公开(公告)号：US09906165B2

公开(公告)日：2018-02-27

申请号：US15194624

申请日：2016-06-28

Applicant: Renesas Electronics Corporation

Inventor： Kuniharu Muto ,  Koji Bando ,  Takamitsu Kanazawa ,  Ryo Kanda ,  Akihiro Tamura ,  Hirobumi Minegishi

IPC: H01L23/495 ,  H01L23/04 ,  H01L27/06 ,  H02M7/00 ,  H02M7/537 ,  H02M7/5387

CPC classification number: H02M7/537 ,  H01L23/04 ,  H01L23/3107 ,  H01L23/49541 ,  H01L27/0664 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/181 ,  H02M7/003 ,  H02M7/53875 ,  H01L2924/00012 ,  H01L2924/00

Abstract: Reliability of a semiconductor device is improved. A third semiconductor chip on which a control circuit is formed, and a first semiconductor chip of a plurality of IGBT chips are electrically connected via a high-side relay board. That is, the first semiconductor chip and the third semiconductor chip are electrically connected via a first wire, a high-side relay board and a second wire. Similarly, the third semiconductor chip on which the control circuit is formed and a second semiconductor chip of a plurality of IGBT chips are electrically connected via a low-side relay board. That is, the second semiconductor chip and the third semiconductor chip are electrically connected via the first wire, the low-side relay board and the second wire.

公开(公告)号：US20160064312A1

公开(公告)日：2016-03-03

申请号：US14827973

申请日：2015-08-17

Applicant: Renesas Electronics Corporation

Inventor： Koji Bando

IPC: H01L23/495 ,  H01L21/52 ,  H01L25/07

CPC classification number: H01L23/49575 ,  H01L21/50 ,  H01L21/52 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/84 ,  H01L25/072 ,  H01L29/0619 ,  H01L29/7397 ,  H01L29/8611 ,  H01L2021/60277 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H02M7/00 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

Abstract: Provided is a method for manufacturing a semiconductor device that can achieve downsizing of the semiconductor device. Convex portions are pressed against side surfaces other than one side surface of one chip mounting portion, thereby fixing the chip mounting portion without forming a convex portion corresponding to the one side surface of the chip mounting portion. Likewise, convex portions are pressed against side surfaces other than one side surface of the other chip mounting portion, thereby fixing the other chip mounting portion without forming a convex portion corresponding to the one side surface of the other chip mounting portion.

Abstract translation: 提供一种可以实现半导体器件的小型化的半导体器件的制造方法。 凸部被压靠在一个芯片安装部的一个侧面以外的侧面，从而固定芯片安装部，而不形成与芯片安装部的一个侧面对应的凸部。 同样地，凸部按压在另一个芯片安装部分的一个侧表面以外的侧表面上，从而固定另一个芯片安装部分，而不形成与另一个芯片安装部分的一个侧表面相对应的凸起部分。