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    Fractional-readout oversampled image sensor
    11.
    发明授权
    Fractional-readout oversampled image sensor 有权
    分数读出过采样图像传感器

    公开(公告)号：US09521351B1

    公开(公告)日：2016-12-13

    申请号：US14995138

    申请日：2016-01-13

    Applicant: Rambus Inc.

    Inventor： Jay Endsley ,  Thomas Vogelsang ,  Craig M. Smith ,  Michael Guidash ,  Alexander C. Schneider

    IPC: H04N5/378 ,  H04N5/355 ,  H04N5/235 ,  H04N5/353

    CPC classification number: H04N5/378 ,  H04N5/2355 ,  H04N5/3532 ,  H04N5/35536

    Abstract: Signals representative of total photocharge integrated within respective image-sensor pixels are read out of the pixels after a first exposure interval that constitutes a first fraction of a frame interval. Signals in excess of a threshold level are read out of the pixels after an ensuing second exposure interval that constitutes a second fraction of the frame interval, leaving residual photocharge within the pixels. After a third exposure interval that constitutes a third fraction of the frame interval, signals representative of a combination of at least the residual photocharge and photocharge integrated within the pixels during the third exposure interval are read out of the pixels.

    Abstract translation: 在构成帧间隔的第一分数的第一曝光间隔之后，从像素中读出代表在相应图像传感器像素内的总光电荷的代表信号。 在构成帧间隔的第二部分的随后的第二曝光间隔之后，从像素中读出超过阈值电平的信号，在像素内留下残余光电荷。 在构成帧间隔的第三分数的第三曝光间隔之后，从像素中读出表示在第三曝光间隔期间集成在像素内的至少残留光电荷和光电荷的组合的信号。

    HIGH DYNAMIC-RANGE IMAGE SENSOR
    13.
    发明申请
    HIGH DYNAMIC-RANGE IMAGE SENSOR 审中-公开
    高动态范围图像传感器

    公开(公告)号：US20160323524A1

    公开(公告)日：2016-11-03

    申请号：US15100976

    申请日：2014-12-03

    Applicant: RAMBUS INC.

    Inventor： Craig M. Smith ,  Frank Armstrong ,  Jay Endsley ,  Thomas Vogelsang ,  James E. Harris ,  John Ladd ,  Michael Guidash

    IPC: H04N5/355 ,  H04N5/232 ,  H04N5/3745 ,  H04N5/347 ,  H04N5/361 ,  H04N9/04 ,  H04N5/235

    CPC classification number: H04N5/355 ,  H04N5/23245 ,  H04N5/2355 ,  H04N5/347 ,  H04N5/35536 ,  H04N5/361 ,  H04N5/37457 ,  H04N9/045

    Abstract: A pixel array within an integrated-circuit image sensor is exposed to light representative of a scene during a first frame interval and then oversampled a first number of times within the first frame interval to generate a corresponding first number of frames of image data from which a first output image may be constructed. One or more of the first number of frames of image data are evaluated to determine whether a range of luminances in the scene warrants adjustment of an oversampling factor from the first number to a second number, if so, the oversampling factor is adjusted such that the pixel array is oversampled the second number of times within a second frame interval to generate a corresponding second number of frames of image data from which a second output image may be constructed.

    Abstract translation: 集成电路图像传感器内的像素阵列在第一帧间隔期间暴露于表示场景的光，然后在第一帧间隔内对第一次数进行过采样，以生成对应的第一数量的图像数据帧， 可以构造第一输出图像。 对图像数据的第一数量帧中的一个或多个进行评估，以确定场景中的亮度范围是否需要将过采样因子从第一数量调整到第二数量，如果是，则调整过采样因子，使得 像素阵列在第二帧间隔内对第二次数进行过采样，以生成可以从其构造第二输出图像的图像数据的对应的第二数量帧。

    Conditional-reset image sensor with analog counter array
    14.
    发明授权
    Conditional-reset image sensor with analog counter array 有权
    具有模拟计数器阵列的条件复位图像传感器

    公开(公告)号：US09380245B1

    公开(公告)日：2016-06-28

    申请号：US14173077

    申请日：2014-02-05

    Applicant: Rambus Inc.

    Inventor： Michael Guidash ,  Thomas Vogelsang

    IPC: H04N5/378 ,  H04N9/04

    CPC classification number: H04N5/378 ,  H04N5/355 ,  H04N5/3696 ,  H04N9/045

    Abstract: In an image sensor containing an array of pixels, a pixel signal corresponding to the state of a photosensitive element is read-out of each pixel and compared with a threshold. If the pixel signal exceeds the first threshold, the state of the photosensitive element is reset and an analog-count voltage that corresponds to the pixel is incremented.

    Abstract translation: 在包含像素阵列的图像传感器中，读出与每个像素相对应的感光元件的状态的像素信号并将其与阈值进行比较。 如果像素信号超过第一阈值，则光敏元件的状态被复位，并且对应于像素的模拟计数电压增加。

    Solid State Image Sensor with Low Capacitance Floating Diffusion
    15.
    发明申请
    Solid State Image Sensor with Low Capacitance Floating Diffusion 审中-公开
    具有低电容浮动扩散的固态图像传感器

    公开(公告)号：US20160172397A1

    公开(公告)日：2016-06-16

    申请号：US14970497

    申请日：2015-12-15

    Applicant: DARTMOUTH COLLEGE ,  Rambus Inc.

