公开(公告)号：US20150022024A1

公开(公告)日：2015-01-22

申请号：US13944709

申请日：2013-07-17

Applicant: Qualcomm Incorporated

Inventor： Marc Gerald Dicicco ,  Xiangdong Zhang ,  Xinwei Wang

IPC: H03K17/16

CPC classification number: H03K17/16 ,  H03K17/162

Abstract: Exemplary embodiments are related to switch linearizer. A device may include at least one switch. The device may further include a linearizer coupled to the at least one switch and configured to cancel at least a portion of distortion generated by the at least one switch in an off-state.

Abstract translation: 示例性实施例涉及开关线性化器。 设备可以包括至少一个开关。 该装置还可以包括耦合到该至少一个开关的线性化装置，并且被配置为在断开状态下消除由至少一个开关产生的失真的至少一部分。

公开(公告)号：US08897727B2

公开(公告)日：2014-11-25

申请号：US13828714

申请日：2013-03-14

Applicant: QUALCOMM Incorporated

Inventor： Xinwei Wang ,  Yongrong Zuo ,  Xiangdong Zhang ,  Marc Gerald DiCicco

IPC: H04B17/00 ,  H03F3/45 ,  G01R21/14 ,  H03F3/24 ,  H03G1/04 ,  H03G3/30

CPC classification number: H04B17/0062 ,  G01R21/10 ,  G01R21/14 ,  G01R29/0871 ,  H03F3/245 ,  H03F3/45183 ,  H03F3/45188 ,  H03F2200/447 ,  H03F2200/453 ,  H03F2200/456 ,  H03F2200/465 ,  H03F2203/45112 ,  H03F2203/45156 ,  H03F2203/45292 ,  H03F2203/45302 ,  H03F2203/45481 ,  H03G1/04 ,  H03G3/3036 ,  H04B17/21

Abstract: Power detectors with temperature compensation and having improved accuracy over temperature are disclosed. In an aspect of the disclosure, variations of a power detector gain over temperature is reduced by varying both the gate and drain voltages of MOS transistors within a power detector. In an exemplary design, an apparatus includes at least one MOS transistor, which receives an input signal, detects the power of the input signal based on a power detection gain, and provides an output signal indicative of the power of the input signal. The at least one MOS transistor is applied a variable gate bias voltage and a variable drain bias voltage in order to reduce variations of the power detection gain over temperature. At least one additional MOS transistor may receive a second variable gate bias voltage and provide the variable drain bias voltage for the at least one MOS transistor.

Abstract translation: 公开了具有温度补偿并且具有提高的温度精度的功率检测器。 在本公开的一个方面，通过改变功率检测器内的MOS晶体管的栅极和漏极电压来降低功率检测器的增益随温度的变化。 在示例性设计中，一种装置包括至少一个MOS晶体管，其接收输入信号，基于功率检测增益来检测输入信号的功率，并提供表示输入信号功率的输出信号。 至少一个MOS晶体管被施加可变栅极偏置电压和可变漏极偏置电压，以便减小功率检测增益随温度的变化。 至少一个附加MOS晶体管可以接收第二可变栅极偏置电压，并为至少一个MOS晶体管提供可变漏极偏置电压。

公开(公告)号：US20150042412A1

公开(公告)日：2015-02-12

申请号：US13961861

申请日：2013-08-07

Applicant: QUALCOMM Incorporated

Inventor： James Francis Imbornone ,  Yanjie Sun ,  Zhenying Luo ,  Zhenqi Chen ,  Calogero D. Presti ,  Xinwei Wang ,  Dong Zhang

IPC: H03H7/48 ,  H01P5/18

CPC classification number: H03H7/463 ,  H01P5/18 ,  H03H7/48

Abstract: Techniques for efficiently integrating directional coupler circuitry with other circuit elements of an RF front end. In an aspect, one or more inductors of an RF front end filter is incorporated into a first inductor of the directional coupler, and a capacitor is further coupled in parallel with the first inductor. In another aspect, circuitry associated with matching components of the RF front end may further be incorporated into the directional coupler design. Further techniques are provided for coupling directivity tuning elements to a second inductor of the directional coupler to improve the linearity of the coupler over other tuning techniques.

Abstract translation: 用于将定向耦合器电路与RF前端的其它电路元件有效集成的技术。 一方面，RF前端滤波器的一个或多个电感器被并入定向耦合器的第一电感器中，并且电容器进一步与第一电感器并联耦合。 在另一方面，与RF前端的匹配部件相关联的电路还可以并入定向耦合器设计中。 提供了用于将方向性调谐元件耦合到定向耦合器的第二电感器的其它技术，以提高耦合器相对于其它调谐技术的线性度。

公开(公告)号：US20150035550A1

公开(公告)日：2015-02-05

申请号：US13959504

申请日：2013-08-05

Applicant: QUALCOMM INCORPORATED

Inventor： Rajkumar Chinnakonda Kubendran ,  Xinwei Wang ,  Xiandong Zhang

IPC: G01R27/26

CPC classification number: G01R27/2605 ,  G01K7/01 ,  G01K7/34 ,  G01R31/2856

Abstract: Techniques for measuring on-chip component parameters are described herein. In one embodiment, a method for measuring one or more on-chip component parameters comprises measuring a time for an on-chip capacitor to charge to a voltage approximately equal to a reference voltage, and measuring a time for the on-chip capacitor to charge to a voltage approximately equal to a voltage across an on-chip component. The method also comprises determining a parameter of the on-chip component based on the measured time for the on-chip capacitor to charge to the voltage approximately equal to the reference voltage, the measured time for the on-chip capacitor to charge to the voltage approximately equal to the voltage across the on-chip component, and the reference voltage.

