。 该方法包括以下步骤。 提供基板。 基板具有限定多个目标区域的表面,每个目标区域包括两个区域:触摸视图区域和迹线区域。 在基板的表面上形成粘接层。 在粘合剂层上形成碳纳米管膜。 粘合层固化。 在每个目标区域上形成电极和导电迹线,使得部分碳纳米管膜从导电迹线的相邻导电线之间的空间露出,以在每个迹线区域上形成暴露的碳纳米管膜。 去除每个迹线区域上的暴露的碳纳米管膜以获得彼此间隔开的多个透明导电层。 通过切割基板获得多个触摸面板。

    Method for making liquid crystal display screen
    13.
    发明授权
    Method for making liquid crystal display screen 有权
    制作液晶显示屏的方法

    公开(公告)号:US08199123B2

    公开(公告)日:2012-06-12

    申请号:US12584410

    申请日:2009-09-03

    Abstract: A method for making a liquid crystal display screen is provided. The method includes the following steps. A touch panel and a thin film transistor panel are provided, and the touch panel includes at least one TP carbon nanotube layer. The thin film transistor panel includes a plurality of thin film transistors; each of the thin film transistors comprises a TFT carbon nanotube layer. A first polarizer is applied on a surface of the touch panel. Additionally, a liquid crystal layer is provided to be placed between the first polarizer and the thin film transistor panel.

    Abstract translation: 提供了一种制造液晶显示屏的方法。 该方法包括以下步骤。 提供触摸面板和薄膜晶体管面板,并且触摸面板包括至少一个TP碳纳米管层。 薄膜晶体管面板包括多个薄膜晶体管; 每个薄膜晶体管包括TFT碳纳米管层。 第一偏振器被施加在触摸面板的表面上。 此外,提供液晶层以放置在第一偏振器和薄膜晶体管面板之间。

    Backlight module with reflective diffuser and liquid crystal display with same
    16.
    发明申请
    Backlight module with reflective diffuser and liquid crystal display with same 审中-公开
    带反光扩散器的背光模块和液晶显示屏相同

    公开(公告)号:US20090303415A1

    公开(公告)日:2009-12-10

    申请号:US12455826

    申请日:2009-06-08

    CPC classification number: G02B6/0055 G02B6/0096

    Abstract: An exemplary backlight module includes a first light source, and a diffusing film. The diffusing film includes a light incident surface adjacent to the first light source, a light emitting surface located at an opposite side thereof, and a plurality of first reflective portions provided at the light incident surface. A pitch between every two adjacent first reflective portions progressively increases with increasing distance away from the first light source. A liquid crystal display employing the backlight module is also provided.

    Abstract translation: 示例性背光模块包括第一光源和漫射膜。 漫射膜包括与第一光源相邻的光入射表面,位于其相对侧的发光表面和设置在光入射表面处的多个第一反射部。 每两个相邻的第一反射部分之间的间距随着距离第一光源的距离的增加而逐渐增加。 还提供了采用背光模块的液晶显示器。

    Organic light emitting diode
    17.
    发明申请
    Organic light emitting diode 审中-公开
    有机发光二极管

    公开(公告)号:US20080048561A1

    公开(公告)日:2008-02-28

    申请号:US11974628

    申请日:2007-10-15

    Abstract: An organic light emitting diode is provided. The organic light emitting diode includes a substrate, an anode electrode structure formed on the substrate and including at least a metal layer and a metal oxide layer, an organic layer formed on the anode electrode structure and a cathode electrode structure formed on the organic layer. The metal oxide layer includes an oxide of the metal layer and has a thickness ranged between 1 to 50 nm

    Abstract translation: 提供有机发光二极管。 有机发光二极管包括基板,形成在基板上的至少包括金属层和金属氧化物层的阳极电极结构,形成在阳极电极结构上的有机层和形成在有机层上的阴极电极结构。 金属氧化物层包括金属层的氧化物,其厚度为1〜50nm