    Inventor： Jiaju Ma ,  Eric R. Fossum ,  Michael Guidash

    IPC: H01L27/146

    CPC classification number: H01L27/14614 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14643

    Abstract: Some embodiments provide an image sensor having a low capacitance floating diffusion node based on by reducing the width of the overlap between the floating diffusion region and the reset gate of the reset transistor that is configured to selectively reset the potential of the floating diffusion, so as to reduce the overlap capacitance therebetween. The reset gate may be tapered along its length so as to have a minimum width proximal to the FD and a maximum width distal to the floating diffusion, such as near or at a drain region of the reset transistor. The floating diffusion may be defined to have a width less than the minimum floating diffusion width that could be achieved by the minimum definable width of a photoresist window opening used for doping the FD region for the given fabrication process. Shallow trench isolation and/or compensation doping may be used for such definition of the floating diffusion.

    Abstract translation: 一些实施例提供了一种具有低电容浮动扩散节点的图像传感器，其基于通过减小浮置扩散区域和复位晶体管的复位栅极之间的重叠宽度而被配置为选择性地复位浮动扩散的电位，从而 以减小它们之间的重叠电容。 复位栅极可以沿着其长度逐渐变细，以具有靠近FD的最小宽度和远离浮动扩散部的最大宽度，例如复位晶体管的接近或在漏极区域。 浮动扩散可以被限定为具有小于最小浮动扩散宽度的宽度，该最小浮动扩散宽度可以通过用于给定制造工艺掺杂FD区域的光致抗蚀剂窗口的最小可定义宽度来实现。 浅沟槽隔离和/或补偿掺杂可用于浮动扩散的这种定义。

    Oversampled image sensor with conditional pixel readout
    16.
    发明授权
    Oversampled image sensor with conditional pixel readout 有权
    具有条件像素读数的过采样图像传感器

    公开(公告)号：US09001251B2

    公开(公告)日：2015-04-07

    申请号：US14482065

    申请日：2014-09-10

    Applicant: Rambus Inc.

    Inventor： Craig M. Smith ,  Michael Guidash ,  Jay Endsley ,  Thomas Vogelsang ,  James E. Harris

    IPC: H04N3/14 ,  H04N5/335 ,  H04N5/378 ,  H01L31/062 ,  H01L31/113

    CPC classification number: H04N5/3559 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H04N5/347 ,  H04N5/355 ,  H04N5/3741 ,  H04N5/37455 ,  H04N5/378

    Abstract: In a pixel array within an integrated-circuit image sensor, each of a plurality of pixels is evaluated to determine whether charge integrated within the pixel in response to incident light exceeds a first threshold. N-bit digital samples corresponding to the charge integrated within at least a subset of the plurality of pixels are generated, and then applied to a lookup table to retrieve respective M-bit digital values (M being less than N), wherein a stepwise range of charge integration levels represented by possible states of the M-bit digital values extends upward from a starting charge integration level that is determined based on the first threshold.

    Abstract translation: 在集成电路图像传感器内的像素阵列中，评估多个像素中的每一个以确定响应于入射光在像素内积分的电荷是否超过第一阈值。 产生与集成在多个像素的至少一个子集中的电荷相对应的N位数字样本，然后将其应用于查找表以检索相应的M位数字值（M小于N），其中步长范围 由M位数字值的可能状态表示的电荷积分电平从基于第一阈值确定的起始电荷积分电平向上延伸。

    FRACTIONAL-READOUT OVERSAMPLED IMAGE SENSOR
    17.
    发明申请
    FRACTIONAL-READOUT OVERSAMPLED IMAGE SENSOR 审中-公开

    公开(公告)号：US20200351463A1

    公开(公告)日：2020-11-05

    申请号：US16859243

    申请日：2020-04-27

    Applicant: Rambus Inc.

    Inventor： Jay Endsley ,  Thomas Vogelsang ,  Craig M. Smith ,  Michael Guidash ,  Alexander C. Schneider

    IPC: H04N5/378 ,  H04N5/235 ,  H04N5/353 ,  H04N5/355

    Abstract: Signals representative of total photocharge integrated within respective image-sensor pixels are read out of the pixels after a first exposure interval that constitutes a first fraction of a frame interval. Signals in excess of a threshold level are read out of the pixels after an ensuing second exposure interval that constitutes a second fraction of the frame interval, leaving residual photocharge within the pixels. After a third exposure interval that constitutes a third fraction of the frame interval, signals representative of a combination of at least the residual photocharge and photocharge integrated within the pixels during the third exposure interval are read out of the pixels.

    Image sensor with depletion-level pixel charge transfer control
    18.
    发明授权
    Image sensor with depletion-level pixel charge transfer control 有权

    公开(公告)号：US10567683B2

    公开(公告)日：2020-02-18

    申请号：US15313029

    申请日：2015-06-03

    Applicant: Rambus Inc.

    Inventor： Michael Guidash ,  John Ladd

    IPC: H04N5/357 ,  H01L27/146 ,  H04N5/363 ,  H04N5/378

    Abstract: A pixel circuit within an integrated-circuit image sensor includes a photodiode having a pinning layer of a first conductivity type, a floating diffusion node and a transfer gate disposed between the photodiode and the floating diffusion node. A first control input is coupled to the transfer gate, and a second control input is coupled to the pinning layer of the photodiode to enable the depletion potential of the photodiode to be raised and lowered.

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