公开(公告)号：US20150235948A1

公开(公告)日：2015-08-20

申请号：US14274184

申请日：2014-05-09

Applicant: QUALCOMM Incorporated

Inventor： Stanley Seungchul SONG ,  Zhongze WANG ,  Ohsang KWON ,  Kern RIM ,  John Jianhong ZHU ,  Xiangdong CHEN ,  Foua VANG ,  Raymond George STEPHANY ,  Choh Fei YEAP

IPC: H01L23/528 ,  H01L27/088 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/5283 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/5226 ,  H01L27/088 ,  H01L29/41775 ,  H01L29/42312 ,  H01L2027/11866 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a gate and a first active contact adjacent to the gate. Such a device further includes a first stacked contact electrically coupled to the first active contact, including a first isolation layer on sidewalls electrically isolating the first stacked contact from the gate. The device also includes a first via electrically coupled to the gate and landing on the first stacked contact. The first via electrically couples the first stacked contact and the first active contact to the gate to ground the gate.

Abstract translation: 半导体器件包括栅极和邻近栅极的第一有源触点。 这种器件还包括电耦合到第一有源触点的第一堆叠触点，包括在侧壁上电隔离第一堆叠触头与栅极的第一隔离层。 该装置还包括电连接到门的第一通孔和第一堆叠接触件上的着陆。 第一通孔将第一堆叠触点和第一有源触点电耦合到栅极以将栅极接地。