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    Gap-filling method
    3.
    发明授权
    Gap-filling method 有权

    公开(公告)号：US11042093B2

    公开(公告)日：2021-06-22

    申请号：US16167568

    申请日：2018-10-23

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： James F. Cameron ,  Keren Zhang ,  Li Cui ,  Daniel Greene ,  Shintaro Yamada

    IPC: G03F7/20 ,  C08G61/10 ,  G03F7/09

    Abstract: A method of manufacturing a semiconductor device comprising: providing a semiconductor device substrate having a relief image on a surface of the substrate, the relief image having a plurality of gaps to be filled; applying a coating composition to the relief image to provide a coating layer, wherein the coating composition comprises (i) a polyarylene oligomer comprising as polymerized units one or more first monomers having two or more cyclopentadienone moieties and one or more second monomers having an aromatic moiety and two or more alkynyl moieties; wherein the polyarylene oligomer has a Mw of 1000 to 6000 Da, a PDI of 1 to 2, and a molar ratio of total first monomers to total second monomers of 1:>1; and (ii) one or more organic solvents; curing the coating layer to form a polyarylene film; patterning the polyarylene film; and transferring the pattern to the semiconductor device substrate.

    MULTIPLE-PATTERN FORMING METHODS
    9.
    发明申请
    MULTIPLE-PATTERN FORMING METHODS 有权
    多模式形成方法

    公开(公告)号：US20160062232A1

    公开(公告)日：2016-03-03

    申请号：US14836050

    申请日：2015-08-26

    Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials Korea Ltd.

    Inventor： Chang-Young Hong ,  Cheng-Bai Xu ,  Jung Woo Kim ,  Cong Liu ,  Shintaro Yamada ,  Lori Anne Joesten ,  Choong-Bong Lee ,  Phillip D. Hustad ,  James C. Taylor

    IPC: G03F7/00 ,  G03F7/40 ,  G03F7/32 ,  H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/40 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/325 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/0337

    Abstract: Multiple-pattern forming methods are provided. The methods comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition comprising: a matrix polymer comprising an acid labile group; a photoacid generator; and a solvent; (c) patternwise exposing the photoresist layer to activating radiation; (d) baking the exposed photoresist layer; (e) contacting the baked photoresist layer with a first developer to form a first resist pattern; (f) treating the first resist pattern with a coating composition comprising an expedient for switching solubility of a sidewall region of the first resist pattern from soluble to insoluble with respect to a second developer that is different from the first developer; and (g) contacting the treated first resist pattern with the second developer to remove portions of the first resist pattern, leaving the solubility-switched sidewall region to form a multiple-pattern. The methods have particular applicability to the semiconductor manufacturing industry for the formation of fine lithographic patterns.

    Abstract translation: 提供了多模式形成方法。 所述方法包括：（a）提供包括一个或多个待图案化层的半导体衬底; （b）在待图案化的一层或多层上形成光致抗蚀剂层，其中光致抗蚀剂层由包含酸性不稳定基团的基质聚合物组成的组合物形成; 光致酸发生器; 和溶剂; （c）将光致抗蚀剂层图案化地曝光成激活辐射; （d）烘烤曝光的光致抗蚀剂层; （e）使烘烤的光致抗蚀剂层与第一显影剂接触以形成第一抗蚀剂图案; （f）用涂料组合物处理所述第一抗蚀剂图案，所述涂料组合物包括相对于不同于所述第一显影剂的第二显影剂将所述第一抗蚀剂图案的侧壁区域的可溶解度从可溶性切换到不溶性的方法; 和（g）使经处理的第一抗蚀剂图案与第二显影剂接触以除去第一抗蚀剂图案的部分，留下溶解度转换侧壁区域以形成多重图案。 该方法对于形成精细光刻图案的半导体制造业具有特别的适用性。

    Coating composition for photoresist underlayer
    10.
    发明授权
    Coating composition for photoresist underlayer 有权

    公开(公告)号：US11762294B2

    公开(公告)日：2023-09-19

    申请号：US17007877

    申请日：2020-08-31

    Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

    Inventor： Joshua Kaitz ,  Sheng Liu ,  Li Cui ,  Shintaro Yamada ,  Suzanne M. Coley ,  Iou-Sheng Ke

    IPC: G03F7/11 ,  G03F7/09

    CPC classification number: G03F7/11 ,  G03F7/091 ,  G03F7/094

    Abstract: A photoresist underlayer composition, comprising a polymer comprising a repeating unit of formula (1):




    wherein Ar is a monocyclic or polycyclic C5-60 aromatic group, wherein the aromatic group comprises one or more aromatic ring heteroatoms, a substituent group comprising a heteroatom, or a combination thereof; R1 is hydrogen, substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C1-30 heteroalkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C2-30 heterocycloalkyl, substituted or unsubstituted C2-30 alkenyl, substituted or unsubstituted C2-30 alkynyl, substituted or unsubstituted C6-30 aryl, substituted or unsubstituted C7-30 arylalkyl, substituted or unsubstituted C7-30 alkylaryl, substituted or unsubstituted C3-30 heteroaryl, or substituted or unsubstituted C4-30 heteroarylalkyl; and R2 is substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C1-30 heteroalkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C2-30 heterocycloalkyl, substituted or unsubstituted C2-30 alkenyl, substituted or unsubstituted C2-30 alkynyl, substituted or unsubstituted C6-30 aryl, substituted or unsubstituted C7-30 arylalkyl, substituted or unsubstituted C7-30 alkylaryl, substituted or unsubstituted C3-30 heteroaryl, or substituted or unsubstituted C4-30 heteroarylalkyl, wherein R1 and R2 can be optionally taken together to form a ring.

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