中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

27 records (took 0.016 seconds)

    PHOTONIC INTEGRATED CIRCUIT
    11.
    发明申请
    PHOTONIC INTEGRATED CIRCUIT 有权

    公开(公告)号：US20230123000A1

    公开(公告)日：2023-04-20

    申请号：US18082520

    申请日：2022-12-15

    Applicant: Psiquantum, Corp.

    Inventor： Vimal Kumar Kamineni ,  Matteo Staffaroni ,  Faraz Najafi ,  Ann Melnichuk ,  George Kovall ,  Yong Liang

    IPC: G02B6/136 ,  G02B6/132 ,  G02B6/122

    Abstract: A device includes a substrate, a dielectric layer on the substrate, a waveguide within the dielectric layer, and a photodetector optically coupled to the waveguide. The photodetector is disposed above the waveguide layer and is monolithically integrated with the substrate. The photodetector is configured to operate at low temperatures, such as below about 50 K or about 20 K. In some embodiments, the monolithic photonic device includes thermal isolation structures and optical isolation structures. Techniques for manufacturing the monolithic photonic device, including the thermal isolation structures and optical isolation structures, are also described.

    BARIUM TITANATE FILMS HAVING REDUCED INTERFACIAL STRAIN
    12.
    发明申请
    BARIUM TITANATE FILMS HAVING REDUCED INTERFACIAL STRAIN 有权

    公开(公告)号：US20230018940A1

    公开(公告)日：2023-01-19

    申请号：US17377131

    申请日：2021-07-15

    Applicant: Psiquantum, Corp.

    Inventor： Yong Liang ,  Vimal Kumar Kamineni ,  Chia-Ming Chang ,  James McMahon

    IPC: H01L23/00 ,  H01L27/12 ,  H01L21/02

    Abstract: In some embodiments method comprises depositing a ferroelectric layer on a top surface of a semiconductor wafer and forming one or more gaps in the ferroelectric layer. The one or more gaps can be formed on a repetitive spacing to relieve stresses between the ferroelectric layer and the semiconductor wafer. A first dielectric layer is deposited over the ferroelectric layer and the first dielectric layer is planarized to fill in the gaps. A second dielectric layer is formed between the ferroelectric layer and the semiconductor wafer. The second dielectric layer can be formed by annealing the wafer in an oxidizing atmosphere such that an upper portion of the semiconductor substrate forms an oxide layer between the semiconductor substrate and the ferroelectric layer.

    Epitaxial strontium titanate on silicon
    15.
    发明授权
    Epitaxial strontium titanate on silicon 有权

    公开(公告)号：US11615954B2

    公开(公告)日：2023-03-28

    申请号：US16791914

    申请日：2020-02-14

    Applicant: PsiQuantum Corp.

    Inventor： Yong Liang

    IPC: H01L21/02 ,  H01L21/28

    Abstract: A method for processing a substrate includes positioning a silicon substrate in a deposition chamber. One or more intermediate layers are deposited on a surface of the silicon. The one or more intermediate layers can include strontium, which combines with the silicon to form strontium silicide. Alternatively, the one or more intermediate layers comprise germanium. A layer of amorphous strontium titanate is deposited on the one or more intermediate layers in a transient environment in which oxygen pressure is reduced while temperature is increased. The substrate is then exposed to an oxidizing and annealing atmosphere that oxidizes the one or more intermediate layers and converts the layer of amorphous strontium titanate to crystalline strontium titanate.

    ISOLATION OF WAVEGUIDE-INTEGRATED DETECTORS USING A BACK END OF LINE PROCESS
    16.
    发明申请
    ISOLATION OF WAVEGUIDE-INTEGRATED DETECTORS USING A BACK END OF LINE PROCESS 有权

    公开(公告)号：US20210242651A1

    公开(公告)日：2021-08-05

    申请号：US17239085

    申请日：2021-04-23

    Applicant: Psiquantum, Corp.

    Inventor： Eric Dudley ,  Yong Liang ,  Faraz Najafi ,  Vimal Kamineni ,  Ann Melnichuk

    IPC: H01S3/067 ,  G02B6/122

    Abstract: An optical device includes a substrate, a dielectric layer on the substrate, a waveguide within the dielectric layer, a light sensitive component (e.g., a photodetector) in the dielectric layer and coupled to the waveguide, and a plurality of light isolation structures in at least one of the substrate or the dielectric layer and configured to prevent stray light from reaching the light sensitive component. In some embodiments, a light isolation structure in the plurality of light isolation structures includes two opposing sidewalls and a filling material between the two opposing sidewalls. The two opposing sidewalls include an optical isolation layer. The filling material is characterized by a coefficient of thermal expansion (CTE) matching a CTE of at least one of the substrate or the dielectric layer.

    METHOD AND SYSTEM FOR FORMATION OF STABILIZED TETRAGONAL BARIUM TITANATE
    17.
    发明申请
    METHOD AND SYSTEM FOR FORMATION OF STABILIZED TETRAGONAL BARIUM TITANATE 有权

    公开(公告)号：US20210124233A1

    公开(公告)日：2021-04-29

    申请号：US17083141

    申请日：2020-10-28

    Applicant: PSIQUANTUM, CORP.

    Inventor： Yong Liang ,  Mark G. Thompson ,  Chia-Ming Chang ,  Vimal Kumar Kamineni

    IPC: G02F1/225 ,  G02F1/21 ,  G02F1/035

    Abstract: An electro-optic device includes a substrate and a waveguide on the substrate. The waveguide includes a layer stack including a plurality of electro-optic material layers interleaved with a plurality of interlayers, a waveguide core adjacent to the layer stack, a waveguide cladding layer, and a pair of electrodes in electrical contact with the plurality of electro-optic material layers. The plurality of interlayers maintains a first lattice structure at room temperature and a cryogenic temperature. The plurality of electro-optic material layers maintains a second lattice structure and crystallographic phase at the room temperature and the cryogenic temperature.

    GERMANIUM MEDIATED DE-OXIDATION OF SILICON
    18.
    发明申请
    GERMANIUM MEDIATED DE-OXIDATION OF SILICON 有权

    公开(公告)号：US20210028015A1

    公开(公告)日：2021-01-28

    申请号：US16791948

    申请日：2020-02-14

    Applicant: PsiQuantum Corp.

    Inventor： Yong Liang ,  Vimal Kumar Kamineni

    IPC: H01L21/02 ,  H01L21/28

    Abstract: A method for removing a native oxide film from a semiconductor substrate includes repetitively depositing layers of germanium on the native oxide and heating the substrate causing the layer of germanium to form germanium oxide, desorbing a portion of the native oxide film. The process is repeated until the oxide film is removed. A subsequent layer of strontium titanate can be deposited on the semiconductor substrate, over either residual germanium or a deposited germanium layer. The germanium can be converted to silicon germanium oxide by exposing the strontium titanate to oxygen.

Patent Agency Ranking