Abstract translation: 本文描述了用于测量片上组件参数的技术。 在一个实施例中，用于测量一个或多个片上分量参数的方法包括测量片上电容器的时间以充电至大致等于参考电压的电压，并测量片上电容器充电的时间 达到大致等于片上组件的电压的电压。 该方法还包括基于片上电容器的测量时间来确定片上分量的参数，以将其充电到大约等于参考电压的电压，片上电容器的测量时间被充电到电压 大致等于片上部件上的电压和参考电压。

公开(公告)号：US20140266518A1

公开(公告)日：2014-09-18

申请号：US13826265

申请日：2013-03-14

Applicant: QUALCOMM INCORPORATED

Inventor： Xinwei Wang ,  Xiangdong Zhang ,  Marc Gerald Dicicco

IPC: H03H11/24

CPC classification number: H03H7/25 ,  H01P1/22

Abstract: A step attenuator with constant input capacitance and having good performance is disclosed. In an exemplary design, an apparatus includes a step attenuator having a constant input capacitance for different amounts of attenuation. The step attenuator receives an input signal, provides a variable amount of attenuation for the input signal, and provides an output signal. The step attenuator may include a plurality of attenuator sections coupled in series. Each attenuator section may include a plurality of capacitors and may have the constant input capacitance. At least one of the plurality of attenuator sections may be selected or unselected to obtain a selected amount of attenuation for the step attenuator. An attenuator section may provide a predetermined amount of attenuation or a variable amount of attenuation when selected. The apparatus may further include a power detector that receives and determines the power of the output signal from the step attenuator.

Abstract translation: 公开了具有恒定输入电容并具有良好性能的阶梯衰减器。 在示例性设计中，装置包括具有用于不同衰减量的恒定输入电容的阶梯衰减器。 步进衰减器接收输入信号，为输入信号提供可变量的衰减，并提供输出信号。 阶梯衰减器可以包括串联耦合的多个衰减器部分。 每个衰减器部分可以包括多个电容器并且可以具有恒定的输入电容。 可以选择或取消选择多个衰减器部分中的至少一个以获得用于步进衰减器的选定量的衰减。 衰减器部分可以在选择时提供预定量的衰减或可变量的衰减。 该装置还可以包括功率检测器，其接收并确定来自阶梯衰减器的输出信号的功率。

公开(公告)号：US20130324062A1

公开(公告)日：2013-12-05

申请号：US13828714

申请日：2013-03-14

Applicant: QUALCOMM INCORPORATED

Inventor： Xinwei Wang ,  Yongrong Zuo ,  Xiangdong Zhang ,  Marc Gerald DiCicco

IPC: H04B17/00

CPC classification number: H04B17/0062 ,  G01R21/10 ,  G01R21/14 ,  G01R29/0871 ,  H03F3/245 ,  H03F3/45183 ,  H03F3/45188 ,  H03F2200/447 ,  H03F2200/453 ,  H03F2200/456 ,  H03F2200/465 ,  H03F2203/45112 ,  H03F2203/45156 ,  H03F2203/45292 ,  H03F2203/45302 ,  H03F2203/45481 ,  H03G1/04 ,  H03G3/3036 ,  H04B17/21

Abstract: Power detectors with temperature compensation and having improved accuracy over temperature are disclosed. In an aspect of the disclosure, variations of a power detector gain over temperature is reduced by varying both the gate and drain voltages of MOS transistors within a power detector. In an exemplary design, an apparatus includes at least one MOS transistor, which receives an input signal, detects the power of the input signal based on a power detection gain, and provides an output signal indicative of the power of the input signal. The at least one MOS transistor is applied a variable gate bias voltage and a variable drain bias voltage in order to reduce variations of the power detection gain over temperature. At least one additional MOS transistor may receive a second variable gate bias voltage and provide the variable drain bias voltage for the at least one MOS transistor.

Abstract translation: 公开了具有温度补偿并且具有提高的温度精度的功率检测器。 在本公开的一个方面，通过改变功率检测器内的MOS晶体管的栅极和漏极电压来降低功率检测器的增益随温度的变化。 在示例性设计中，一种装置包括至少一个MOS晶体管，其接收输入信号，基于功率检测增益来检测输入信号的功率，并提供表示输入信号功率的输出信号。 至少一个MOS晶体管被施加可变栅极偏置电压和可变漏极偏置电压，以便减小功率检测增益随温度的变化。 至少一个附加MOS晶体管可以接收第二可变栅极偏置电压，并为至少一个MOS晶体管提供可变漏极偏置电压。