公开(公告)号：US20200251385A1

公开(公告)日：2020-08-06

申请号：US16854957

申请日：2020-04-22

Applicant: Renesas Electronics Corporation

Inventor： Kazuyuki OMORI ,  Seiji MURANAKA ,  Kazuyoshi MAEKAWA

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L21/285 ,  C23C14/34 ,  C23C14/16 ,  C23C14/06

Abstract: Performance of a semiconductor device is improved. In one embodiment, for example, deposition time is increased from 4.6 sec to 6.9 sec. In other words, in one embodiment, thickness of a tantalum nitride film is increased by increasing the deposition time. Specifically, in one embodiment, deposition time is increased such that a tantalum nitride film provided on the bottom of a connection hole to be coupled to a wide interconnection has a thickness within a range from 5 to 10 nm.

公开(公告)号：US20180197753A1

公开(公告)日：2018-07-12

申请号：US15915746

申请日：2018-03-08

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Masahiro MATSUMOTO ,  Kazuyoshi MAEKAWA ,  Yuichi KAWANO

IPC: H01L21/48 ,  H01L23/00 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/4817 ,  H01L21/76852 ,  H01L23/3121 ,  H01L23/525 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L2221/1078 ,  H01L2224/02166 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05007 ,  H01L2224/05008 ,  H01L2224/05075 ,  H01L2224/05548 ,  H01L2224/05664 ,  H01L2224/0612 ,  H01L2224/131 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The present invention makes it possible to improve the reliability of a semiconductor device. The semiconductor device has, over a semiconductor substrate, a pad electrode formed at the uppermost layer of a plurality of wiring layers, a surface protective film having an opening over the pad electrode, a redistribution line being formed over the surface protective film and having an upper surface and a side surface, a sidewall barrier film comprising an insulating film covering the side surface and exposing the upper surface of the redistribution line, and a cap metallic film covering the upper surface of the redistribution line. Then the upper surface and side surface of the redistribution line are covered with the cap metallic film or the sidewall barrier film and the cap metallic film and the sidewall barrier film have an overlapping section.