    Method of utilizing color photoresist to form black matrix and spacers on a control circuit substrate
    18.
    发明授权
    Method of utilizing color photoresist to form black matrix and spacers on a control circuit substrate 有权
    在控制电路基板上利用彩色光致抗蚀剂形成黑矩阵和间隔物的方法

    公开(公告)号:US06749975B2

    公开(公告)日:2004-06-15

    申请号:US10430750

    申请日:2003-05-06

    CPC classification number: G02F1/13394 G02F1/136209

    Abstract: A method of utilizing color photoresist to form black matrix and spacers on a control circuit substrate is described. Utilizing the character of the red and the blue photoresist having a non-overlapping transmittance region in the visible light region, a black matrixes consisting of overlapping red and blue photoresist on control devices are used to prevent the photo current occurring in the off state of the control devices. In addition, three different color photoresist plus another-color photoresist are overlapped to form spacers on metal lines.

    Abstract translation: 描述了利用彩色光致抗蚀剂在控制电路基板上形成黑矩阵和间隔物的方法。 利用在可见光区域具有不重叠的透射区域的红色和蓝色光致抗蚀剂的特征,使用由控制装置上的重叠的红色和蓝色光致抗蚀剂组成的黑色矩阵,以防止发生在关闭状态的光电流 控制装置。 另外,三种不同颜色的光致抗蚀剂加上另一种彩色光致抗蚀剂被重叠以在金属线上形成间隔物。

    Method for fabricating a crown-type capacitor of a DRAM cell
    20.
    发明授权
    Method for fabricating a crown-type capacitor of a DRAM cell 失效
    制造DRAM单元的冠型电容器的方法

    公开(公告)号:US5989952A

    公开(公告)日:1999-11-23

    申请号:US934617

    申请日:1997-09-22

    CPC classification number: H01L28/92 C12Q1/48 H01L27/10852

    Abstract: A method for fabricating a DRAM cell having a crown-type capacitor over a semiconductor substrate is disclosed. The method includes steps of: (a) forming a transistor over the semiconductor substrate; (b) forming an insulating layer over the transistor; (c) selectively etching the insulating layer to form a contact opening; (d) forming a first conducting layer over the insulating layer and filling into the contact opening; (e) forming an etching stop layer and a mask layer over the first conducting layer; (f) pattering the mask layer to form a plurality of openings; (g) forming a dielectric spacer on the sidewall of the mask layer, and removing exposed portions of the etching stop layer; (h) anisotropically etching the mask layer and the first conducting layer by using the dielectric spacer as a mask, to expose, respectively, the etching stop layer and the insulating layer; (i) removing uncovered etching stop layer to expose the first conducting layer; (j) anisotropically etching the first conducting layer to a predetermined depth by using the dielectric spacer as a mask, thereby forming a crown-type storage electrode; (k) removing the dielectric spacer and the etching stop layer; (l) forming a dielectric layer over exposed portions of the storage electrode; and (m) forming a second conducting layer as an opposite electrode over the dielectric layer.

    Abstract translation: 公开了一种在半导体衬底上制造具有冠型电容器的DRAM单元的方法。 该方法包括以下步骤:(a)在半导体衬底上形成晶体管; (b)在所述晶体管上形成绝缘层; (c)选择性地蚀刻绝缘层以形成接触开口; (d)在所述绝缘层上形成第一导电层并填充到所述接触开口中; (e)在所述第一导电层上形成蚀刻停止层和掩​​模层; (f)图案掩模层以形成多个开口; (g)在掩模层的侧壁上形成电介质间隔物,去除蚀刻停止层的暴露部分; (h)通过使用电介质间隔物作为掩模,各向异性地蚀刻掩模层和第一导电层,分别暴露蚀刻停止层和绝缘层; (i)去除未覆盖的蚀刻停止层以暴露第一导电层; (j)通过使用电介质间隔物作为掩模,将第一导电层各向异性蚀刻到预定深度,由此形成冠型存储电极; (k)去除电介质间隔物和蚀刻停止层; (l)在所述存储电极的暴露部分上形成介电层; 和(m)在所述电介质层上形成作为相对电极的第二导电层。

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