公开(公告)号：US20220214619A1

公开(公告)日：2022-07-07

申请号：US17564462

申请日：2021-12-29

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC ,  DUPONT ELECTRONICS, INC.

Inventor： Joshua Kaitz ,  Brian Malbrecht ,  Deyan Wang ,  Michael Henry Howard, JR.

IPC: G03F7/11 ,  G03F7/32 ,  G03F7/40 ,  G03F7/20 ,  G03F7/004

Abstract: A topcoat composition, comprising a polymer comprising a repeating unit derived from one or more monomers of formula (1); and a solvent, wherein Z1, Z2, R1, R2, and L are as described herein, and P is a polymerizable group.

公开(公告)号：US20220197143A1

公开(公告)日：2022-06-23

申请号：US17127434

申请日：2020-12-18

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

Inventor： Joshua Kaitz ,  Ke Yang ,  Keren Zhang ,  Li Cui ,  James F. Cameron ,  Dan B. Millward ,  Shintaro Yamada

IPC: G03F7/11 ,  C09D171/00 ,  C08G65/40

Abstract: A photoresist underlayer composition comprising a poly(arylene ether); an additive of formula (14): D-(L1-Ar—[X]n)m  (14); and a solvent, wherein, in formula (14), D is a substituted or unsubstituted C1-60 organic group, optionally wherein D is an organic acid salt of the substituted or unsubstituted C1-60 organic group; each L1 is independently a single bond or a divalent linking group, when L1 is a single bond, D may be a substituted or unsubstituted C3-30 cycloalkyl or substituted or unsubstituted C1-20 heterocycloalkyl that is optionally fused with Ar, each Ar is independently a monocyclic or polycyclic C5-60 aromatic group, each X is independently —OR30, —SR31, or —NR32R33, m is an integer of 1 to 6, each n is independently an integer of 0 to 5, provided that a sum of all n is 2 or greater, and R30 to R33 are as provided herein.

公开(公告)号：US20220197142A1

公开(公告)日：2022-06-23

申请号：US17124751

申请日：2020-12-17

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

Inventor： Joshua Kaitz ,  Michael Finch ,  Paul J. LaBeaume ,  Shintaro Yamada ,  Suzanne M. Coley

IPC: G03F7/11 ,  C08G65/40 ,  C09D171/12 ,  C08G73/06 ,  C09D179/04 ,  C08F220/18 ,  C09D133/10 ,  C23C16/02 ,  C23C16/20 ,  C23C16/455 ,  G03F7/16 ,  G03F7/42 ,  H01L21/027

Abstract: A method of forming a pattern on a substrate, the method including: forming a photoresist underlayer over a surface of the substrate, wherein the photoresist underlayer is formed from a composition comprising a polymer and a solvent, and the photoresist underlayer has a carbon content of greater than 47 at %; subjecting the photoresist underlayer to a a metal precursor, where the metal precursor infiltrates a free volume of the photoresist underlayer; and exposing the metal precursor-treated photoresist underlayer to an oxidizing agent to provide a metallized photoresist underlayer.

公开(公告)号：US20220137509A1

公开(公告)日：2022-05-05

申请号：US17506082

申请日：2021-10-20

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Xisen Hou ,  Mingqi Li ,  Joshua Kaitz ,  Tomas Marangoni ,  Peter Trefonas, III

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/38 ,  G03F7/40 ,  G03F7/20

Abstract: Photoresist compositions comprise: an acid-sensitive polymer comprising a first repeating unit formed from a first free radical polymerizable monomer comprising an acid-decomposable group and a second repeating unit formed from a second free radical polymerizable monomer comprising a carboxylic acid group; a compound comprising two or more enol ether groups, wherein the compound is different from the acid-sensitive polymer; a material comprising a base-labile group; a photoacid generator; and a solvent. The photoresist compositions and pattern formation methods using the photoresist compositions find particular use in the formation of fine lithographic patterns in the semiconductor manufacturing industry.

公开(公告)号：US20200348592A1

公开(公告)日：2020-11-05

申请号：US16530273

申请日：2019-08-02

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

Inventor： Joshua Kaitz ,  Ke Yang ,  Keren Zhang ,  James F. Cameron ,  Li Cui ,  Emad Aqad ,  Shintaro Yamada ,  Paul J. LaBeaume

IPC: G03F7/075 ,  G03F7/09 ,  C08L25/18

Abstract: A resist underlayer composition including a polyarylene ether, an additive polymer that is different from the polyarylene ether, and a solvent, wherein the additive polymer includes an aromatic or heteroaromatic group having at least one protected or free functional group selected from hydroxy, thiol, and amino.